Contact device and method for producing the same
View Patent ↗Provided is a method for producing a contact device, including a step of forming a first conductive film; a step of forming a second conductive film containing a metal or an alloy of the metal on the first conductive film; a step of forming a third conductive film on the second conductive film; and a step of forming a surface layer on the third conductive film, the surface layer containing an oxidative product of the metal in the second conductive film, which metal has been diffused to be precipitated out from the surface of the third conductive film and oxidized.
1. A method for producing a contact device, comprising:
a step of forming a first conductive film on a support layer;
a step of forming a second conductive film containing a metal or a metal alloy on the first conductive film;
a step of forming a third conductive film on the second conductive film; and
a step of forming a surface layer that is brought into contact with a facing contact, the surface layer containing an oxidative product of the metal in the second conductive film, which metal has been diffused to be precipitated out from a surface of the third conductive film and oxidized.
2. The method according to claim 1 ,
wherein the step of forming the surface layer includes a heat treatment in an oxygen atmosphere.
3. The method according to claim 2 ,
wherein a temperature for the heat treatment is lower than a temperature at which the metal or the metal alloy gets alloyed with the first conductive film.
4. The method according to claim 2 ,
wherein a temperature for the heat treatment is lower than a temperature at which the metal or the metal alloy gets alloyed with the third conductive film.
5. The method according to claim 1 ,
wherein a diffusion coefficient at which the metal or the metal alloy diffuses in the third conductive film is larger than a diffusion coefficient at which the metal or the metal alloy diffuses in the first conductive film.
6. The method according to claim 1 ,
wherein the metal or the metal alloy contains nickel (Ni).
7. The method according to claim 1 ,
wherein the first conductive film contains gold (Au), and the third conductive film contains gold (Au) or a gold-palladium (Au—Pd) alloy.
8. The method according to claim 7 ,
wherein a content rate of palladium in the third conductive film is 20 atomic percent or lower.
9. The method according to claim 1 ,
wherein the surface layer contains the oxidative product of the metal or the metal alloy at or above a 30 nm depth from a surface of the surface layer.
10. A switch, comprising a contact device produced by the method according to claim 1 , wherein in a semiconductor test apparatus, the switch connects and disconnects a test signal, or switches test signals.
11. A semiconductor test apparatus, comprising the switch according to claim 10 .
12. A contact device, comprising:
a fixed contact fixed on a support layer;
an actuator that moves close to and away from the support layer; and
a moving contact supported by the actuator to be brought into and out of contact with the fixed contact along with the actuator moving close and away,
wherein the contact device becomes electrically continuous when the fixed contact and the moving contact are brought into contact, and
the fixed contact includes:
a first conductive film formed on the support layer;
a second conductive film formed on the first conductive film and containing a metal or an alloy of the metal;
a third conductive film formed on the second conductive film; and
a surface layer that is brought into contact with the moving contact, the surface layer containing an oxidative product of the metal in the second conductive film, which metal has been diffused to be precipitated out from a surface of the third conductive film and oxidized.
13. The contact device according to claim 12 ,
wherein the moving contact includes:
a first conductive film formed on the actuator;
a second conductive film formed on the first conductive film and containing a metal or an alloy of the metal;
a third conductive film formed on the second conductive film; and
a surface layer that is brought into contact with the fixed contact, the surface layer containing an oxidative product of the metal in the second conductive film, which metal has been diffused to be precipitated out from a surface of the third conductive film and oxidized.
14. The contact device according to claim 12 ,
wherein the actuator includes a piezoelectric material layer that expands or contracts when a voltage is applied thereto.
15. The contact device according to claim 12 ,
wherein the actuator includes: a heater that generates heat when energized by a current; and a bimorph including a member that expands when heated by the heater.