IP Library › Assignment 031870/0031
Patent Assignment
Reel/Frame 031870/0031

Release of Security Interest

Recorded: 2013-12-26 Pages: 29
Assignor
BANK OF AMERICA, N.A.
Executed: 2013-12-20
Assignees
ENFLEX CORPORATION
600 CLIPPER DRIVE, BELMONT, CALIFORNIA, 94002
SUN EDISON LLC
600 CLIPPER DRIVE, BELMONT, CALIFORNIA, 94002
SOLAICX
7832 N. LEADBETTER ROAD, PORTLAND, OREGON, 97203
SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
501 PEARL DRIVE, ST. PETERS, MISSOURI, 63376
Covered Properties (303)
Method for Controlling Oxygen Content of Silicon Crystals Using a Combination of Cusp Magnetic Field and Crystal and Crucible Rotation Rates
Patent: 5,178,720 →
Application: 07/744,891 →
Removal of Ethylene from Silane Using a Distillation Step After Separation Using a Zeolite Molecular Sieve
Patent: 5,211,931 →
Application: 07/859,146 →
Device for the Magnetic Inductive Heating of Vessels
Patent: 5,260,538 →
Application: 07/865,972 →
Method for Growing Multiple Single Crystals and Apparatus for Use Therein
Patent: 5,288,366 →
Application: 07/873,375 →
Process for the Removal of a Silicon Coating from a Surface
Patent: 5,358,603 →
Application: 07/957,319 →
Silicon Coating Process
Patent: 5,405,658 →
Application: 07/963,661 →
Product Recovery Tube Assembly
Patent: 5,322,670 →
Application: 07/963,814 →
Process for Contaminate Removal and Minority Carrier Llifetime Improvement in Silicon
Patent: 5,272,119 →
Application: 07/971,056 →
Wafer Polishing Apparatus and Method
Patent: 5,377,451 →
Application: 08/021,215 →
Process for Preparing Polysilicon with Diminished Hydrogen Content by Using a Two-Step Heating Process
Patent: 5,326,547 →
Application: 08/053,527 →
Process for the Preparation of Silicon Wafers Having Controlled Distribution of Oxygen Precipitate Nucleation Centers
Patent: 5,401,669 →
Application: 08/062,926 →
Silicon Wafer Having Controlled Precipitation Distribution
Patent: 5,403,406 →
Application: 08/064,013 →
Method for Detecting Sources of Contamination in Silicon Using a Contamination Monitor Wafer
Patent: 5,418,172 →
Application: 08/084,405 →
Method for Growing Silicon Crystal
Patent: 5,408,951 →
Application: 08/095,759 →
Process and Apparatus for Etching Semiconductor Wafers
Patent: 5,340,437 →
Application: 08/133,980 →
Method for Growing Multiple Single Crystals and Apparatus for Use Therein
Patent: 5,373,807 →
Application: 08/148,896 →
Hopper for Use in Charging Semiconductor Souce Material
Patent: 5,488,924 →
Application: 08/163,661 →
Wafer Carrier
Patent: 5,417,767 →
Application: 08/174,046 →
Apparatus for Recharging a Heated Receptacle with Particulate Matter at a Controlled Velocity
Patent: 5,419,462 →
Application: 08/179,410 →
Semiconductor Wafer Polisher and Method
Patent: 5,422,316 →
Application: 08/214,969 →
Semiconductor Wafer Polishing Apparatus and Method
Patent: 5,605,487 →
Application: 08/242,560 →
Method of Rough Polishing Semiconductor Wafers to Reduce Surface Roughness
Patent: 5,571,373 →
Application: 08/245,592 →
Method for Etching a Semiconductor Material Without Altering Flow Pattern Defect Distribution
Patent: 5,573,680 →
Application: 08/283,782 →
Process for Stripping Outer Edge of Besoi Wafers
Patent: 5,668,045 →
Application: 08/346,695 →
Precision Controlled Precipitation of Oxygen in Silicon
Patent: 5,593,494 →
Application: 08/403,301 →
Facility Environmental Control System
Patent: 5,581,478 →
Application: 08/421,629 →
Susceptor and Baffle Therefor
Patent: 5,518,549 →
Application: 08/423,363 →
Method for Controlling Growth of a Silicon Crystal
Patent: 5,653,799 →
Application: 08/459,765 →
A Silicon Single Crystal Having Eliminated Disclocation in Its Neck Crystal
Patent: 5,578,284 →
Application: 08/483,304 →
Apparatus for Rotating a Crucible of a Crystal Pulling Machine
Patent: 5,593,498 →
Application: 08/488,924 →
Surface-Treated Crucibles for Improved Zero Dislocation Performance
Patent: 5,976,247 →
Application: 08/490,465 →
Methods for Improving Zero Dislocation Yield of Single Crystals
Patent: 5,980,629 →
Application: 08/490,473 →
Method for Preparing Molten Silicon Melt from Polycrystalline Silicon Charge
Patent: 5,588,993 →
Application: 08/507,055 →
Method for Tuning Barrel Reactor Purge System
Patent: 5,908,504 →
Application: 08/530,612 →
Non-Distorting Video Camera for Use with a System for Controlling Growth of a Silicon Crystal
Patent: 5,656,078 →
Application: 08/558,609 →
Pre-Thermal Treatment Cleaning Process
Patent: 5,712,198 →
Application: 08/568,997 →
Apparatus for Controlling Nucleation of Oxygen Precipitates in Silicon Crystals
Patent: 5,840,120 →
Application: 08/589,612 →
Method for Preparing Molten Silicon Melt from Polycrystalline Silicon Charge
Patent: 5,814,148 →
Application: 08/595,075 →
System for Controlling Growth of a Silicon Crystal
Patent: 5,665,159 →
Application: 08/620,137 →
Apparatus and Method for Shaping Polishing Pads
Patent: 5,840,202 →
Application: 08/639,185 →
Method and Apparatus for Aiming a Barrel Reactor Nozzle
