IP Library Granted Patent US 7,952,071
Granted Patent B2
US 7,952,071 · App. 12/162,071 · Granted May 31, 2011

Apparatus and method for inspecting sample surface

Assignees: Ebara Corporation; Kabushiki Kaisha Toshiba
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Quick Facts
Patent No.
US 7,952,071
App. No.
12/162,071
Granted
May 31, 2011
Kind
B2
Abstract

Provided is a defect inspection apparatus and an inspection (or evaluation) method with highly improved accuracy, which would not be provided by the prior art, in the defect inspection apparatus used in a manufacturing process of a semiconductor device. Provided is a method for inspecting a sample surface with a projection type electron beam inspection apparatus, comprising the steps of: forming such an irradiation area on the sample surface by an electron beam generated from an electron gun 21 that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface; irradiating the electron beam substantially onto a center of the pattern on the sample surface; and forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.

Claims (11)

1. A method for inspecting a sample surface with a projection type electron beam inspection apparatus, the method characterized in comprising the steps of:

forming such an irradiation area on the sample surface by an electron beam generated from an electron gun that has approximately a circular or elliptical shape of a size larger than a pattern on the sample surface;

irradiating the electron beam substantially onto a center of the pattern on the sample surface; and

forming an image on an electron detection plane of a detector from secondary electrons emanating from the sample surface in response to the irradiation of the electron beam for inspecting the sample surface.

2. A method for inspecting a sample surface in accordance with claim 1 , characterized in that the detector is an EB-CCD.

3. A method for inspecting a sample surface in accordance with claim 1 or 2 , characterized in that the irradiation of the electron beam onto the sample surface is carried out by deflecting the electron beam by controlling of a voltage of a blanking electrode disposed in the middle of a path of the electron beam,

wherein the method comprises:

calculating an amount of charges, i.e., dose amount, irradiated on the sample surface, by using a blanking signal obtained by the controlling of the voltage of the blanking electrode;

calculating a variation in potential of the sample surface from a predetermined physical constant depending on the dose amount and the structure of the sample; and

adjusting a retarding voltage (RTD) to cancel out the variation in potential.

4. A method for inspecting a sample surface in accordance with claim 3 , characterized in that an irradiation point of the electron beam is shifted from the center of the pattern on the sample surface to a direction substantially opposite to the deflecting direction of the electron beam so as to eliminate a bias in a charged condition of the sample surface.

Assignments (5)
CHANGE OF NAME Recorded Dec 23, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058573/0535 →
MERGER Recorded Dec 23, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 058573/0542 →
CHANGE OF NAME Recorded Dec 23, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058573/0657 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043546/0955 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 4, 2008
From: NOJI, NOBUHARU; NAITO, YOSHIHIKO; SOBUKAWA, HIROSI; HATAKEYAMA, MASAHIRO; TERAO, KENJI; MURAKAMI, TAKESHI; OKUMURA, KATSUYA; HIGASHIKI, TATSUHIKO
To: EBARA CORPORATION; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 021336/0179 →
Priority Claims (1)
JP 2006-016553 · Jan 25, 2006 · national
Continuity (1)
Related Publication 20090026368A1 · Jan 29, 2009