Semiconductor element and method of manufacturing the same
A semiconductor element ( 1 ) includes a semiconductor substrate ( 11 ) and a conductive post portion ( 121 ) protruding from the semiconductor substrate ( 11 ). The conductive post portion ( 121 ) is provided to the semiconductor substrate ( 11 ) and is free from a recessed portion recessed in a direction intersecting with a protruding direction of the conductive post portion ( 121 ) on an outer surface extending from a distal end to a proximal end on a semiconductor substrate ( 11 ) side.
1 . A semiconductor element, comprising:
a semiconductor substrate; and
a conductive post portion protruding from the semiconductor substrate,
wherein the conductive post portion has a distal end surface curved in a substantially arc shape, and is free from a recessed portion recessed in a direction intersecting with a protruding direction of the conductive post portion on an outer surface extending from a distal end to a proximal end on a semiconductor substrate side.
2 . The semiconductor element according to claim 1 , wherein the conductive post portion is free from an eaves portion projecting in a direction substantially parallel to a substrate surface of the semiconductor substrate.
3 . The semiconductor element according to claim 1 , wherein:
the semiconductor substrate is provided with a conductive through-hole portion that passes through the semiconductor substrate; and
a width dimension of the proximal end of the conductive post portion in a direction along a substrate surface of the semiconductor substrate is equal to or larger than a width dimension of the conductive through-hole portion.
4 . The semiconductor element according to claim 1 , wherein:
the conductive post portion is provided thereon with a solder layer covering the distal end surface; and
the solder layer is thickest at a top of the distal end surface.
5 . The semiconductor element according to claim 4 , wherein the solder layer is formed along the distal end surface of the conductive post portion and has a surface curved in a substantially arc shape.
6 . The semiconductor element according to claim 4 , wherein the solder layer is gradually increased in thickness from a periphery of the distal end surface of the conductive post portion toward the top thereof.
7 . The semiconductor element according to claim 1 , wherein:
a surface of the semiconductor substrate is provided with a seed layer; and
the conductive post portion is provided on the seed layer.
8 . A semiconductor element, comprising:
a semiconductor substrate; and
a conductive post portion protruding from the semiconductor substrate, wherein:
the conductive post portion has a distal end surface and is provided to the semiconductor substrate so that the distal end surface is curved in a substantially arc shape;
the conductive post portion is provided thereon with a solder layer covering the distal end surface; and
the solder layer at a top of the distal end surface is thicker than the solder layer at other portion.
9 . The semiconductor element according to claim 8 , wherein the solder layer is formed along the distal end surface of the conductive post portion and has a surface curved in a substantially arc shape.
10 . The semiconductor element according to claim 8 , wherein the solder layer is gradually increased in thickness from a periphery of the distal end surface of the conductive post portion toward the top thereof.
11 . The semiconductor element according to claim 8 , wherein:
a surface of the semiconductor substrate is provided with a seed layer; and
the conductive post portion is provided on the seed layer.
12 . A method of manufacturing a semiconductor element including: a semiconductor substrate; a conductive post portion provided on the semiconductor substrate to protrude therefrom; and a solder layer provided on the conductive post portion, the method comprising the steps of:
forming on the semiconductor substrate the conductive post portion having a distal end surface curved in a substantially arc shape by electrolytic plating;
forming the solder layer on the distal end surface of the conductive post portion; and
reflowing the solder layer to form the solder layer which has the thickest portion at a top of the distal end surface of the conductive post portion.
13 . The method of manufacturing a semiconductor element according to claim 12 , wherein the step of forming on the semiconductor substrate the conductive post portion having a distal end surface curved in a substantially arc shape by electrolytic plating employs a plating solution containing a polyethylene glycol as an additive.