Method for treatment of a gas stream containing silicon tetrafluoride and hydrogen chloride
View Patent ↗The present invention is directed to a method for treatment of a gas stream comprising silicon tetrafluoride and hydrogen chloride. For example, the present invention is directed to a method for treatment of such a gas stream that involves contacting the gas stream with a metal that reacts with the hydrogen chloride to provide a treated gas stream having reduced hydrogen chloride content. The present invention is further directed to methods for subjecting silicon tetrafluoride and hydrogen chloride-containing gas streams to elevated pressure to provide gas streams suitable for transport.
1. A process for removing hydrogen chloride from a gas stream comprising silicon tetrafluoride and having an initial hydrogen chloride content, the process comprising contacting the gas stream with a source of a metal, the metal being selected from the group consisting of zinc, magnesium, and combinations thereof, wherein the metal reacts with the hydrogen chloride, thereby preferentially removing hydrogen chloride from the gas stream and providing a treated gas stream comprising silicon tetrafluoride and having a reduced hydrogen chloride content that is no more than about 90% (v/v) of the initial hydrogen chloride content, wherein no more than about 1% (v/v) of the silicon tetrafluoride is removed from the gas stream during said contacting.
2. A process as set forth in claim 1 wherein the gas stream has a moisture content of at least about 100 ppm.
3. A process as set forth in claim 1 wherein the gas stream has a moisture content of from about 100 ppm to about 2500 ppm.
4. A process as set forth in claim 1 wherein the metal exhibits a removal efficiency that is at least about 95%.
5. A process as set forth in claim 1 wherein the reduced hydrogen chloride content is no more than about 10% (v/v) of the initial hydrogen chloride content.
6. A process as set forth in claim 1 wherein the reduced hydrogen chloride content is achieved within about 2 minutes of beginning said contacting.
7. A process as set forth in claim 1 wherein the metal source comprises a metal oxide, metal hydroxide, or a combination thereof.
8. A process as set forth in claim 1 wherein the metal exhibits an electronegativity of less than about 1.65.
9. A process as set forth in claim 1 wherein the metal is zinc and the source of metal is selected from the group consisting of zinc oxide, zinc hydroxide, zinc and combinations thereof.
10. A process as set forth in claim 9 wherein zinc reacts with hydrogen chloride to produce zinc chloride.
11. A process as set forth in claim 1 wherein the metal is magnesium and the source of metal is selected from the group consisting of magnesium oxide, magnesium hydroxide, magnesium and combinations thereof.
12. A process as set forth in claim 11 wherein magnesium reacts with hydrogen chloride to produce magnesium chloride.
13. A process as set forth in claim 1 wherein said contacting is conducted at a temperature of from about 25° C. to about 90° C.
14. A process as set forth in claim 1 wherein said contacting is conducted at a pressure of from about 50 psig to about 1500 psig.
15. A process as set forth in claim 1 wherein the surface area of the metal source is at least about 80 ft 2 /ft 3 .
16. A process as set forth in claim 15 wherein the surface area of the metal source is from about 80 ft 2 /ft 3 to about 600 ft 2 /ft 3 .
17. A process as set forth in claim 1 wherein the gas stream is contacted with the metal at a rate of at least about 0.05 lb/hr·ft 2 .
18. A process as set forth in claim 1 wherein the gas stream is contacted with the metal at a rate of from about 0.05 lb/hr·ft 2 to about 0.5 lb/hr·ft 2 .
19. A process as set forth in claim 1 wherein at least a portion of the metal source is in the form of particles ranging in size of from about 500 μm to about 5000 μm.
20. A process as set forth in claim 1 wherein the metal source exhibits a porosity of from about 30% to about 80%.
21. A process as set forth in claim 1 wherein the gas stream is contacted with a bed comprising the metal source.
22. A process as set forth in claim 21 wherein the pressure drop across the bed is from about 1 psig to about 25 psig.
23. A process as set forth in claim 21 wherein the gas stream passes over the bed of metal source at a space velocity of at least about 0.1 ft/minute.
24. A process as set forth in claim 21 wherein the bed is in the form of a packed bed, fluidized bed, or moving bed.
25. A process for removing hydrogen chloride from a gas stream comprising silicon tetrafluoride and having an initial pressure and initial hydrogen chloride content, the process comprising:
compressing the gas stream during one or more stages of increasing pressure greater than said initial pressure; and
contacting the gas stream with a source of a metal, the metal being selected from the group consisting of zinc, magnesium, and combinations thereof, thereby providing a treated gas stream having a reduced hydrogen chloride content that is no more than about 90% (v/v) of the initial hydrogen chloride content, wherein no more than about 1% (v/v) of the silicon tetrafluoride is removed from the gas stream during said contacting.
26. A process as set forth in claim 25 wherein said compressing comprises subjecting the gas stream to a first stage of increasing pressure of at least about 100 psig.
27. A process as set forth in claim 25 wherein said compressing comprises subjecting the gas stream to a first stage of increasing pressure of from about 100 psig to about 700 psig.
28. A process as set forth in claim 26 wherein, prior to said first stage, the gas stream has a moisture content of at least about 100 ppm.