Patent: 5,843,234 →
Application: 08/644,181 →
Automated Wafer Lapping System
Patent: 5,679,055 →
Application: 08/653,666 →
Process for Eliminating Dislocations in the Neck of a Silicon Single Crystal
Patent: 5,628,823 →
Application: 08/675,550 →
Cooling System and Method for Epitaxial Barrel Reactor
Patent: 5,849,076 →
Application: 08/686,565 →
Polysilicon Particle Classifying Apparatus
Patent: 5,791,493 →
Application: 08/686,570 →
Method and Apparatus for Controlling Flatness of Polished Semiconductor Wafer
Patent: 5,787,595 →
Application: 08/689,432 →
Process for Controlling Thermal History of Czochralski-Grown Silicon
Patent: 5,779,791 →
Application: 08/694,157 →
Cutting Machine
Patent: 5,827,113 →
Application: 08/710,655 →
Sio Probe for Real-Time Monitoring and Control of Oxygen During Czochralski Growth of Single Crystal Silicon
Patent: 5,795,381 →
Application: 08/711,085 →
A Method for Rotating a Crucible of a Crystal Pulling Machine
Patent: 5,766,341 →
Application: 08/725,861 →
Process for Controlling the Oxygen Content in Silicon Wafers Heavily Doped with Antimony or Arsenic
Patent: 5,904,768 →
Application: 08/732,527 →
Gettering Agent
Patent: 5,855,859 →
Application: 08/739,550 →
Facility Environmental Control System
Patent: 5,793,646 →
Application: 08/759,017 →
Polishing Block Heater
Patent: 5,770,522 →
Application: 08/764,458 →
Ideal Oxygen Precipitating Silicon Wafers and Oxygen Out-Diffusion-Less Process Therefor
Patent: 5,994,761 →
Application: 08/806,436 →
Edge Stripped Besoi Wafer
Patent: 5,834,812 →
Application: 08/820,593 →
Apparatus for Cleaning Semiconductor Wafers
Patent: 5,816,274 →
Application: 08/843,632 →
Secondary Edge Reflector for Horizontal Reactor
Patent: 5,792,273 →
Application: 08/863,960 →
Method and Apparatus for Cutting an Ingot
Patent: 6,006,738 →
Application: 08/895,388 →
Method and System for Controlling Growth of a Silicon Crystal
Patent: 5,846,318 →
Application: 08/896,177 →
Heat Shield Assembly and Method of Growing Vacancy Rich Single Crystal Silicon
Patent: 5,942,032 →
Application: 08/904,943 →
Non-Dash Neck Method for Single Crystal Silicon Growth
Patent: 5,885,344 →
Application: 08/907,795 →
Process for the Preparation of Silicon Wafers Having a Controlled Distribution of Oxygen Precipitate Nucleation Centers
Patent: 5,882,989 →
Application: 08/934,946 →
Method and System for Controlling Growth of a Silicon Crystal
Patent: 5,882,402 →
Application: 08/939,802 →
Heat Shield for Crystal Puller
Patent: 5,922,127 →
Application: 08/940,166 →
Wafer Demount Apparatus
Patent: 5,865,670 →
Application: 08/941,777 →
Radiant Polishing Block Heater
Patent: 5,906,533 →
Application: 08/950,842 →
Process for Preparing a Silicon Melt from a Polysilicon Charge
Patent: 5,919,303 →
Application: 08/951,264 →
Closed Loop Process for Producing Polycrystalline Silicon and Fumed Silica
Patent: 5,910,295 →
Application: 08/966,798 →
Apparatus for Cleaning Semiconductor Wafers
Patent: 5,839,460 →
Application: 08/970,129 →
Post-Lapping Cleaning Process for Silicon Wafers
Patent: 5,837,662 →
Application: 08/990,123 →
Method and Apparatus for Washing Silicon Ingot with Water to Remove Particulate Matter
Patent: 6,006,736 →
Application: 09/000,061 →
Crystal Growing Apparatus with Melt-Doping Facility
Patent: 6,019,838 →
Application: 09/002,592 →
Situ Wafer Cleaning Process
Patent: 5,990,014 →
Application: 09/003,986 →
Crucible and Method of Preparation Thereof
Patent: 5,913,975 →
Application: 09/017,942 →
Ideal Oxygen Precipitating Silicon Wafers and Oxygen Out-Diffusion- Less Process Therefor
Patent: 6,180,220 →
Application: 09/030,110 →
Low Defect Density, Ideal Oxygen Precipitating Silicon
Patent: 6,190,631 →
Application: 09/057,800 →
Low Defect Density Self-Interstitial Dominated Silicon
Patent: 6,254,672 →
Application: 09/057,801 →
Low Defect Density Vacancy Dominated Silicon
Patent: 5,919,302 →
Application: 09/057,851 →
Low Defect Density Silicon
Patent: 6,287,380 →
Application: 09/057,907 →
Injector for Reactor
Patent: 5,891,250 →
Application: 09/072,564 →
Process for the Removal of Copper and Other Metallic Impurities from Silicon
Patent: 6,482,269 →
Application: 09/082,906 →
Electrical Resistance Heater for Crystal Growing Apparatus
Patent: 6,093,913 →
Application: 09/092,391 →
Collector for an Automated on-Line Bath Analysis System
Patent: 6,210,640 →
Application: 09/093,520 →
Process and Appratus for Preparation of Silicon Crystals with Reduced Metal Content
Patent: 6,183,553 →
Application: 09/097,779 →
Susceptor for Barrel Reactor
Patent: 6,129,048 →
Application: 09/107,728 →
Continuous Oxidation Process for Crystal Pulling Apparatus
Patent: 6,039,801 →
Application: 09/167,747 →
Method and System for Controlling Growth of a Silicon Crystal
Patent: 6,171,391 →
Application: 09/172,546 →
Heat Shield for Crystal Puller
Patent: 6,053,974 →
Application: 09/234,144 →
Tungsten Doped Crucible and Method for Preparing Same
Patent: 6,187,089 →
Application: 09/245,238 →
