In one embodiment, a hybrid DRAM is provided that includes: a sense amplifier including a differential amplifier and regenerative latch, wherein the differential amplifier and regenerative latch are constructed using core transistors that have a relatively thin gate oxide; and a plurality of memory cells coupled to the sense amplifier through a pair of bit lines, wherein each memory cell includes an access transistor coupled to a storage cell, the access transistor having a relatively thick gate oxide, whereby the storage capacitor is capable of being charged to a VIO power supply voltage that is greater than a VDD power supply voltage for the core transistors.
1. A hybrid DRAM, comprising:
a sense amplifier including a differential amplifier and regenerative latch, wherein the differential amplifier and regenerative latch are constructed using core transistors that have a relatively thin gate oxide; and
a plurality of memory cells coupled to the sense amplifier through a pair of bit lines, wherein each memory cell includes an access transistor coupled to a storage capacitor, the access transistor having a relatively thick gate oxide, whereby the storage capacitor is capable of being charged to a VIO power supply voltage that is greater than a VDD power supply voltage for the core transistors.