Diffusion barrier and method of formation thereof

1. A method of forming a device comprising:

providing a structure having first and second regions, wherein providing the structure comprises forming a gate electrode layer on a substrate;

forming a diffusion barrier between at least a portion of the first and second regions, wherein the diffusion barrier comprises cavities which reduce diffusion of elements between the first and second regions, and the diffusion barrier is formed in the gate electrode layer.

2. The method of claim 1 wherein forming the diffusion barrier comprises:

providing a mask on top of the structure, the mask shields at least the portion of the first and second regions;

implanting dopants in regions not covered by the mask to form an implant region; and

annealing the implant region to form the cavities.

3. The method of claim 2 wherein providing the mask comprises forming the mask directly on the structure.

4. A method of forming a device comprising:

providing a structure having first and second regions, wherein the structure comprises a gate electrode layer on a substrate; and

forming a diffusion barrier in the gate electrode layer between at least first and second regions of the gate electrode layer, wherein the diffusion barrier comprises cavities which reduce diffusion of elements between the first and second regions.

5. The method of claim 4 wherein forming the diffusion barrier comprises:

providing a mask on top of the structure, the mask shields at least the portion of the first and second regions;

implanting dopants in regions not covered by the mask to form an implant region; and

annealing the implant region to form the cavities.

6. The method of claim 5 wherein providing the mask comprises forming the mask directly on the structure.

7. The method of claim 4 wherein the first and second regions of the gate electrode layer is disposed along a length of the gate electrode layer.