An Epitaxial Silicon Wafer with Intrinsic Gettering
Patent: 6,284,384 →
Application: 09/250,908 →
Heat Shield Assembly for Crystal Puller
Patent: 6,197,111 →
Application: 09/258,478 →
Apparatus for Controlling the Oxygen Content in Silicon Wafers Heavily Doped with Antimony or Arsenic
Patent: 6,214,109 →
Application: 09/268,968 →
Vacancy Dominated, Defect-Free Silicon
Patent: 6,379,642 →
Application: 09/270,366 →
Method for Processing a Semiconductor Wafer
Patent: 6,227,944 →
Application: 09/276,278 →
Method and System of Controlling Taper Growth in a Semiconductor Crystal Growth Process
Patent: 6,241,818 →
Application: 09/287,916 →
Ideal Oxygen Precipitating Silicon Wafers and Oxygen Out-Diffusion-Less Process Therefor
Patent: 6,204,152 →
Application: 09/340,489 →
Process for Preparing Defect Free Silicon Crystals Which Allows for Variability in Process Conditions
Patent: 6,312,516 →
Application: 09/344,036 →
Publication: US 2001/0003268
Process for Growth of Defect Free Silicon Crystals of Arbitrarily Large Diameters
Patent: 6,328,795 →
Application: 09/344,709 →
Publication: US 2001/0008114
Method for the Separation, Regeneration and Refuse of an Exhausted Glycol-Based Slurry
Patent: 6,231,628 →
Application: 09/345,934 →
Process for Fabricating Semiconductor Wafers with External Gettering
Patent: 6,338,805 →
Application: 09/352,980 →
Method of Processing Semiconductor Wafers
Patent: 6,114,245 →
Application: 09/356,616 →
Non-Uniform Minority Carrier Lifetime Distributions in High Performance Silicon Power Devices
Patent: 6,828,690 →
Application: 09/366,850 →
Non-Oxygen Precipitating Czochralski Silicon Wafers
Patent: 6,336,968 →
Application: 09/379,383 →
Process for Preparing an Ideal Oxygen Precipitating Silicon Wafer
Patent: 6,191,010 →
Application: 09/384,669 →
Thermally Annealed Wafers Having Improved Internal Gettering
Patent: 6,361,619 →
Application: 09/385,108 →
Silicon on Insulator Structure from Low Defect Density Single Crystal Silicon
Patent: 6,236,104 →
Application: 09/387,288 →
Method of Processing Semiconductor Wafers to Build in Back Surface Damage
Patent: 6,214,704 →
Application: 09/404,428 →
Thermally Annealed, Low Defect Density Single Crystal Silicon
Patent: 6,416,836 →
Application: 09/416,998 →
Epitaxial Silicon Wafers Substantially Free of Grown - in Defects
Patent: 6,284,039 →
Application: 09/417,610 →
Method of Controlling Growth of a Semiconductor Crystal to Automatically Transition from Taper Growth to Target Diameter Growth
Patent: 6,203,611 →
Application: 09/421,187 →
Method of Determining Performance Characteristics of Polishing Pads
Patent: 6,293,139 →
Application: 09/432,928 →
Method for Revealing Agglomerated Intrinsic Point Defects in Semiconductor Crystals
Patent: 6,638,357 →
Application: 09/475,320 →
Publication: US 2002/0007779
Semiconductor Wafer Manufacturing Process
Patent: 6,376,395 →
Application: 09/481,080 →
Publication: US 2002/0004305
Continuous oxidation process for crystal pulling Apparatus
Patent: 6,315,828 →
Application: 09/489,481 →
Method of Controlling Diameter of a Silicon Crystal in a Locked Seed Lift Growth Process
Patent: 6,776,840 →
Application: 09/502,340 →
Process for producing a silicon melt
Patent: 6,344,083 →
Application: 09/503,566 →
Process for Reducing Surface Variations for Polished Wafer
Patent: 6,479,386 →
Application: 09/505,269 →
Semiconductor Wafer Manufacturing Process
Patent: 6,376,335 →
Application: 09/506,105 →
Method for Wafer Processing
Patent: 6,514,423 →
Application: 09/507,811 →
Silicon wafering process flow
Patent: 6,294,469 →
Application: 09/512,111 →
Barium doping of molten silicon for use in crystal growing process
Patent: 6,319,313 →
Application: 09/521,288 →
Strontium doping of molten silicon for use in crystal growing process
Patent: 6,350,312 →
Application: 09/521,525 →
Modified Susceptor for Use in Chemical Vapor Deposition Process
Patent: 6,444,027 →
Application: 09/566,890 →
Process for Preparing Single Crystal Silicon Having Uniform Thermal History
Patent: 6,458,202 →
Application: 09/596,493 →
Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
Patent: 6,339,016 →
Application: 09/607,389 →
Method and Apparatus for Forming a Silicon Wafer with a Denuded Zone
Patent: 6,599,815 →
Application: 09/607,391 →
Non-Contaminating Gas-Tight Valve for Semiconductor Applications
Patent: 6,435,474 →
Application: 09/608,304 →
Ideal Oxygen Precipitating Epitaxial Silicon Wafers and Oxygen Out-Diffusion-Less Process Therefor
Patent: 6,306,733 →
Application: 09/626,635 →
Method and Apparatus for a Wafer Carrier Having an Insert
Patent: 6,454,635 →
Application: 09/633,958 →
Method for Producing Czochralski Silicon Free of Agglomerated Self-Interstitial Defects
Patent: 6,635,587 →
Application: 09/661,821 →
Process for Detecting Agglomerated Intrinsic Point Defects by Metal Decoration
Patent: 6,391,662 →
Application: 09/661,822 →
Radio frequency identification system and method for tracking silicon wafers
Patent: 6,330,971 →
