IP Library › Granted Patent US 7,830,016
Granted Patent B2
US 7,830,016 · App. 12/165,176 · Granted Nov 9, 2010

Seed layer for reduced resistance tungsten film

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Quick Facts
Patent No.
US 7,830,016
App. No.
12/165,176
Granted
Nov 9, 2010
Kind
B2
Abstract

Briefly, a memory device comprising a beta phase tungsten seed layer is disclosed.

Claims (18)

1. An apparatus, comprising:

a substrate;

an oxide formed on the substrate;

a seed layer of substantially pure tungsten (W) deposited directly on the oxide by physical vapor deposition (PVD), the PVD W comprising a greater percentage of W in a beta phase than W in an alpha phase; and

a layer of tungsten deposited on the PVD W seed layer by chemical vapor deposition (CVD), the CVD W forming grains of various sizes.

2. The apparatus of claim 1 , further comprising a trench feature disposed in the oxide, the PVD W seed layer and CVD W layer being disposed within the trench and the sidewalls of the trench being about 20 nanometers in thickness.

3. The apparatus of claim 1 , wherein the grains of the CVD W layer are about 0.05 micrometers to about 5 micrometers in diameter.

4. The apparatus of claim 1 , wherein the PVD W seed layer combines with oxygen to form a tungsten oxide (WOx) layer.

5. The apparatus of claim 1 , wherein the PVD W seed layer comprises a thickness in a range of about 25 Å and about 250 Å.

6. The apparatus of claim 1 , wherein the PVD W seed layer comprises a thickness in a range of about 25 Å and about 150 Å.

7. The apparatus of claim 1 , wherein the CVD W layer comprises a thickness in a range of about 0 Å and 2000 Å.

8. The apparatus of claim 1 , wherein the grains of the CVD W layer are about 0.3 micrometers to about 3 micrometers in diameter.

9. The apparatus of claim 1 , further comprising a low-resistance film stack of a non-volatile memory device.

10. The apparatus of claim 2 , wherein the grains of the CVD W layer are about 0.05 micrometers to about 5 micrometers in diameter.

11. The apparatus of claim 10 , wherein the PVD W seed layer combines with oxygen to form a tungsten oxide (WOx) layer.

12. The apparatus of claim 11 , wherein the PVD W seed layer comprises a thickness in a range of about 25 Å and about 250 Å.

13. The apparatus of claim 12 , wherein the CVD W layer comprises a thickness in a range of about 0 Å and 200 Å.

14. The apparatus of claim 13 , further comprising a low-resistance film stack of a non-volatile memory device.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2023
From: INTEL CORPORATION
To: INTEL NDTM US LLC
Reel/Frame 064928/0832 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2008
From: MELDIM, MARK; MCTEER, ALLEN; BLOSSE, ALAIN P
To: INTEL CORPORATION
Reel/Frame 021568/0426 →