Dual liner capping layer interconnect structure
View Patent ↗A high tensile stress capping layer on Cu interconnects in order to reduce Cu transport and atomic voiding at the Cu/dielectric interface. The high tensile dielectric film is formed by depositing multiple layers of a thin dielectric material, each layer being under approximately 50 angstroms in thickness. Each dielectric layer is plasma treated prior to depositing each succeeding dielectric layer such that the dielectric cap has an internal tensile stress.
1. A method for forming a semiconductor device, comprising the steps of:
providing a dielectric layer with at least one conductive interconnect partially embedded therein;
depositing a compressive capping layer on said dielectric layer and said at least one conductive interconnect;
removing the portion of said compressive capping layer on said at least one conductive interconnect;
depositing a tensile capping layer on said compressive capping layer and said at least one conductive interconnect; and
removing said tensile capping layer from said compressive capping layer.
2. The method of claim 1 wherein said tensile capping layer is deposited by chemical vapor deposition at a pressure of approximately 7 Torr, a temperature of approximately 400° C., and a high frequency power of approximately 600 Watts and low frequency power of approximately 0 Watts.
3. The method of claim 2 wherein said chemical vapor deposition comprises a gas composition and flow rate of SiH 4 at approximately 150 sccm, N 2 at approximately 8,000 sccm, and NH 3 at approximately 2,500 sccm.
4. The method of claim 1 wherein said tensile capping layer is a dielectric material selected from the group consisting of silicon dioxide, silicon nitride and a compound of silicon, carbon, nitrogen and hydrogen in the form of SiC x N y H z where x, y and z are variable percentages.
5. The method of claim 1 wherein said tensile capping layer is a multiple deposition capping layer deposited on said dielectric layer and said at least one conductive interconnect by a least two sequential deposition and plasma treatment steps.