Application: 09/677,909 →
Method and Apparatus to Place Wafers into and Out of Machine
Patent: 6,398,631 →
Application: 09/681,160 →
Polishing Apparatus, Polishing Head and Method
Patent: 6,712,673 →
Application: 09/682,677 →
Publication: US 2003/0068958
Heat Shield Assembly for Crystal Pulling Apparatus
Patent: 6,482,263 →
Application: 09/684,266 →
Electrical Resistance Heater and Method for Crystal Growing Apparatus
Patent: 6,503,322 →
Application: 09/691,994 →
Ideal Oxygen Precipitating Silicon Wafers and Oxygen Out-Diffusion-Less Process Therefor
Patent: 6,586,068 →
Application: 09/704,893 →
A Process for the Preparation of an Ideal Oxygen Precipitating Silicon Wafer Having an Asymmetrical Vacancy Concentration Profile Capable of Forming an Enhanced Denuded Zone
Patent: 6,579,779 →
Application: 09/704,900 →
Low Defect Density, Ideal Oxygen Precipitating Silicon
Patent: 6,555,194 →
Application: 09/705,092 →
Method for Preparing Molten Silicon Melt from Polycrystalline Silicon Charge
Patent: 6,454,851 →
Application: 09/711,198 →
Defect Classification Using Scattered Light Intensities
Patent: 6,515,742 →
Application: 09/723,847 →
Silicon on insulator structure having a low defect density handle wafer and process for the preparation thereof
Patent: 6,342,725 →
Application: 09/737,715 →
Publication: US 2001/0030348
Semiconductor Wafer Holder
Patent: 6,497,403 →
Application: 09/751,897 →
Publication: US 2002/0084566
Epitaxial Silicon Wafer Free from Autodoping and Backside Halo and a Method and Apparatus for the Preparation Thereof
Patent: 6,596,095 →
Application: 09/752,222 →
Publication: US 2001/0037761
Carrier for Cleaning Silicon Wafers
Patent: 6,520,191 →
Application: 09/807,907 →
Crystal Puller and Method for Growing Monocrystalline Silicon Ingots
Patent: 6,447,601 →
Application: 09/811,982 →
Heat Shield Assembly for Crystal Puller
Patent: 6,579,362 →
Application: 09/815,508 →
Publication: US 2002/0134302
Low Defect Density, Self-Interstitial Dominated Silicon
Patent: 6,409,826 →
Application: 09/816,015 →
Publication: US 2001/0025597
Low Defect Density Silicon and a Process for Producing Low Defect Density Silicon Wherein V/G0 Is Controlled by Controlling Heat Transfer at the Melt/Solid Interface
Patent: 6,409,827 →
Application: 09/833,777 →
Publication: US 2001/0020437
Process for Growing Silicon Crystals Which Allows for Variability in Process Conditions While Suppressing the Formation of Agglomerated Intrinsic Point Defects
Patent: 6,500,255 →
Application: 09/853,232 →
Publication: US 2001/0027743
Epitaxial Silicon Wafer with Intrinsic Gettering and a Method for the Preparation Thereof
Patent: 6,537,655 →
Application: 09/859,094 →
Publication: US 2001/0032581
Barium Doping of Molten Silicon for Use in Crystal Growing Process
Patent: 6,461,427 →
Application: 09/859,826 →
Publication: US 2001/0032580
Process for Preparing Low Defect Density Silicon Using High Growth Rates
Patent: 6,689,209 →
Application: 09/871,255 →
Publication: US 2002/0053315
An Epitaxial Wafer Substantially Free of Grown-in Defects
Patent: 6,565,649 →
Application: 09/874,487 →
Publication: US 2001/0039916
Crystal Puller and Method for Growing Monocrystalline Silicon Ingots
Patent: 6,663,709 →
Application: 09/892,002 →
Publication: US 2002/0195045
Method and Apparatus for Processing a Semiconductor Wafer Using Novel Final Polishing Method
Patent: 6,709,981 →
Application: 09/928,559 →
Publication: US 2002/0052064
Ideal Oxygen Precipitating Epitaxial Silicon Wafers and Oxygen Out-Diffusion-Less Process Therefor
Patent: 6,537,368 →
Application: 09/928,739 →
Publication: US 2002/0026893
Process for the Preparation of Non-Oxygen Precipitating Czochralski Silicon Wafers
Patent: 6,432,197 →
Application: 09/929,585 →
Publication: US 2002/0000185
Process for Preparing a Silicon Melt
Patent: 6,652,645 →
Application: 09/943,600 →
Publication: US 2002/0020339
Method for the Production of Low Defect Density Silicon
Patent: 6,858,307 →
Application: 09/972,608 →
Publication: US 2002/0056410
Vacancy, Dominated, Defect-Free Silicon
Patent: 6,840,997 →
Application: 10/000,545 →
Publication: US 2002/0078880
Method for Controlling Growth of a Silicon Crystal to Minimize Growth Rate and Diameter Deviations
Patent: 6,726,764 →
Application: 10/008,812 →
Publication: US 2002/0043206
Process for Reclaiming Semiconductor Wafers and Reclaimed Wafers
Patent: 7,008,874 →
Application: 10/022,967 →
Publication: US 2002/0086539
Granular Semiconductor Material Transport System and Process
Patent: 6,609,870 →
Application: 10/035,456 →
Publication: US 2003/0077128
Process for Growing Defect-Free Silicon Wherein the Grown Silicon Is Cooled in a Separate Chamber
Patent: 6,562,123 →
Application: 10/035,540 →
Publication: US 2002/0092460
Process for Producing a Silicon Melt
Patent: 6,749,683 →
Application: 10/036,875 →
Publication: US 2002/0083887
SOI structure having a device layer which is vacancy dominated and substantially free fo agglomerated vacancy type defects
