Electron gun, electron beam exposure apparatus, and exposure method
View Patent ↗An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB 6 ) or cerium hexaboride (CeB 6 ). The electron emission restrictive region may be covered with carbon.
1. An electron gun comprising:
an electron source for emitting electrons, the electron source having an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons, wherein
the electron emission restrictive region is a side surface of the electron source except a tip of the electron source for the electron emission, and is covered with a different material from the electron source, and
thermal field-emitted electrons are emitted through application of an electric field to the tip with a sufficiently low temperature being maintained to avoid sublimation of a material of the electron source.
2. The electron gun according to claim 1 , wherein the material of the electron source is any one of lanthanum hexaboride (LaB 6 ) and cerium hexaboride (CeB 6 ).
3. The electron gun according to claim 1 ,
wherein the electron emission restrictive region is covered with carbon.
4. The electron gun according to claim 1 ,
wherein the temperature is set in a range from 1100° C. to 1300° C.
5. The electron gun according to claim 1 ,
wherein the tip comprises a planarized part having a diameter in a range from 1 μm to 200 μm.
6. The electron gun according to claim 1 ,
wherein the tip of the electron source is formed into a substantially cone shape, and has a cone angle equal to or below 50 degrees.
7. The electron gun according to claim 1 ,
wherein the electron emission restrictive region is defined as a region including the side surface and a rear surface of the electron source except the electron emission surface and a part sandwiched by a carbon chip used for heating by energization.
8. An electron beam exposure apparatus comprising:
the electron gun configured by elements according to claim 1 .
9. An electron gun comprising:
an electron source configured to emit electrons;
an extraction electrode located at a given distance away from an electron emission surface of the electron source and configured to extract the electrons;
a suppressor electrode located above the extraction electrode and the electron emission surface and configured to suppress emission of the electrons from a side surface of the electron source; and
an acceleration electrode located below the extraction electrode and configured to accelerate the electrons,
wherein the side surface of the electron source except the electron emission surface on a tip of the electron source is covered with a different material from the electron source, and
thermal field-emitted electrons are emitted through application of an electric field to the tip with a sufficiently low temperature being maintained to avoid sublimation of a material of the electron source.
10. The electron gun according to claim 9 ,
wherein the material of the electron source is any one of lanthanum hexaboride (LaB 6 ) and cerium hexaboride (CeB 6 ).
11. The electron gun according to claim 9 ,
wherein the different material is carbon.
12. The electron gun according to claim 9 ,
wherein the temperature is set in a range from 1100° C. to 1300° C.
13. The electron gun according to claim 9 ,
wherein the extraction electrode is located at a distance equal to or below 2 mm away from the electron emission surface.
14. The electron gun according to claim 9 ,
wherein an electrostatic lens electrode is located between the extraction electrode and the acceleration electrode.
15. An electron beam exposure apparatus comprising:
the electron gun configured by elements according to claim 9 .
16. An exposure method applying an electron gun provided with an electron source configured to emit electrons, an extraction electrode located at a given distance away from an electron emission surface of the electron source and configured to extract the electrons, a suppressor electrode located above the extraction electrode and the electron emission surface and configured to suppress emission of the electrons from a side surface of the electron source, and an acceleration electrode located below the extraction electrode and configured to accelerate the electrons, the electron gun being configured to emit thermal field-emitted electrons by applying an electric field to a tip of the electron source while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source, and then to render a sample exposed to the thermal field-emitted electrons, the method comprising the steps of:
applying a voltage for a given time period so as to render electric potential at the extraction electrode lower than electric potential at the tip of the electron source; and
performing exposure by applying the voltage so as to render the electric potential at the extraction electrode higher than electric potential at the tip of the electron source.