Alpha voltaic batteries and methods thereof

1. A method for generating power, the method comprising:

emitting alpha particles from an alpha particle emitter into at least one absorption and conversion area, the absorption and conversion area comprises at least one layer of a fluorescent material;

preventing at least a portion of the emitted alpha particles from the at least one alpha particle emitter from damaging at least one p/n junction in the at least one semiconductor material with the absorption and conversion area; and

converting at least a portion of energy from the alpha particles into electron-hole pairs for collection by the at least one p/n junction in the at least one semiconductor material.

2. The method as set forth in claim 1 wherein the at least one alpha particle emitter is embedded in at least one base layer, wherein the at least one absorption and conversion area is between the at least one base layer with the alpha particle emitter and the at least one layer of a semiconductor material.

3. The method as set forth in claim 2 further comprising reflecting at least a portion of the electron-hole pairs at an interface between the at least one absorption and conversion area and the at least one base layer to the at least one p/n junction in the at least one layer of semiconductor material.

4. The method as set forth in claim 3 further comprising providing at least one coating at the interface which provides the at least partial reflectivity.

5. The method as set forth in claim 1 wherein the at least one alpha particle emitter is embedded in at least a portion of the at least one absorption and conversion area.

6. The method as set forth in claim 5 wherein the at least one alpha particle emitter is substantially homogeneously disbursed through the at least one absorption and conversion area.

7. The method as set forth in claim 5 wherein the at least one alpha particle emitter is disbursed through the at least one absorption and conversion area in a graded manner with proportionally less of the at least one alpha particle emitter near the at least one layer of semiconductor material.

8. The method as set forth in claim 1 wherein the at least one alpha particle and the at least one absorption and conversion area comprise a plurality of alternating layers.

9. The method as set forth in claim 1 wherein the at least one layer of semiconductor material has a high bandgap ranging between about 1 eV and about 3 eV.

10. The method as set forth in claim 1 further comprising converting at least another portion of energy from the alpha particles into electron-hole pairs for collection by at least one p/n junction in another at least one layer of semiconductor material.

11. A method for generating power, the method comprising:

emitting alpha particles from an alpha particle emitter into at least one absorption and conversion area, the absorption and conversion area comprises one of a rare earth oxide, a rare earth doped garnet crystal, and quantum dots;

preventing at least a portion of the emitted alpha particles from the at least one alpha particle emitter from damaging at least one p/n junction in at least one semiconductor material with the absorption and conversion area; and

converting at least a portion of energy from the alpha particles into electron-hole pairs for collection by the at least one p/n junction in the at least one semiconductor material.

12. A method for generating power, the method comprising:

emitting alpha particles from an alpha particle emitter into at least one absorption and conversion area on at least one semiconductor material;

preventing at least a portion of the emitted alpha particles from the at least one alpha particle emitter from damaging at least one p/n junction in the at least one semiconductor material with the absorption and conversion area; and

fluorescing photons in the at least one absorption and conversion area in response to at least a portion of energy from the alpha particles into electron-hole pairs for collection by the at least one p/n junction in the at least one semiconductor material.

13. The method as set forth in claim 12 wherein the at least one alpha particle emitter is embedded in at least one base layer, wherein the at least one absorption and conversion area is between the at least one base layer with the alpha particle emitter and the at least one layer of a semiconductor material.

14. The method as set forth in claim 13 further comprising reflecting at least a portion of the electron-hole pairs at an interface between the at least one absorption and conversion area and the at least one base layer to the at least one p/n junction in the at least one layer of semiconductor material.

15. The method as set forth in claim 13 further comprising providing at least one coating at the interface which provides the at least partial reflectivity.

16. The method as set forth in claim 12 wherein the at least one alpha particle emitter is embedded in at least a portion of the at least one absorption and conversion area.

17. The method as set forth in claim 16 wherein the at least one alpha particle emitter is substantially homogeneously disbursed through the at least one absorption and conversion area.

18. The method as set forth in claim 16 wherein the at least one alpha particle emitter is disbursed through the at least one absorption and conversion area in a graded manner with proportionally less of the at least one alpha particle emitter near the at least one layer of semiconductor material.

19. The method as set forth in claim 12 wherein the at least one alpha particle and the at least one absorption and conversion area comprise a plurality of alternating layers.

20. The method as set forth in claim 12 wherein the absorption and conversion area comprises at least one layer of a fluorescent material.

21. The method as set forth in claim 12 wherein the absorption and conversion area comprises one of a rare earth oxide, a rare earth doped garnet crystal, and quantum dots.

22. The method as set forth in claim 12 wherein the at least one layer of semiconductor material has a high bandgap ranging between about 1 eV and about 3 eV.

23. The method as set forth in claim 12 further comprising converting at least another portion of energy from the alpha particles into electron-hole pairs for collection by at least one p/n junction in another at least one layer of semiconductor material.