Patent: 6,849,901 →
Application: 10/038,084 →
Publication: US 2002/0113265
Single Crystal Silicon Having Improved Gate Oxide Integrity
Patent: 6,986,925 →
Application: 10/039,196 →
Publication: US 2002/0121238
Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults
Patent: 6,846,539 →
Application: 10/054,629 →
Publication: US 2002/0100410
Process for Producing Thermally Annealed Wafers Having Improved Internal Gettering
Patent: 6,686,260 →
Application: 10/067,070 →
Publication: US 2002/0170631
Thermal Annealing Process for Producing Low Defect Density Single Crystal Silicon
Patent: 6,743,289 →
Application: 10/073,506 →
Publication: US 2002/0083889
Thermal Annealing Process for Producing Silicon Wafers with Improved Surface Characteristics
Patent: 6,743,495 →
Application: 10/113,378 →
Publication: US 2002/0174828
Control of Oxygen Precipitate Formation in High Resistivity Cz Silicon
Patent: 6,897,084 →
Application: 10/120,714 →
Publication: US 2003/0054641
Low Defect Density Regions of Self-Interstitial Dominated Silicon
Patent: 6,605,150 →
Application: 10/135,174 →
Publication: US 2002/0139294
Low Defect Density Epitaxial Wafer and a Process for the Preparation Thereof
Patent: 6,632,278 →
Application: 10/135,597 →
Publication: US 2002/0170485
Silicon on Insulator Struture Having an Epitaxial Layer and Intrinsic Gettering
Patent: 6,930,375 →
Application: 10/177,444 →
Publication: US 2003/0008435
Controlled Neck Growth Process for Single Crystal Silicon
Patent: 6,869,477 →
Application: 10/204,654 →
Publication: US 2003/0209186
Method of eliminating near-surface bubbles in quartz crucibles
Application: 10/210,933 →
Publication: US 2003/0024467
Non-Oxygen Precipitating Czochralski Silicon Wafers
Patent: 6,709,511 →
Application: 10/217,703 →
Publication: US 2002/0189528
Modified Susceptor for Use in Chemical Vapor Deposition Process
Patent: 6,652,650 →
Application: 10/229,415 →
Publication: US 2003/0041799
Method of Polishing Wafers
Patent: 6,878,302 →
Application: 10/239,669 →
Analytical Method to Measure Nitrogen Concentration in Single Crystal Silicon
Patent: 6,803,576 →
Application: 10/252,479 →
Publication: US 2003/0068826
Crystal Puller for Growing Monocrystalline Silicon Ingots
Patent: 6,554,898 →
Application: 10/254,945 →
Publication: US 2003/0024473
A Single Crystal Silicon Ingot Having a High Arsenic Concentration
Patent: 7,132,091 →
Application: 10/256,759 →
Publication: US 2003/0061985
Process for Growing a Silicon Crystal Segment Substantially Free from Agglomerated Intrinsic Point Defects Which Allows for Variability in the Process Conditions
Patent: 6,652,646 →
Application: 10/260,239 →
Publication: US 2003/0116081
Seed Crystals for Pulling Single Crystal Silicon
Patent: 6,866,713 →
Application: 10/281,632 →
Publication: US 2003/0079673
Wire Saw and Process for Slicing Multiple Semiconductor Ingots
Patent: 6,941,940 →
Application: 10/296,919 →
Ideal Oxygen Precipitating Silicon Wafers with Nitrogen/Carbon Stabilized Oxygen Precipitate Nucleation Centers and Process for Making the Same
Patent: 6,808,781 →
Application: 10/328,481 →
Publication: US 2003/0136961
Process for Producing Low Defect Density, Ideal Oxygen Precipitating Silicon
Patent: 6,896,728 →
Application: 10/373,899 →
Publication: US 2004/0025782
Nitrogen-Doped Silicon Substantially Free of Oxidation Induced Stacking Faults
Patent: 7,182,809 →
Application: 10/380,806 →
Publication: US 2004/0009111
Epitaxial Silicon Wafer with Intrinsic Gettering and a Method for the Preparation Thereof
Patent: 6,958,092 →
Application: 10/400,594 →
Publication: US 2005/0098092
Ideal Oxygen Precipitating Silicon Wafers and Oxygen Out-Diffusion-Less Process Therefor
Patent: 6,849,119 →
Application: 10/430,798 →
Publication: US 2003/0196586
Semiconductor Wafer, Polishing Apparatus and Method
Patent: 7,137,874 →
Application: 10/432,513 →
Process for Cooling a Silicon Ingot Having a Vacancy Dominated Region to Produce Defect Free Silicon
Patent: 6,913,647 →
Application: 10/437,141 →
Publication: US 2004/0003770
Single Crystal Silicon Wafer Having an Epitaxial Layer Substantially Free from Grown-in Defects
Patent: 7,097,718 →
Application: 10/441,413 →
Publication: US 2003/0205191
Wafer Carrier
Patent: 7,008,308 →
Application: 10/442,900 →
Publication: US 2004/0235402
Process for the Preparation of an Ideal Oxygen Precipitating Silicon Wafer Capable of Forming an Enhanced Denuded Zone
Patent: 6,713,370 →
Application: 10/460,901 →
Publication: US 2003/0221609
Fluid Sealing System for a Crystal Puller
Patent: 6,942,733 →
Application: 10/465,528 →
Publication: US 2004/0255847
Method for Treating an Exhausted Glycol-Based Slurry
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System for Continuous Growing of Monocrystalline Silicon
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Wafer Clamping Device for a Double Side Grinder
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Process for Preparing a Stabilized Ideal Oxygen Precipitating Silicon Wafer
