IP Library Granted Patent US 7,673,519
Granted Patent B1
US 7,673,519 · App. 12/201,211 · Granted Mar 9, 2010

Pressure sensor featuring offset cancellation and method of making

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Quick Facts
Patent No.
US 7,673,519
App. No.
12/201,211
Granted
Mar 9, 2010
Kind
B1
Abstract

A pressure sensor includes a first set of electrodes, a second set of electrodes, and a common electrode. The first and second sets of electrodes overlie an insulative surface, wherein the first set of electrodes represent sense capacitor bottom electrodes and the second set of electrodes represent reference capacitor bottom electrodes. The second set of electrodes is configured in an interleaved arrangement with the first set of electrodes, wherein the geometry of individual electrodes of the first set of electrodes substantially matches the geometry of individual electrodes of the second set of electrodes. In addition, the common electrode represents a sense and reference capacitor top electrode that is (i) overlying, (ii) spaced from, and (iii) configured in connection with the first and second sets of electrodes to form a common pressure cavity, wherein the common electrode includes first portions corresponding to sense membrane portions and second portions corresponding to reference membrane portions, further wherein an area of a sense membrane portion is greater than an area of a reference membrane portion.

Claims (40)

1. A pressure sensor, comprising:

a first set of electrodes overlying an insulative surface;

a second set of electrodes overlying the insulative surface, the second set of electrodes being configured in an interleaved arrangement with the first set of electrodes, wherein a geometry of individual electrodes of the first set of electrodes substantially matches a geometry of individual electrodes of the second set of electrodes; and

a common electrode (i) overlying, (ii) spaced from, and (iii) configured in connection with the first and second sets of electrodes to form a common pressure cavity, wherein the common electrode includes first portions corresponding to sense membrane portions and second portions corresponding to reference membrane portions, further wherein an area of a sense membrane portion is greater than an area of a reference membrane portion.

2. The device of claim 1 , wherein the geometry of individual electrodes of the first set of electrodes matches the geometry of the individual electrodes of the second set of electrodes.

3. The device of claim 2 , further wherein the electrodes of the first set of electrodes are each characterized by a length dimension and a width dimension, the electrodes of the second set of electrodes are each characterized by a length dimension and a width dimension, and further wherein the length and width dimensions of each of the electrodes in the first set of electrodes equals the length and width dimensions of each of the electrodes in the second set of electrodes.

4. The device of claim 1 , wherein the first set of electrodes comprise sense capacitor bottom plate electrodes, the second set of electrodes comprise reference capacitor bottom plate electrodes, and the common electrode comprises a capacitor top plate electrode in common with the sense and reference capacitor bottom plate electrodes.

5. The device of claim 1 , wherein the first and second sets of electrodes are configured in a layout including an axis of substantial symmetry extending along one dimension of the common electrode and a pattern of repeating first and second sets of electrodes about another axis along another dimension of the common electrode.

6. The device of claim 5 , further comprising:

a first conductive runner electrically coupled to the first set of electrodes; and

a second conductive runner electrically coupled to the second set of electrodes, wherein a geometry of the first conductive runner substantially matches a geometry of the second conductive runner, further wherein the first and second conductive runners extend in a direction parallel to the axis of substantial symmetry.

7. The device of claim 6 , wherein the geometry of the first conductive runner substantially matches the geometry of the second conductive runner.

8. The device of claim 1 , wherein the first portions of the common electrode corresponding to the sense membrane portions are each characterized by a length dimension and a width dimension, the second portions of the common electrode corresponding to the reference membrane portions are each characterized by a length dimension and a width dimension, wherein the length dimension of the first portions equals the length dimension of the second portions, and wherein the width dimension of the first portions is greater than the width dimension of the second portions.

9. The device of claim 1 , wherein the common electrode anchors to the insulative surface for establishing (i) the first portions corresponding to the sense membrane portions and (ii) the second portions corresponding to the reference membrane portions.

10. The device of claim 1 , wherein the common electrode is one of (i) directly anchored to the dielectric surface or (ii) indirectly anchored to the dielectric surface.

11. The device of claim 1 , wherein the first set of electrodes includes two electrodes, and wherein the second set of electrodes includes two electrodes.

12. The device of claim 1 , wherein the geometry of individual electrodes of the second set of electrodes comprises an equivalent geometry, wherein the equivalent geometry of each individual electrode comprises a first half and a second half, wherein each of the first half and second half is positioned opposite sides of a corresponding electrode of the first set of electrodes along a length dimension of the corresponding electrode.

