SEMICONDUCTOR WITH TOP-SIDE WRAP-AROUND FLANGE CONTACT
A method and apparatus are described for an electronic component package. A standoff is formed on an active side of a substrate. The substrate has an electronic circuit. A conductive layer is deposited over at least a portion of the active side of the substrate. The conductive layer electrically couples a contact area on the active side of the substrate. The standoff is removed to create a flexible conductor.
1 . A method of making an electronic component package, the method comprising:
forming a standoff on an active side of a substrate, the substrate having an electronic circuit;
depositing a conductive layer over at least a portion of the standoff and a portion of the active side of the substrate, the conductive layer electrically coupling a contact area on the active side of the substrate; and
removing the standoff to create a flexible conductor.
2 . The method of claim 1 , further comprising:
depositing an insulating layer on the active side of the substrate prior to forming the standoff, wherein the contact area remains exposed.
3 . The method of claim 1 , wherein the standoff is formed by depositing standoff material through a stencil.
4 . The method of claim 1 , wherein forming the standoff comprises:
depositing an encapsulant on the active side of the substrate; and
photoforming or etching a portion of the encapsulant to expose the contact area.
5 . The method of claim 1 , wherein forming the standoff comprises:
attaching a prefabricated standoff.
6 . The method of claim 1 , wherein the standoff comprises a polymer.
7 . The method of claim 1 , wherein the standoff is between 25 and 200 microns in height.
8 . The method of claim 1 , wherein the conductive layer comprises one or more of the following: gold, silver, nickel, titanium, tungsten, aluminum, copper, platinum.
9 . The method of claim 1 , wherein the conductive layer comprises a top layer to accept solder and a bottom layer to reject solder.
10 . The method of claim 1 , further comprising:
encapsulating the electronic component package and a second component within a single assembly;
electrically coupling the conductive layer of the electronic component package with a contact on the second component by plating the encapsulated assembly using build-up processing.
11 . The method of claim 1 , wherein a barrier metal layer is deposited, prior to the conductive layer, on at least a portion of the area to be covered by the conductive layer.
12 . The method of claim 1 , wherein the standoff is removed by an etching process.
13 . The method of claim 1 , further comprising:
depositing a second insulation layer on the active side of the substrate after removing the standoff, wherein a portion of the flexible conductor remains exposed.
14 . The method of claim 13 , wherein the second insulation layer is deposited using a masking process.
15 . The method of claim 13 , wherein the second insulation layer is deposited uniformly over the entire electronic component package and removed from an upper portion of the flexible conductor.
16 . The method of claim 1 , further comprising:
depositing an encapsulant on a non-active side of the substrate.
17 . The method of claim 1 , further comprising:
coupling the flexible conductor with a printed circuit board using one or more of the following: solder, ultrasonic bonding, conductive epoxy, or plated conductors.
18 . An electronic component package comprising:
a flexible flange contact on an active side of a substrate, the substrate having an electronic circuit, wherein a gap of air defines the space between a portion of the contact and a portion of the active side of the substrate.
19 . The electronic component package of claim 18 , further comprising:
an insulating layer on the active side of the substrate between the active side of the substrate and the gap of air and between the active side of the substrate and a portion of the contact, wherein the contact is electrically coupled with the active side of the substrate through the insulating layer.
20 . The electronic component package of claim 18 , wherein the gap of air between the portion of the contact and the portion of the active side of the substrate is between 25 and 200 microns in height.
21 . The electronic component package of claim 18 , wherein the contact comprises one or more of the following: gold, silver, nickel, titanium, tungsten, aluminum, copper, platinum.
22 . The electronic component package of claim 18 , wherein
the electronic component package and a second component is encapsulated within a single assembly, and
the conductive layer of the electronic component package is electrically coupled with a contact on the second component by plating the encapsulated assembly using build-up processing.
23 . The electronic component package of claim 18 , wherein the contact comprises a top layer to accept solder and a bottom layer to reject solder.
24 . The electronic component package of claim 18 , further comprising:
a barrier metal layer on the substrate side of the contact.
25 . The electronic component package of claim 18 , further comprising:
a second insulation layer on the active side of the substrate covering a portion of the contact, wherein the gap of air defines the space between a portion of the contact and a portion of the second insulation layer.
26 . The electronic component package of claim 25 , wherein the gap of air between a portion of the contact and a portion of the second insulation layer is between 10 and 100 microns in height.
27 . The electronic component package of claim 18 , further comprising:
an encapsulant on a non-active side of the substrate.