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Method to Monitor and Control the Crystal Cooling or Quenching Rate by Measuring Crystal Surface Temperature
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Process for Preparing Single Crystal Silicon Using Crucible Rotation to Control Temperature Gradient
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Crystal Puller and Method for Growing a Monocrystalline Ingot
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System for Continuous Growing of Monocrystalline Silicon
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Process for Metallic Contamination Reduction in Silicon Wafers
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Partially Devitrified Crucible
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High Purity Silicon Carbide Structures
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Process for Making Non-Uniform Minority Carrier Lifetime Distribution in High Performance Silicon Power Devices
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Systems and Methods for Measuring and Reducing Dust in Granular Material
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Process for Making Silicon Wafers with Stabilized Oxygen Precipitate Nucleation Centers
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Publication: US 2005/0048247
High purity granular silicon and method of manufacturing the same
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Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults
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Controlling Melt-Solid Interface Shape of a Growing Silicon Crystal Using a Variable Magnetic Field
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Electromagnetic Pumping of Liquid Silicon in a Crystal Growing Process
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Semiconductor Wafer Boat for a Vertical Furnace
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Method for the Production of Low Defect Density Silicon
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Low Defect Density, Ideal Oxygen Precipitating Silicon
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Method for Controlling of Thermal Donor Formation in High Resistivity Cz Silicon
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Process for Preparing Single Crystal Silicon Having Improved Gate Oxide Integrity
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Publication: US 2005/0160967
Modified Susceptor for Barrel Reactor
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Silicon Wafer Etching Process and Composition
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Melter Assembly and Method for Charging a Crystal Forming Apparatus with Molten Source Material
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Melter Assembly and Method for Charging a Crystal Forming Apparatus with Molten Source Material
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Melter Assembly and Method for Charging a Crystal Forming Apparatus with Molten Source Material
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Process for Producing Silicon on Insulator Structure Having Intrinsic Gettering by Ion Implantation
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Arsenic and Phosphorus Doped Silicon Wafer Substrates Having Intrinsic Gettering
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Polishing Slurry Composition and Method of Using the Same
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Silicon Structures with Improved Resistance to Radiation Events
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High Resistivity Silicon Structure and a Process for the Preparation Thereof
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Method of Polishing a Semiconductor Wafer
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Wafer Support and Method of Making Wafer Support
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Double Side Wafer Grinder and Methods for Assessing Workpiece Nanotopology
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Double Side Wafer Grinder and Methods for Assessing Workpiece Nanotopology
Patent: 7,601,049 →
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Publication: US 2007/0179660
Wire Saw Ingot Slicing System and Method with Ingot Preheating, Web Preheating, Slurry Temperature Control and/or Slurry Flow Rate Control
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Publication: US 2007/0178807
Nitrogen-Doped Silicon Substantially Free of Oxidation Induced Stacking Faults
Patent: 7,404,856 →
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Publication: US 2007/0169683
Semiconductor wafer with high thermal conductivity
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Publication: US 2007/0176238
Processes for the Purification of Trichlorosilane and Silicon Tetrachloride
Patent: 7,879,198 →
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Publication: US 2008/0314728
