Organometallic compounds and their use as precursors for forming films and powders of metal or metal derivatives
Disclosed are organometallic compounds derived from Groups VIIb, VIII, IX, and X metals useful as precursors for the formation of metal containing powders and for the chemical deposition of the metals on substrates, particularly for the chemical vapor deposition of metal films suitable for the manufacture of electronic devices. Methods for their use are also disclosed. The preferred organometallic compounds of the present invention are of the formula (R 1 ) m M(PR 2 3 ) x , where M is a metal selected from the group consisting of manganese, technetium, rhenium, iron, cobalt, nickel, ruthenium, rhodium, palladium, osmium iridium and platinum wherein m is 0, 1, 2, 3 or 4; x is 2, 3, 4 or 5 and m+x are 2, 3, 4, 5, 6, 7 or 8, m and x selected according to each metals appropriate valence; each R 1 is independently selected from the group consisting of hydrogen, deuterium, N 2 , H 2 , D 2 and a variety of substituted alkyl groups; each R 2 is independently selected from the group consisting of lower alkyl, aryl, arylalkyl, and alkyl-Z, aryl-Z and arylalkyl-Z where Z is selected from the group consisting of oxy, silyl, siloxy, oxysilyl, siloxy, oxysiloxy, silyalkyl, oxysilylalkyl, siloxyalkyl, oxysiloxyalkyl, silylalkoxy, silylalkoxy, siloxyalkoxy and oxysiloxyalkoxy; and wherein when M is cobalt and one group R 1 is selected to be N 2 , then m is 2 and the second group R 1 is hydrogen or deuterium.
1 - 73 . (canceled)
74 . An integrated circuit device having a film obtainable by chemical vapor deposition of an organometallic compound of the formula (R 1 ) m M(PR 2 3 ) x , where M is a metal selected from the group consisting of manganese, technetium, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, and platinum wherein (a) when M is manganese, technetium or rhenium, m is 1, x is 5 and m+x is 6; (b) when M is iron, ruthenium or osmium, m is 0, 1, 2, 3 or 4; x is 2, 3, 4 or 5 and m+x is 4, 5, 6 or 7; (c) when M is cobalt, rhodium or iridium, m is 1, 2, 3 or 4 and x is 2, 3 or 4 and m+x is 4, 5, 6, 7 or 8; and (d) when M is nickel, palladium or platinum, m is 0 or 2, x is 2, 3, or 4 and m+x is 2, 3, 4, 5 or 6; each R 1 is independently selected from the group consisting of hydrogen, deuterium, N 2 , H 2 , D 2 and a group of the formula —CR 3 2 —CR 2 —R 4 ; each R 2 is independently selected from the group consisting of lower alkyl, aryl, arylalkyl, alkoxy, aryloxy, arylalkoxy, alkylsilyl, arylsilyl, arylalkylsilyl, alkoxysilyl, aryloxysilyl, arylalkoxysilyl, alkylsiloxy, arylsiloxy, arylalkylsiloxy, alkoxysiloxy, aryloxysiloxy, arylalkoxysiloxy, alkylsilylalkyl, arylsilylalkyl, arylalkysilylalkyl, alkoxysilylalkyl, aryloxysilylalkyl, arylalkoxysilylalkyl, alkylsiloxyalkyl, arylsiloxyalkyl, arylalkylsiloxyalkyl, alkoxysiloxyalkyl, aryloxysiloxyalkyl, arylalkoxysiloxyalkyl, alkylsilylalkoxy, arylsilylalkoxy, arylalkylsilylalkoxy, alkoxysilylalkoxy, aryloxysilylalkoxy arylalkyloxysilylalkoxy, alkylsiloxyalkoxy, arylsiloxyalkoxy, arylalkylsiloxyalkoxy, alkoxysiloxyalkoxy, aryloxysiloxyalkoxy, and arylalkoxysiloxyalkoxy; each R 3 is independently selected from the group consisting of hydrogen, deuterium, C 1 -C 6 alkyl, C 1 -C 6 cycloalkyl, phenyl, benzyl, (C 1 -C 2 alkyl or alkoxy) 3 -silyl, and (C 1 -C 2 alkyl or alkoxy) 3 -siloxy and wherein at least two groups R 3 are selected from the group consisting of hydrogen and deuterium; R 4 is hydrogen or deuterium; and wherein when M is cobalt and one group R 1 is selected to be N 2 , then m is 2 and the second group R 1 is hydrogen or deuterium.
75 . The integrated circuit device of claim 74 wherein M is cobalt.
76 . (canceled)
77 . (canceled)
78 . The integrated circuit device of claim 74 wherein M is manganese.
79 . The integrated circuit device of claim 74 wherein M is technetium.
80 . The integrated circuit device of claim 74 wherein M is rhenium.
81 . The integrated circuit device of claim 74 wherein M is iron.
82 . The integrated circuit device of claim 74 wherein M is ruthenium.
83 . The integrated circuit device of claim 74 wherein M is osmium.
84 . The integrated circuit device of claim 74 wherein M is rhodium.
85 . The integrated circuit device of claim 74 wherein M is iridium.
86 . The integrated circuit device of claim 74 wherein M is nickel.
87 . The integrated circuit device of claim 74 wherein M is palladium.
88 . The integrated circuit device of claim 74 wherein M is platinum.