Method for stacking devices

1. A method for fabricating a semiconductor device, comprising:

providing a first device including a first through-silicon via (TSV) structure;

forming a first coating material over the first device, wherein the first coating material continuously extends over the first device and covers the first TSV structure;

providing a second device over the first device and within the first coating material, wherein the second device includes a second TSV structure and a plurality of conductive bumps, wherein providing the second device includes positioning the plurality of conductive bumps within the first coating material;

forming a second coating material over the second device, wherein the second coating material continuously extends over the second device and covers the second TSV structure;

providing a third device over the second coating material, wherein the third device includes a third TSV structure;

pre-treating the first and second coating materials; and

thereafter, curing the first and second coating materials in a same process.

2. The method of claim 1 ,

wherein the first, second, and third devices each include a circuit;

wherein the first and second coating materials both include a flux component; and

wherein the circuits of the first, second, and third devices are electrically coupled in response to the curing, using the TSV structures.

3. The method of claim 1 , wherein the first, second, and third devices are each dies.

4. The method of claim 3 , including:

providing a fourth device over a third coating material formed over the third device, wherein the fourth device includes a fourth TSV structure; and

wherein the curing includes curing the third coating material in the same process as the first and second coating materials.

5. The method of claim 1 , wherein a temperature of the pre-treating is from about 80° C. to about 150° C.

6. The method of claim 1 , wherein the pre-treating includes heating the first and second coating materials to a temperature that is less than a curing temperature of the first and second coating materials.

7. The method of claim 1 , further comprising:

post-treating the first and second coating materials after the curing.

8. The method of claim 7 , wherein a temperature of the post-treating is from about 100° C. to about 200° C.

9. The method of claim 1 , wherein the curing includes a thermal process having a temperature from about 200° C. to about 300° C.

10. A method for fabricating a stacked semiconductor device, the method comprising:

providing a first device having a first circuit and a first through-silicon via (TSV) structure;

forming a first coating material over the first device, the first coating material continuously extending over the first device and covering the first TSV structure;

stacking a second device on the first coating material, the second device having a second circuit and a second TSV structure and a first plurality of conductive bumps, wherein stacking the second device forces the first plurality of conductive bumps into the first coating material;

forming a second coating material over the second device, the second coating material continuously extending over the second device and covering the second TSV structure;

stacking a third device on the second coating material, the third device having a third circuit and a second plurality of conductive bumps, wherein stacking the third device forces the second plurality of conductive bumps into the second coating material;

pre-treating the first and second coating materials; and

thereafter, performing a thermal process that electrically couples the first, second, and third circuits to form a circuit of the stacked semiconductor device, and that cures the first and second coating materials.

11. The method of claim 10 , wherein a temperature of the pre-treating is from about 80° C. to about 150° C.

12. The method of claim 10 , further comprising:

post-treating the first and second coating materials after the thermal process, wherein a temperature of the post-treating is from about 100° C. to about 200° C.

13. The method of claim 10 , wherein a temperature of the thermal process is from about 200° C. to about 300° C.

14. The method of claim 10 , wherein the first and second coating materials include a B-stage polymer.