Semiconductor device having metal cap divided by slit
View Patent ↗In order to reduce a thermal stress applied by a metal cap to a semiconductor chip: a semiconductor chip ( 2 ) is bonded to a flat portion ( 11 ) of a metal cap ( 1 ); side wall portions of the metal cap ( 1 ) serve as external connection terminals ( 13 ); and a slit ( 7 ) is formed in the metal cap ( 1 ) so as to cross the semiconductor chip ( 2 ), so a bonding region between the semiconductor chip ( 2 ) and the metal cap ( 1 ) is divided into small bonding regions to reduce thermal stresses applied to the respective bonding regions. Therefore, peeling can be prevented in respective bonding regions, whereby a small-size semiconductor device in which the semiconductor chip is bonded to the metal cap with improved bonding reliability is obtained.
1. A semiconductor device, comprising:
a semiconductor chip including a principal surface and a back surface opposite to the principal surface, the principal surface having a surface electrode; and
a metal cap including a flat portion and sidewall portions, the flat portion being bonded with the back surface of the semiconductor chip, the side wall portions being formed on at least two opposed sides of the flat portion and made of the same material as a material of the flat portion,
wherein the flat portion includes a slit passing entirely through a thickness of the flat portion from a surface to which the semiconductor chip is bonded by a bonding material to a surface opposite thereto, the slit is formed across the semiconductor chip in a plan view and divides a bonding region between the flat portion and the semiconductor chip into a plurality of bonding regions, each of the plurality of bonding regions is a region where the flat portion is faced with the back surface of the semiconductor chip via the bonding material, and the plurality of bonding regions are separated individually to each other by the slit, and
wherein the slit has a width which is equal to or larger than 1/10 of a thickness of the flat portion and equal to or smaller than ⅓ of a side length of the semiconductor chip.
2. A semiconductor device according to claim 1 , wherein the slit has a cross shape.
3. A semiconductor device according to claim 2 , wherein each of the plurality of bonding regions has a rectangular shape.
4. A semiconductor device according to claim 2 , wherein each of the plurality of bonding regions has a triangular shape.
5. A semiconductor device according to claim 1 , wherein the bonding material is further bonded to an inner portion of the slit.
6. A semiconductor device according to claim 1 , wherein the bonding material is a solder material.