Controlling Agglomerated Point Defect and Oxygen Cluster Formation Induced by the Lateral Surface of a Silicon Single Crystal During Cz Growth
Patent: 8,216,362 →
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Publication: US 2007/0266929
Silicon Material with Controlled Agglomerated Point Defects and Oxygen Clusters Induced by the Lateral Surface
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Process for Forming Low Defect Density, Ideal Oxygen Precipitating Silicon
Patent: 7,442,253 →
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Controlling Melt-Solid Interface Shape of a Growing Silicon Crystal Using a Variable Magnetic Field
Patent: 7,611,580 →
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Method for Purifying Silicon Carbide Coated Structures
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Publication: US 2007/0221609
Non-Uniform Minority Carrier Lifetime Distributions in High Performance Silicon Power Devices
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Wafer Platform
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Publication: US 2008/0041798
Dressing a Wafer Polishing Pad
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Publication: US 2008/0009231
Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
Application: 11/771,667 →
Publication: US 2009/0004426
Diffusion Control in Heavily Doped Substrates
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Publication: US 2009/0004458
Reduction of Air Pockets in Silicon Crystals by Avoiding the Introduction of Nearly-Insoluble Gases into the Melt
Application: 11/939,393 →
Publication: US 2009/0120353
Methods for Producing Smooth Wafers
Patent: 8,058,173 →
Application: 11/960,236 →
Publication: US 2008/0160788
Susceptor with Support Bosses
Application: 11/965,459 →
Publication: US 2009/0165721
Susceptor for Improving Throughput and Reducing Wafer Damage
Application: 11/965,506 →
Publication: US 2008/0314319
Epitaxial Barrel Susceptor Having Improved Thickness Uniformity
Patent: 8,404,049 →
Application: 11/965,521 →
Publication: US 2009/0165719
Semiconductor Wafer Carrier Blade
Patent: 7,878,562 →
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Publication: US 2009/0169346
Nanotopography Control and Optimization Using Feedback from Warp Data
Patent: 7,930,058 →
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Publication: US 2008/0166948
Silicon Wafer Etching Compositions
Patent: 7,938,982 →
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Publication: US 2008/0099717
Solar Panel and Frame and Related Methods
Patent: 7,797,889 →
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Publication: US 2008/0172955
Method and Device for Feeding Arsenic Dopant into a Silicon Crystal Growing Apparatus
Patent: 7,922,817 →
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Publication: US 2009/0266294
Semiconductor Wafer Polishing Apparatus and Method of Polishing
Patent: 8,192,248 →
Application: 12/130,190 →
Publication: US 2009/0298399
Low Thermal Mass Semiconductor Wafer Support
Patent: 8,042,697 →
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Publication: US 2009/0321372
Method and Device for Continuously Measuring Silicon Island Elevation
Patent: 7,573,587 →
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Method for Treatment of a Gas Stream Containing Silicon Tetrafluoride and Hydrogen Chloride
Patent: 7,691,351 →
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Publication: US 2009/0092530
Processes for Purification of Silicon Tetrafluoride
Patent: 7,943,108 →
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Publication: US 2009/0092534
Wafer Holder for Supporting a Semiconductor Wafer During a Thermal Treatment Process
Patent: 8,186,661 →
Application: 12/211,516 →
Publication: US 2010/0065696
Support for a Semiconductor Wafer in a High Temperature Environment
Application: 12/253,664 →
Publication: US 2010/0098519
Arsenic and Phosphorus Doped Silicon Wafer Substrates Having Intrinsic Gettering
Patent: 8,026,145 →
Application: 12/347,336 →
Publication: US 2009/0130824
System and Method for Dressing a Wafer Polishing Pad
Patent: 7,846,007 →
Application: 12/351,290 →
Publication: US 2009/0176441
Carbon Nanotube Reinforced Wiresaw Beam Used in Wiresaw Slicing of Ingots into Wafers
Application: 12/367,058 →
Publication: US 2009/0199836
Counterweighted Active Tracking Solar Panel Rack
Patent: 8,274,028 →
Application: 12/395,231 →
Publication: US 2009/0223315
Edge Etching Apparatus for Etching the Edge of a Silicon Wafer
Application: 12/415,274 →
Publication: US 2009/0242126
Methods for Etching the Edge of a Silicon Wafer
Patent: 8,309,464 →
Application: 12/415,551 →
Publication: US 2009/0247055
Edge Etched Silicon Wafers
Patent: 8,192,822 →
Application: 12/415,555 →
Publication: US 2009/0246444
Methods for Preparing a Semiconductor Structure for Use in Backside Illumination Applications
Patent: 8,080,482 →
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Publication: US 2009/0233428
