CHARGE PUMP DRIVE CIRCUIT

1 . A charge pump drive circuit comprising:

a first MOSFET (Metal Oxide Semiconductor Field Effect Transistor); and

a second MOSFET,

wherein said first MOSFET and said second MOSFET are different in channel type and provided to form a complementary inverter circuit,

said complementary inverter circuit drives a charge pump circuit based on an input potential inputted to an input terminal, and

a first gate of said first MOSFET and a second gate of said second MOSFET are connected to said input terminal such that a potential at said first gate is different from a potential at said second gate.

2 . The charge pump drive circuit according to claim 1 , further comprising:

a first resistance element provided between said first gate and said input terminal; and

a first constant current source configured to supply a current to said first gate based on a first power source voltage corresponding to a difference between a first power source potential and a second power source potential.

3 . The charge pump drive circuit according to claim 2 , further comprising:

a second resistance element provided between said second gate and said input terminal; and

a second constant current source configured to supply a current to said second gate based on a second power source voltage,

wherein said first power source voltage and said second power source voltage are opposite in sign and same in magnitude.

4 . The charge pump drive circuit according to claim 3 , wherein a potential difference between ends of said first resistance element is set to have a value which is based on a threshold voltage of said first MOSFET and said first power source voltage when said input potential is equal to said second power source potential, and

a potential difference between ends of said second resistance element is set to have a value which is based on a threshold voltage of said second MOSFET and said second power source voltage when said input potential is equal to said first power source potential.

5 . The charge pump drive circuit according to claim 3 , further comprising:

a P-channel type MOSFET connected to said first gate and an end of said first resistance element; and

an N-channel type MOSFET connected to said second gate and an end of said second resistance element,

wherein said N-channel type MOSFET functions as a current mirror circuit, and

said P-channel type MOSFET functions as a current mirror circuit.

6 . The charge pump drive circuit according to claim 3 , wherein each of said first resistance element and said second resistance element includes a transistor.

7 . The charge pump drive circuit according to claim 3 , wherein each of said first resistance element and said second resistance element includes a plurality of transistors connected in series.

8 . The charge pump drive circuit according to claim 3 , wherein each of said first resistance element and said second resistance element includes a diode.

9 . The charge pump drive circuit according to claim 3 , wherein each of said first resistance element and said second resistance element includes a plurality of diodes connected in series.

10 . A semiconductor device comprising:

a charge pump circuit; and

a charge pump drive circuit,

wherein said charge pump drive circuit includes:

a first MOSFET (Metal Oxide Semiconductor Field Effect Transistor); and

a second MOSFET,

said first MOSFET and said second MOSFET are different in channel type and provided to form a complementary inverter circuit,

said complementary inverter circuit drives said charge pump circuit based on an input potential inputted to an input terminal, and

a first gate of said first MOSFET and a second gate of said second MOSFET are connected to said input terminal such that a potential at said first gate is different from a potential at said second gate.

11 . A voltage converting method comprising:

driving a charge pump circuit based on an input potential inputted to an input terminal,

wherein a first gate of a first MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and a second gate of a second MOSFET are connected to said input terminal such that a potential at said first gate is different from a potential at said second gate, and

said first MOSFET and said second MOSFET are different in channel type and provided to form a complementary inverter circuit.