29. A process as set forth in claim 26 wherein, prior to said first stage, the gas stream has a moisture content of from about 100 ppm to about 2500 ppm.
30. A process as set forth in claim 26 wherein said compressing comprises subjecting the gas stream to a second stage of increasing pressure of at least about 800 psig.
31. A process as set forth in claim 26 wherein said compressing comprises subjecting the gas stream to a second stage of increasing pressure of from about 1000 psig to about 1800 psig.
32. A process as set forth in claim 30 wherein, prior to said second stage, the gas stream has a moisture content of at least about 100 ppm.
33. A process as set forth in claim 30 wherein, prior to said second stage, the gas stream has a moisture content of from about 100 ppm to about 2500 ppm.
34. A process as set forth in claim 26 wherein said contacting occurs prior to said first stage.
35. A process as set forth in claim 30 wherein said contacting occurs between said first stage and said second stage.
36. A process as set forth in claim 25 wherein during said contacting the metal reacts with the hydrogen chloride, thereby providing a treated gas stream comprising silicon tetrafluoride and having a reduced hydrogen chloride content.
37. A process as set forth in claim 36 wherein the reduced hydrogen chloride content is no more than about 70% (v/v) of the initial hydrogen chloride content.
38. A process as set forth in claim 36 wherein the reduced hydrogen chloride content is achieved within about 2 minutes of beginning said contacting.
39. A process as set forth in claim 25 wherein the metal is zinc and the source of metal is selected from the group consisting of zinc oxide, zinc hydroxide, zinc and combinations thereof.
40. A process as set forth in claim 39 wherein zinc reacts with hydrogen chloride to produce zinc chloride.
41. A process as set forth in claim 25 wherein said contacting is conducted at a temperature of from about 25° C. to about 90° C.
42. A process as set forth in claim 25 wherein said contacting is conducted at a pressure of from about 50 psig to about 1500 psig.
43. A process as set forth in claim 1 wherein the metal exhibits a removal efficiency that is at least about 90%.
44. A process as set forth in claim 1 wherein the metal exhibits a removal efficiency that is at least about 98%.
45. A process as set forth in claim 1 wherein the metal exhibits a removal efficiency that is at least about 99.9%.
46. A process as set forth in claim 1 wherein the gas stream has a moisture content of from about 300 ppm to about 800 ppm.
47. A process as set forth in claim 1 wherein the reduced hydrogen chloride content is no more than about 5% (v/v) of the initial hydrogen chloride content.
48. A process as set forth in claim 1 wherein the reduced hydrogen chloride content is no more than about 0.5% (v/v) of the initial hydrogen chloride content.
49. A process as set forth in claim 1 wherein no more than about 0.5% (v/v) of the silicon tetrafluoride is removed from the gas stream during said contacting.
50. A process as set forth in claim 1 wherein said contacting is conducted at a temperature of from about 45° C. to about 70° C.
51. A process as set forth in claim 1 wherein the surface area of the metal source is at least about 200 ft 2 /ft 3 .
52. A process as set forth in claim 1 wherein the surface area of the metal source is from about 200 ft 2 /ft 3 to about 400 ft 2 /ft 3 .
53. A process as set forth in claim 1 wherein at least a portion of the metal source is in the form of particles ranging in size of from about 1000 μm to about 4000 μm.
54. A process as set forth in claim 1 wherein the metal source exhibits a porosity of from about 40% to about 70%.
55. A process as set forth in claim 25 wherein said compressing comprises subjecting the gas stream to a first stage of increasing pressure of at least about 200 psig.
56. A process as set forth in claim 25 wherein, prior to said first stage, the gas stream has a moisture content of at least about 800 ppm.
57. A process as set forth in claim 25 wherein said compressing comprises subjecting the gas stream to a second stage of increasing pressure of at least about 1000 psig.
58. A process as set forth in claim 57 wherein, prior to said second stage, the gas stream has a moisture content of from about 300 ppm to about 1700 ppm.
59. A process as set forth in claim 25 wherein the metal exhibits a removal efficiency that is at least about 95%.
60. A process as set forth in claim 25 wherein the metal exhibits a removal efficiency that is at least about 99.9%.
61. A process as set forth in claim 25 wherein the reduced hydrogen chloride content is no more than about 5% (v/v) of the initial hydrogen chloride content.
62. A process as set forth in claim 25 wherein no more than about 0.1% (v/v) of the silicon tetrafluoride is removed from the gas stream during said contacting.
63. A process as set forth in claim 25 wherein the surface area of the metal source is from about 200 ft 2 /ft 3 to about 400 ft 2 /ft 3 .
64. A process as set forth in claim 25 wherein at least a portion of the metal source is in the form of particles ranging in size of from about 1000 μm to about 4000 μm.
65. A process as set forth in claim 25 wherein the metal source exhibits a porosity of from about 40% to about 70%.
66. A process as set forth in claim 25 wherein the gas stream is contacted with a bed comprising the metal source at a space velocity at least about 4 ft/minute.
67. A process as set forth in claim 25 wherein the metal is magnesium and the source of metal is selected from the group consisting of magnesium oxide, magnesium hydroxide, magnesium and combinations thereof.
68. A process as set forth in claim 67 wherein magnesium reacts with hydrogen chloride to produce magnesium chloride.