13. The device of claim 12 , further wherein the first portions of the common electrode corresponding to the first half and the second half equivalent geometry of individual electrodes of the second set of electrodes effectively share a corresponding percentage of the second portions of the common electrode.

14. The device of claim 13 , further wherein each first half equivalent geometry of the individual electrodes of the second set of electrodes effectively shares a first half of a corresponding second portion, and wherein the second half equivalent geometry of the individual electrodes of the second set of electrodes effectively shares a second half of the corresponding second portion.

15. The device of claim 1 , further comprising:

a semiconductor substrate including an doped well region, and wherein the insulative surface comprises a surface of a dielectric layer overlying the doped well region of the semiconductor substrate, further wherein the first set of electrodes, the second set of electrodes, and the common electrode also overly the doped well region of the substrate.

16. A pressure sensor, comprising:

a first set of electrodes overlying an insulative surface;

a second set of electrodes overlying the insulative surface, the second set of electrodes being configured in an interleaved arrangement with the first set of electrodes, wherein a geometry of individual electrodes of the first set of electrodes substantially matches a geometry of individual electrodes of the second set of electrodes, further wherein the first and second sets of electrodes are configured in a layout including an axis of substantial symmetry;

a first conductive runner electrically coupled to the first set of electrodes;

a second conductive runner electrically coupled to the second set of electrodes, wherein a geometry of the first conductive runner substantially matches a geometry of the second conductive runner, further wherein the first and second conductive runners extend in a direction parallel to the axis of substantial symmetry; and

a common electrode (i) overlying, (ii) spaced from, and (iii) configured in connection with the first and second sets of electrodes to form a common pressure cavity,

wherein the common electrode includes first portions corresponding to sense membrane portions and second portions corresponding to reference membrane portions,

wherein an area of a sense membrane portion is greater than an area of a reference membrane portion,

wherein the axis of substantial symmetry extends along one dimension of the common electrode and a pattern of repeating first and second sets of electrodes extends about another axis along another dimension of the common electrode, and

wherein the common electrode anchors to the insulative surface for establishing (i) the first portions corresponding to the sense membrane portions and (ii) the second portions corresponding to the reference membrane portions.

17. A method of making a pressure sensor, comprising:

forming a first set of electrodes overlying an insulative surface;

forming a second set of electrodes overlying the insulative surface, the second set of electrodes being configured in an interleaved arrangement with the first set of electrodes, wherein a geometry of individual electrodes of the first set of electrodes substantially matches a geometry of individual electrodes of the second set of electrodes; and

forming a common electrode (i) overlying, (ii) spaced from, and (iii) configured in connection with the first and second sets of electrodes to form a common pressure cavity, wherein the common electrode includes first portions corresponding to sense membrane portions and second portions corresponding to reference membrane portions, further wherein an area of a sense membrane portion is greater than an area of a reference membrane portion.

18. The method of claim 17 , wherein forming the first and second sets of electrodes comprises configuring the first and second sets of electrodes in a layout including an axis of substantial symmetry extending along one dimension of the common electrode and repeating a pattern of the first and second sets of electrodes along another dimension of the common electrode.

19. The method of claim 18 , wherein prior to forming the common electrode, the method further comprises:

forming a first conductive runner electrically coupled to the first set of electrodes overlying the insulative surface; and

forming a second conductive runner electrically coupled to the second set of electrodes overlying the insulative surface, wherein a geometry of the first conductive runner substantially matches a geometry of the second conductive runner, further wherein the first and second conductive runners extend in a direction parallel to the axis of substantial symmetry.

20. The method of claim 19 , wherein forming the common electrode further includes anchoring the common electrode to the insulative surface for establishing (i) the first portions corresponding to the sense membrane portions and (ii) the second portions corresponding to the reference membrane portions.

Assignments (21)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 053547/0421 →
CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
Reel/Frame 048734/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 041703/0536 →
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 040925/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 4, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: NORTH STAR INNOVATIONS INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 13, 2016
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To: MORGAN STANLEY SENIOR FUNDING, INC.
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ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS Recorded Jan 12, 2016
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0553 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037354/0757 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0194 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0027 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037356/0866 →
PATENT RELEASE Recorded Dec 21, 2015
From: CITIBANK, N.A., AS COLLATERAL AGENT
To: FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 037357/0120 →
SECURITY AGREEMENT Recorded Nov 6, 2013
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Sep 3, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Sep 3, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Sep 1, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS COLLATERAL AGENT
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SECURITY AGREEMENT Recorded Sep 1, 2010
From: FREESCALE SEMICONDUCTOR, INC.
To: CITIBANK, N.A., AS NOTES COLLATERAL AGENT
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