Method of producing a semiconductor device

1. A method of producing a semiconductor device, comprising:

providing a reaction chamber with a substrate; and

sequentially repeating a substrate processing cycle to process the substrate disposed in the reaction chamber, the cycle comprising:

supplying a first kind of gas, into the reaction chamber;

exhausting the first kind of gas from the reaction chamber;

supplying a second kind of gas into the reaction chamber; and

exhausting the second kind of gas from the reaction chamber,

wherein the first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and the first kind of gas reserved in the intermediate portion of the supply path is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.

2. The method of producing a semiconductor device as recited in claim 1 , wherein the second kind of gas is activated by plasma-excitation.

3. The method of producing a semiconductor device as recited in claim 1 , wherein the second kind of gas is NH 3 .

4. The method of producing a semiconductor device as recited in claim 2 , wherein

the second kind of gas is supplied into the reaction chamber while the reaction chamber is exhausted.

5. The method of producing a semiconductor device as recited in claim 4 , wherein

in supplying the second kind of gas, a pressure of the reaction chamber is kept in a predetermined pressure range.

6. The method of producing a semiconductor device as recited in claim 5 , wherein

in supplying the second kind of gas; the pressure of the reaction chamber is set from approximately 10 Pa to approximately 100 Pa.

7. The method of producing a semiconductor device as recited in claim 6 , wherein

in supplying the second kind of gas, the pressure of the reaction chamber is set from approximately 30 Pa to approximately 60 Pa.

8. The method of producing a semiconductor device as recited in claim 1 , wherein

the first kind of gas is not activated by plasma-excitation.

9. The method of producing a semiconductor device as recited in claim 8 , wherein

in supplying the, second kind of gas, the pressure of the reaction chamber is set from approximately 266 Pa to approximately 931 Pa.

10. The method of producing a semiconductor device as recited in claim 1 , wherein

the first kind of gas is dichlorsilane.

11. The method of producing a semiconductor device as recited in claim 1 , wherein

the first kind of gas is pre-reserved in a gas reservoir disposed at the intermediate portion of the supply path.

12. The method of producing a semiconductor device as recited in claim 11 , wherein

the second kind of gas is supplied into the reaction chamber while the first gas is reserved in the gas reservoir.

13. The method of producing a semiconductor device as recited in claim 11 , wherein

the first kind of gas is reserved in the gas reservoir until a pressure in the gas reservoir reaches approximately 20,000 Pa.

14. The method of producing a semiconductor device as recited in claim 11 , wherein

a capacity of the gas reservoir is approximately 1/1,000 to approximately 3/1,000 of a capacity of the reaction chamber,

15. A method of producing a semiconductor device, comprising:

providing a reaction chamber with a substrate; and

sequentially repeating a substrate processing cycle to process the substrate disposed in the reaction chamber, the cycle comprising:

supplying a first kind of gas into the reaction chamber;

exhausting the first kind of gas from the reaction chamber;

supplying a second kind of gas into the reaction chamber; and

exhausting the second kind of gas from the reaction chamber,

wherein the first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and the first kind of gas reserved in the intermediate portion of the supply path is supplied into the reaction chamber, without being activated by plasma excitation, while exhaust of the reaction chamber is substantially stopped, and

the second kind of gas is supplied into the reaction chamber, with the second kind of gas being activated by plasma-excitation, while the reaction chamber is exhausted.

16. The method of producing a semiconductor device as recited in claim 15 , wherein the second kind of gas is NH 3 .

17. The method of producing a semiconductor device as recited in claim 15 , wherein

the first kind of gas is dichlorsilane.

18. The method of producing a semiconductor device as recited in claim 16 , wherein

the first kind of gas is dichlorsilane, and the substrate disposed in the reaction chamber is processed while the substrate is heated at a temperature ranging from approximately 350° C. to approximately 600° C.

19. The method of producing a semiconductor device as recited in claim 17 , wherein

the first kind of gas is pre-reserved in a gas reservoir disposed at the intermediate portion of the supply path.

20. A method of producing a semiconductor device, comprising:

providing a reaction chamber with a substrate; and

sequentially repeating a substrate processing cycle to process the substrate disposed in the reaction chamber, the cycle comprising:

supplying a first kind of gas into the reaction chamber;

exhausting the first kind of gas from the reaction chamber;

supplying a second kind of gas into the reaction chamber; and

exhausting the second kind of gas from the reaction chamber,

wherein the first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first gas flows, and the first gas reserved in the intermediate portion of the supply path is supplied into the reaction chamber while exhaust of the reaction chamber is substantially stopped to raise a pressure of the reaction chamber to 166 Pa or more.