EXPOSURE EQUIPMENT, EXPOSURE METHOD, AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE
Provided is an exposure equipment having high resolution even when a reticle is inclined. The exposure equipment includes: an optical system for projecting on a wafer ( 130 ), a pattern formed on a surface of a reticle ( 101 ); a determining section for determining a tilt angle of the reticle ( 101 ) with respect to a plane perpendicular to an optical axis direction of the optical system; and an adjusting section for adjusting a position of the wafer ( 130 ) based on the tilt angle determined by the determining section.
1 . An exposure equipment, comprising:
an optical system for projecting, on a wafer, a pattern formed on a surface of a reticle;
a determining section for determining a tilt angle of the reticle with respect to a plane perpendicular to an optical axis direction of the optical system; and
a wafer stage for holding the wafer.
2 . The exposure equipment according to claim 1 , further comprising an adjusting section for adjusting a position of the wafer on the wafer stage based on the tilt angle determined by the determining section.
3 . The exposure equipment according to claim 2 , wherein the adjusting section adjusts a surface of the wafer to be parallel to the surface of the reticle, which is perpendicular to the optical axis direction of the optical system, based on the tilt angle determined by the determining section.
4 . The exposure equipment according to claim 1 , wherein the determining section comprises a light-emitting device for emitting light to the reticle and a light-receiving device for receiving the light reflected on the reticle.
5 . The exposure equipment according to claim 4 , wherein the determining section comprises at least four pairs of the light-emitting device and the light-receiving device.
6 . The exposure equipment according to claim 4 , wherein the light-receiving device is movable.
7 . The exposure equipment according to claim 1 , further comprising a storing section for storing the tilt angle determined by the determining section.
8 . An exposure method, comprising:
determining a tilt angle of a reticle with respect to a plane perpendicular to an optical axis direction of an optical system;
adjusting a surface of a wafer to be parallel to a surface of the reticle, which is perpendicular to the optical axis direction of the optical system, based on the determined tilt angle; and
projecting, on the wafer, a pattern formed on the surface of the reticle.
9 . The exposure method according to claim 8 , wherein the determining a tilt angle comprises emitting light to the reticle and receiving the light reflected on the reticle.
10 . The exposure method according to claim 9 , wherein the emitting light to the reticle and receiving the light reflected on the reticle is performed on at least four points on the reticle.
11 . A manufacturing method for a semiconductor device, comprising forming a pattern on a wafer by using the exposure equipment according to claim 1 .