An Epitaxial Wafer Having a Heavily Doped Substrate
Application: 12/486,569 →
Publication: US 2009/0252974
Methods for Increasing Polycrystalline Silicon Reactor Productivity by Recycle of Silicon Fines
Application: 12/492,706 →
Publication: US 2009/0324819
Controlling a Melt-Solid Interface Shape of a Growing Silicon Crystal Using an Unbalanced Magnetic Field and Iso-Rotation
Patent: 8,398,765 →
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Publication: US 2009/0320743
Fluidized Bed Reactor Systems
Patent: 8,906,313 →
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Publication: US 2009/0324479
Generating a Pumping Force in a Silicon Melt by Applying a Time-Varying Magnetic Field
Patent: 8,551,247 →
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Publication: US 2010/0031870
Directional Solidification Furnace for Reducing Melt Contamination and Reducing Wafer Contamination
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Processes for Preparing a Catalyst
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Publication: US 2010/0009843
Catalysts Useful in the Purification of Silicon Tetrafluoride
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Publication: US 2010/0009844
Methods for Preparing a Melt of Silicon Powder for Silicon Crystal Growth
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Publication: US 2010/0107966
Method for Processing a Silicon-on-Insulator Structure
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Publication: US 2010/0130021
Method for Feeding Arsenic Dopant into a Silicon Crystal Growing Apparatus
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Publication: US 2010/0132829
Method for Assessing Workpiece Nanotopology Using a Double Side Wafer Grinder
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Processes for Producing Silicon Tetrafluoride from Fluorosilicates in a Fluidized Bed Reactor
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Publication: US 2010/0150808
Systems for Producing Silicon Tetrafluoride from Fluorosilicates in a Fluidized Bed Reactor
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Methods For Pulling A Multicrystalline Silicon Ingot From A Silicon Melt
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Pulling Assemblies For Pulling A Multicrystalline Silicon Ingot From A Silicon Melt
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Methods to Recover and Purify Silicon Particles from Saw Kerf
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System for continuous growing of monocrystalline silicon
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Systems for Weighing a Pulled Object
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Methods for Weighing a Pulled Object Having a Changing Weight
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Systems for Weighing a Pulled Object Having a Changing Weight
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Method for Treatment of a Gas Stream Containing Silicon Tetrafluoride and Hydrogen Chloride
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Coated Crucibles and Methods for Applying a Coating to a Crucible
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Coating Compositions
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Method and System for Processing Abrasive Slurry
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Methods of Making Wafer Supports
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Methods of Assembling Solar Energy Collecting Modules
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Methods and Systems for Adjusting Operation of a Wafer Grinder Using Feedback from Warp Data
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Related Assignments (7)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Agreement Oct 1, 2012
From: NVT, LLC; SUN EDISON LLC; SOLAICX, INC.; MEMC ELECTRONIC MATERIALS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 029057/0810 →
Release of Security Interest Dec 26, 2013
From: GOLDMAN SACHS BANK USA
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0092 →
Security Agreement Jan 30, 2014
From: SUNEDISON, INC.; SOLAICX; SUN EDISON, LLC; NVT, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 032177/0359 →
Release of Security Interest Mar 3, 2014
From: DEUTSCHE BANK AG NEW YORK BRANCH
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC.
Reel/Frame 032382/0724 →
Release of Security Interest to Reel/Frame: 012280/0161 Mar 17, 2014
From: CITICORP USA, INC.
To: MEMC ELECTRONIC MATERIALS, INC. (NOW KNOWN AS SUNEDISON, INC.); MEMC PASADENA, INC.; PLASMASIL, L.L.C.; SIBOND, L.L.C.
Reel/Frame 032458/0794 →
Assignment of Assignor's Interest May 27, 2014
From: MEMC ELECTRONIC MATERIALS, INC.
To: SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H)
Reel/Frame 033023/0430 →
Notice of License Agreement Jun 6, 2014
From: SUNEDISON SEMICONDUCTOR LIMITED
To: SUNEDISON SEMICONDUCTOR TECHNOLOGY PTE. LTD.
Reel/Frame 033099/0001 →