Metal oxide TFT with improved carrier mobility
A fabrication method is used in conjunction with a semiconductor device having a metal oxide active layer less than 100 nm thick and the upper major surface and the lower major surface have material in abutting engagement to form underlying interfaces and overlying interfaces. The method of fabrication includes controlling interfacial interactions in the underlying interfaces and the overlying interfaces to adjust the carrier density in the adjacent metal oxide by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the material in abutting engagement. The method also includes one or both steps of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface and controlling interactions in overlying interfaces by surface treatment of the metal oxide film performed prior to deposition of material on the metal oxide layer.
1. In conjunction with a semiconductor device having a metal oxide active layer less than 100 nm thick with an upper major surface and a lower major surface and the upper major surface and the lower major surface having material in abutting engagement to form underlying interfaces and overlying interfaces, a method of fabrication that includes controlling interfacial interactions to adjust the carrier density in the adjacent metal oxide comprising the steps of;
controlling interactions in the underlying interfaces and the overlying interfaces by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the material in abutting engagement; and
performing one of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface and controlling interactions in overlying interfaces by surface treatment of the metal oxide film performed prior to deposition of material on the metal oxide layer.
2. A method as claimed in claim 1 wherein the step of selecting a metal oxide for the metal oxide active layer includes selecting one of zinc oxide (ZnO), indium zinc oxide (InZnO), and indium zinc gallium oxide (InZnGaO).
3. A method as claimed in claim 1 wherein the step of selecting a specific material for the material in abutting engagement includes selecting one of inert material and active material.
4. A method as claimed in claim 3 wherein the step of selecting a specific material for the material in abutting engagement includes selecting an inert material from one of Al 2 O 3 , SiO 2 , SiN, TaO, MgF 2 , polyimide, BCB, and photoresist.
5. A method as claimed in claim 3 wherein the step of selecting a specific material for the material in abutting engagement includes selecting an active material from one of Al, Zn, Ti, Ta, ITO, Li, and Mg.
6. A method as claimed in claim 1 wherein the step of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface includes one of ion sputtering of the underlying material, gas treatment using one of a reducing gas and an oxidizing gas, and liquid treatment.
7. A method as claimed in claim 1 wherein the step of controlling interactions in overlying interfaces by surface treatment of the metal oxide film includes sputter etching using one of a reducing material and an oxidizing material.
8. A method as claimed in claim 1 wherein the step of controlling interactions in overlying interfaces includes selecting a method of deposition of material on the metal oxide active layer forming a component of the overlying interface.
9. A method as claimed in claim 8 wherein the step of selecting a method of deposition of material on the metal oxide includes selecting from one of a passive method and an active method.
10. A method as claimed in claim 9 wherein the step of selecting a method of deposition of material on the metal oxide includes selecting a passive method from one of evaporation, low damage sputtering, solution based processing, spin coating, dipping, and printing.
11. A method as claimed in claim 9 wherein the step of selecting a method of deposition of material on the metal oxide includes selecting an active method from one of high temperature CVD and PECVD.
12. A method as claimed in claim 1 wherein the metal oxide layer is less than 50 nm thick.
13. In conjunction with a semiconductor device having a metal oxide active layer less than 100 nm thick with an upper major surface and a lower major surface and the upper major surface and the lower major surface having material in abutting engagement to form underlying interfaces and overlying interfaces, a method of fabrication that includes controlling interfacial interactions to adjust the carrier density in the adjacent metal oxide comprising the steps of;
controlling interactions in the underlying interfaces and the overlying interfaces by selecting a metal oxide for the metal oxide active layer and by selecting a specific material for the material in abutting engagement including one of an inert material from one of Al 2 O 3 , SiO 2 , SiN, TaO, MgF 2 , polyimide, BCB, and photoresist and an active material from one of Al, Zn, Ti, Ta, ITO, Li, and Mg; and
performing one of controlling interactions in underlying interfaces by surface treatment of an underlying material forming a component of the underlying interface including one of ion sputtering of the underlying material, gas treatment using one of a reducing gas and an oxidizing gas, and liquid treatment and controlling interactions in overlying interfaces by surface treatment of the metal oxide film performed prior to deposition of material on the metal oxide layer including sputter etching using one of a reducing material and an oxidizing material and selecting a method of deposition of material on the metal oxide active layer forming a component of the overlying interface.
14. A method as claimed in claim 13 wherein the step of selecting a method of deposition of material on the metal oxide includes selecting from one of a passive method and an active method.
15. A method as claimed in claim 13 wherein the step of selecting a method of deposition of material on the metal oxide includes selecting a passive method from one of evaporation, low damage sputtering, solution based processing, spin coating, dipping, and printing.
16. A method as claimed in claim 13 wherein the step of selecting a method of deposition of material on the metal oxide includes selecting an active method from one of high temperature CVD and PECVD.
17. A method as claimed in claim 13 wherein the metal oxide layer is less than 50 nm thick.
18. A metal oxide semiconductor device on a substrate comprising:
a metal oxide active layer less than 100 nm thick with an upper major surface and a lower major surface and the upper major surface and the lower major surface having material in abutting engagement to form underlying interfaces and overlying interfaces; and
one of a treated surface of an underlying material forming a component of the underlying interface controlling interactions in underlying interfaces to adjust the carrier density in the adjacent metal oxide and a treated surface of the metal oxide film performed prior to deposition of material on the metal oxide layer controlling interactions in overlying interfaces to adjust the carrier density in the adjacent metal oxide.
19. A metal oxide semiconductor device on a substrate as claimed in claim 18 wherein the substrate is formed of flexible material.
20. A metal oxide semiconductor device on a substrate as claimed in claim 18 wherein the metal oxide active layer includes one of zinc oxide (ZnO), indium zinc oxide (IZnO), and indium zinc gallium oxide (IZnGaO) and the material in abutting engagement includes one of an inert material from one of Al 2 O 3 , SiO 2 , SiN, TaO, MgF 2 , polyimide, BCB, and photoresist and an active material from one of Al, Zn, Ti, Ta, ITO, Li, and Mg.
21. A metal oxide semiconductor device on a substrate as claimed in claim 18 wherein the metal oxide active layer is less than 50 nm thick.