Method of manufacturing semiconductor device
View Patent ↗A method for manufacturing a semiconductor device, in which a substrate is disposed in a chamber and a fluorine-containing silicon oxide film is formed on the substrate using a plasma CVD process. The fluorine-containing silicon oxide film is formed such that the release of fluorine from this silicon oxide layer is suppressed. According to this semiconductor device manufacturing method, a stable semiconductor device can be provided such that the device includes a fluorine-containing silicon oxide film (FSG film) at which the release of fluorine is suppressed, and thus peeling does not occur.
1. A method for manufacturing a semiconductor device, the method comprising the steps of:
disposing a substrate in a chamber;
forming a silicon oxide film that includes fluorine on the substrate from a raw material gas that includes SiF 4 using a plasma CVD process; and
increasing a proportion of SiF. that is present in the chamber, for increasing the intake of SiF. into the fluorine-including silicon oxide film and thus suppressing release of fluorine from the silicon oxide film,
wherein the SF. is generated in a plasma generator that is maintained at a same pressure as the chamber.
2. The method for manufacturing a semiconductor device of claim 1 , wherein the step of increasing the proportion of SiF. that is present in the chamber comprises introducing SiF. directly into the chamber.
3. The method for manufacturing a semiconductor device of claim 1 , wherein the step of increasing the proportion of SiF. that is present in the chamber comprises maintaining the chamber at a pressure of about 2 mTorr.
4. The method for manufacturing a semiconductor device of claim 1 , wherein the step of increasing the proportion of SiF. that is present in the chamber comprises maintaining the chamber at a pressure of about 1 mTorr to 2 mTorr.
5. The method for manufacturing a semiconductor device of claim 1 , wherein the step of increasing the proportion of SiF. that is present in the chamber comprises maintaining the chamber at a pressure of not more than 2 mTorr.
6. The method for manufacturing a semiconductor device of claim 1 , wherein the step of increasing the proportion of SiF. that is present in the chamber comprises maintaining the chamber at a pressure lower than a pressure at which partially decomposed components SiF 3 . and SiF 2 . of the raw material gas that includes SiF 4 are generated.
7. The method for manufacturing a semiconductor device of claim 1 , wherein the step of increasing the proportion of SiF. that is present in the chamber comprises temporarily halting flow of the raw material gas that includes SiF 4 , and evacuating the chamber to discharge partially decomposed components SiF 3 . and SiF 2 . of the raw material gas that includes SiF 4 .