On chip transformer isolator
View Patent ↗An integrated circuit having voltage isolation capabilities includes a first area of the integrated circuit containing functional circuitry that is located in the substrate of the integrated circuit. A second area of the integrated circuit contains an integrated RF isolation circuitry for voltage isolating the functional circuitry. The RF isolation circuitry is located in the metal layers of the integrated circuit.
1. An integrated circuit having voltage isolation capabilities, comprising:
a first group of functional circuitry located in a first area of the integrated circuit, the first group of functional circuitry located in a substrate of the integrated circuit;
a second group of functional circuitry located in a second area of the integrated circuit, the second group of functional circuitry located in the substrate of the integrated circuit; and
integrated RF voltage isolation circuitry located in a third area of the integrated circuit for voltage isolating the first group of functional circuitry from the second group of functional circuitry, the RF isolation circuitry located in metal layers of the integrated circuit, wherein the RF voltage isolation circuitry comprises:
a first coil located on a first metal layer, the first coil connected to the functional circuitry; and
a second coil located on a second metal layer above the first metal layer and substantially non-overlapping the first coil, the second coil electromagnetically coupled to the first coil.
2. The integrated circuit of claim 1 , wherein the integrated RF voltage isolation circuitry provides voltage isolation up to 5,000 volts.
3. An integrated circuit having voltage isolation capabilities, comprising:
functional circuitry located in a first area of the integrated circuit, the functional circuitry located in a substrate of the integrated circuit; and
integrated RF voltage isolation circuitry located in a third area of the integrated circuit for voltage isolating the functional circuitry, the RF voltage isolation circuitry located in metal layers of the integrated circuit wherein the RF voltage isolation circuitry further comprises:
a first coil located on a first metal layer, the first coil connected to the functional circuitry; and
a second coil located on a second metal layer above the first metal layer and substantially non-overlapping the first coil, the second coil electromagnetically coupled to the first coil.
4. The integrated circuit of claim 3 , wherein the integrated RF voltage isolation circuitry provides voltage isolation up to 5,000 volts.
5. An integrated circuit having voltage isolation capabilities, comprising:
functional circuitry located in a first area of the integrated circuit, the functional circuitry located in a substrate of the integrated circuit; and
at least one RF voltage isolation interface for voltage isolating the functional circuitry, the at least one RF voltage isolation interface located in metal layers of the integrated circuit above the substrate, the at least one RF voltage isolation interface comprising:
a first coil located on a first metal layer, the first coil connected to the functional circuitry;
a second coil located on a second metal layer above the first metal layer and substantially non-overlapping the first coil, the second coil electromagnetically coupled to the first coil;
first and second terminals located on a third metal layer below the first metal layer for interconnecting the first coil with the functional circuitry;
a first pad connected to a first end of the second coil and located within the second coil; and
a second pad connected to a second end of the second coil and located substantially near an edge of the second coil.
6. The integrated circuit of claim 5 , wherein the integrated RF voltage isolation interface provides voltage isolation up to 5,000 volts.