Method for fabricating a light emitting diode chip including etching by a laser beam
A method for fabricating substrate-free LED chips has a multilayer semiconductor structure at least 10 microns thick provided on a growth substrate. One or more arrays of parallel streets are etched into the multilayer semiconductor structure using a first pulsed laser beam. By scanning a second pulsed laser beam through the growth substrate to the multilayer semiconductor structure, the LED chips are detached from the growth substrate while simultaneously forming surface features on the chips.
1. A method for fabricating a light emitting diode chip comprising the steps of:
depositing a multilayer semiconductor structure on a transparent growth substrate, wherein said growth substrate has a first surface and a second surface opposite said first surface, wherein said multilayer semiconductor structure has a first surface in contact with said second surface of said growth substrate and a second surface opposite said first surface, wherein said multilayer semiconductor structure is at least 10 microns thick and wherein said multilayer semiconductor structure includes a first doped layer proximal to said growth substrate, an active region, and a second doped layer distal from said growth substrate, wherein said active region is interposed between said first doped layer and said second doped layer;
etching a first array of parallel streets substantially through said multilayer semiconductor structure by scanning a first laser beam directed to said second surface of said multilayer semiconductor structure; and
detaching said multilayer semiconductor structure from said growth substrate wherein said first surface of said multilayer semiconductor structure is exposed.
2. The method for fabricating a light emitting diode chip of claim 1 , further comprising the step of:
after etching said first array of parallel streets but before detaching said multilayer semiconductor structure from said growth substrate;
etching a second array of parallel streets substantially through said multilayer semiconductor structure at an angle to said first array of parallel streets by scanning said first laser beam directed to said second surface of said multilayer semiconductor structure.
3. The method for fabricating a light emitting diode chip of claim 1 , wherein said detaching said multilayer semiconductor structure from said growth substrate comprises the steps of:
scanning a second laser beam directed at said first surface of said growth substrate in at least a first direction, wherein said second laser beam passes through said first surface of said growth substrate and through the interior of said growth substrate to said first surface of said multilayer semiconductor structure, wherein said second laser beam decomposes said first surface of said multilayer semiconductor structure, resulting in the formation of an interfacial layer of non-uniform thickness between said first surface of said multilayer semiconductor structure and said second surface of said growth substrate and the simultaneous formation of surface features on said first surface of said multilayer semiconductor structure; and
removing said multilayer semiconductor structure from said growth substrate by severing said interfacial layer.
4. The method for fabricating a light emitting diode chip of claim 1 , wherein said light emitting diode chip is substrate-free.
5. The method of fabricating a light emitting diode chip of claim 3 wherein said simultaneous formation of surface features on said first surface of said multilayer semiconductor structure forms light extraction elements for said light emitting diode chip.
6. The method of fabricating a light emitting diode chip of claim 3 , wherein said first laser beam and said second laser beam are pulsed.
7. The method of fabricating a light emitting diode chip of claim 4 , wherein said first laser beam and said second laser beam are produced by a frequency-quadrupled, diode-pumped, solid-state laser.
8. The method of fabricating a light emitting diode chip of claim 1 wherein said multilayer semiconductor structure is deposited on said growth substrate by metal-organic chemical vapor deposition.
9. The method of fabricating a light emitting diode chip of claim 1 wherein said multilayer semiconductor structure is deposited on said growth substrate by hydride vapor phase epitaxy.
10. The method of fabricating a light emitting diode chip of claim 2 , wherein said step of etching said first array of parallel streets has said first laser beam elongated in a direction parallel to said first array of parallel streets and said step of etching said second array of parallel streets has said first laser beam elongated in a direction parallel to said second array of parallel streets.
11. The method of fabricating a light emitting diode chip of claim 3 , wherein said second laser beam is elongated in a direction perpendicular to said first direction.
12. The method of fabricating a light emitting diode chip of claim 1 , wherein said multilayer semiconductor structure is a gallium nitride based structure.
13. The method of fabricating a light emitting diode chip of claim 1 , wherein said growth substrate is sapphire.
14. The method of fabricating a light emitting diode chip of claim 1 , wherein said multilayer semiconductor structure has a first array of first upper electrodes in electrical contact with said second doped layer.
15. The method of fabricating a light emitting diode chip of claim 14 , further comprising the step of:
fabricating a lower electrode on said first surface of said multilayer semiconductor structure of said light emitting diode chip subsequent to said detaching said multilayer semiconductor structure from said growth substrate.
16. The method of fabricating a light emitting diode chip of claim 14 , wherein said multilayer semiconductor structure has a second array of second upper electrodes, wherein said second array of said second upper electrodes is formed on said multilayer semiconductor structure where portions of said second doped layer and said active region have been removed and wherein said second array of said second upper electrodes is in electrical contact with said upper surface of said first doped layer.
17. The method of fabricating a light emitting diode chip of claim 1 further comprising the step of:
depositing a light reflecting layer on said first surface of said multilayer semiconductor structure of said light emitting diode chip subsequent to said detaching said multilayer semiconductor structure from said growth substrate.
18. The method of fabricating a light emitting diode chip of claim 2 , wherein said angle ranges from about 50 degrees to about 130 degrees.
19. The method of fabricating a light emitting diode chip of claim 1 , wherein said multilayer semiconductor structure is at least 20 microns thick.
20. The method of fabricating a light emitting diode chip of claim 1 , wherein said multilayer semiconductor structure is at least 30 microns thick.
21. The method of fabricating a light emitting diode chip of claim 1 , wherein said light emitting diode chip is a plurality of said light emitting diode chips.
22. A method for fabricating a light emitting diode chip comprising the steps of:
depositing a multilayer semiconductor structure on a transparent growth substrate, wherein said growth substrate has a first surface and a second surface opposite said first surface, wherein said multilayer semiconductor structure has a first surface in contact with said second surface of said growth substrate and a second surface opposite said first surface, wherein said multilayer semiconductor structure is at least 10 microns thick and wherein said multilayer semiconductor structure includes a first doped layer proximal to said growth substrate, an active region, and a second doped layer distal from said growth substrate, wherein said active region is interposed between said first doped layer and said second doped layer;
etching a first array of parallel streets substantially through said multilayer semiconductor structure by scanning a first laser beam directed to said second surface of said multilayer semiconductor structure;
etching a second array of parallel streets substantially through said multilayer semiconductor structure at an angle to said first array of parallel streets by scanning said first laser beam directed to said second surface of said multilayer semiconductor structure;
scanning a second laser beam directed at said first surface of said growth substrate in at least a first direction, wherein said second laser beam passes through said first surface of said growth substrate and through the interior of said growth substrate to said first surface of said multilayer semiconductor structure, wherein said second laser beam decomposes said first surface of said multilayer semiconductor structure, resulting in the formation of an interfacial layer of non-uniform thickness between said first surface of said multilayer semiconductor structure and said second surface of said growth substrate and the simultaneous formation of surface features on said first surface of said multilayer semiconductor structure; and
removing said multilayer semiconductor structure from said growth substrate by severing said interfacial layer wherein said first surface of said multilayer semiconductor structure is exposed.
23. The method of fabricating a light emitting diode chip of claim 22 wherein said simultaneous formation of surface features on said first surface of said multilayer semiconductor structure forms light extraction elements for said light emitting diode chip.
24. The method of fabricating a light emitting diode chip of claim 22 wherein said multilayer semiconductor structure is deposited on said growth substrate by metal-organic chemical vapor deposition.
25. The method of fabricating a light emitting diode chip of claim 22 wherein said multilayer semiconductor structure is deposited on said growth substrate by hydride vapor phase epitaxy.