IP Library Granted Patent US 7,898,011
Granted Patent B2
US 7,898,011 · App. 12/160,366 · Granted Mar 1, 2011

Image sensor having anti-reflection film for reducing crosstalk

Assignee: Siliconfile Technologies Inc.
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Quick Facts
Patent No.
US 7,898,011
App. No.
12/160,366
Granted
Mar 1, 2011
Kind
B2
Abstract

An image sensor for reducing crosstalk includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

Claims (8)

1. An image sensor comprising:

a plurality of photodiodes formed in a semiconductor substrate;

an interlayer insulating layer formed on the semiconductor substrate to cover the semiconductor substrate;

at least two metal wiring layers formed in the interlayer insulating layer, the at least two metal wiring layers including a plurality of metal wire lines, and

at least two anti-reflection films disposed between the at least two metal wiring layers and the semiconductor substrate, wherein the at least two anti-reflection films are respectively disposed between a lowest metal wiring layer of the at least two metal wiring layers and the semiconductor substrate, and between the lowest metal wiring layer and another metal wiring layer formed right above the lowest metal wiring layer; wherein each of the at least two anti-reflection films is configured to be separate from the metal wiring layer.

2. The image sensor according to claim 1 , wherein a size of the anti-reflection films is smaller than a size of the metal wire lines to allow reflecting light to be incident onto the photodiodes.

3. The image sensor according to claim 1 , wherein each of the anti-reflection films is configured to be separate from the semiconductor substrate.

4. The image sensor according to claim 2 , wherein the size of each of the anti-reflection films is a width of each of the anti-reflection films, and the size of the metal wire lines is a width of each of the metal wire lines.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 20, 2017
From: SILICONFILE TECHNOLOGIES INC.
To: SK HYNIX INC.
Reel/Frame 041023/0058 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 9, 2008
From: WON, JUN HO; OH, SE JUNG; RIM, JAE YOUNG; LEE, BYOUNG SU
To: SILICONFILE TECHNOLOGIES INC.
Reel/Frame 021214/0213 →
Priority Claims (1)
KR 10-2006-0007579 · Jan 25, 2006 · national
Continuity (1)
Related Publication 20090008737A1 · Jan 8, 2009