Patent Assignment
Reel/Frame 033023/0430
Assignment of Assignor's Interest
Recorded: 2014-05-27
Pages: 35
Assignor
MEMC ELECTRONIC MATERIALS, INC.
Executed: 2014-05-23
Assignee
SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H)
9 BATTERY ROAD, #15-01 STRAITS TRADING BUILDING, SINGAPORE, 049910, SINGAPORE
Covered Properties
(274)
Semiconductor Wafer Polishing Apparatus and Method
Patent:
5,605,487 →
Application:
08/242,560 →
Method of Rough Polishing Semiconductor Wafers to Reduce Surface Roughness
Patent:
5,571,373 →
Application:
08/245,592 →
Method for Etching a Semiconductor Material Without Altering Flow Pattern Defect Distribution
Patent:
5,573,680 →
Application:
08/283,782 →
Precision Controlled Precipitation of Oxygen in Silicon
Patent:
5,593,494 →
Application:
08/403,301 →
Susceptor and Baffle Therefor
Patent:
5,518,549 →
Application:
08/423,363 →
Method for Controlling Growth of a Silicon Crystal
Patent:
5,653,799 →
Application:
08/459,765 →
A Silicon Single Crystal Having Eliminated Disclocation in Its Neck Crystal
Patent:
5,578,284 →
Application:
08/483,304 →
Apparatus for Rotating a Crucible of a Crystal Pulling Machine
Patent:
5,593,498 →
Application:
08/488,924 →
Surface-Treated Crucibles for Improved Zero Dislocation Performance
Patent:
5,976,247 →
Application:
08/490,465 →
Methods for Improving Zero Dislocation Yield of Single Crystals
Patent:
5,980,629 →
Application:
08/490,473 →
Method for Preparing Molten Silicon Melt from Polycrystalline Silicon Charge
Patent:
5,588,993 →
Application:
08/507,055 →
Method for Tuning Barrel Reactor Purge System
Patent:
5,908,504 →
Application:
08/530,612 →
Non-Distorting Video Camera for Use with a System for Controlling Growth of a Silicon Crystal
Patent:
5,656,078 →
Application:
08/558,609 →
Pre-Thermal Treatment Cleaning Process
Patent:
5,712,198 →
Application:
08/568,997 →
Apparatus for Controlling Nucleation of Oxygen Precipitates in Silicon Crystals
Patent:
5,840,120 →
Application:
08/589,612 →
Method for Preparing Molten Silicon Melt from Polycrystalline Silicon Charge
Patent:
5,814,148 →
Application:
08/595,075 →
System for Controlling Growth of a Silicon Crystal
Patent:
5,665,159 →
Application:
08/620,137 →
Apparatus and Method for Shaping Polishing Pads
Patent:
5,840,202 →
Application:
08/639,185 →
Method and Apparatus for Aiming a Barrel Reactor Nozzle
Patent:
5,843,234 →
Application:
08/644,181 →
Automated Wafer Lapping System
Patent:
5,679,055 →
Application:
08/653,666 →
Process for Eliminating Dislocations in the Neck of a Silicon Single Crystal
Patent:
5,628,823 →
Application:
08/675,550 →
Cooling System and Method for Epitaxial Barrel Reactor
Patent:
5,849,076 →
Application:
08/686,565 →
Polysilicon Particle Classifying Apparatus
Patent:
5,791,493 →
Application:
08/686,570 →
Method and Apparatus for Controlling Flatness of Polished Semiconductor Wafer
Patent:
5,787,595 →
Application:
08/689,432 →
Process for Controlling Thermal History of Czochralski-Grown Silicon
Patent:
5,779,791 →
Application:
08/694,157 →
Cutting Machine
Patent:
5,827,113 →
Application:
08/710,655 →
Sio Probe for Real-Time Monitoring and Control of Oxygen During Czochralski Growth of Single Crystal Silicon
Patent:
5,795,381 →
Application:
08/711,085 →
A Method for Rotating a Crucible of a Crystal Pulling Machine
Patent:
5,766,341 →
Application:
08/725,861 →
Process for Controlling the Oxygen Content in Silicon Wafers Heavily Doped with Antimony or Arsenic
Patent:
5,904,768 →
Application:
08/732,527 →
Gettering Agent
Patent:
5,855,859 →
Application:
08/739,550 →
Polishing Block Heater
Patent:
5,770,522 →
Application:
08/764,458 →
Apparatus for Cleaning Semiconductor Wafers
Patent:
5,816,274 →
Application:
08/843,632 →
Secondary Edge Reflector for Horizontal Reactor
Patent:
5,792,273 →
Application:
08/863,960 →
Method and Apparatus for Cutting an Ingot
Patent:
6,006,738 →
Application:
08/895,388 →
Method and System for Controlling Growth of a Silicon Crystal
Patent:
5,846,318 →
Application:
08/896,177 →
Heat Shield Assembly and Method of Growing Vacancy Rich Single Crystal Silicon
Patent:
5,942,032 →
Application:
08/904,943 →
Non-Dash Neck Method for Single Crystal Silicon Growth
Patent:
5,885,344 →
Application:
08/907,795 →
Process for the Preparation of Silicon Wafers Having a Controlled Distribution of Oxygen Precipitate Nucleation Centers
Patent:
5,882,989 →
Application:
08/934,946 →
Method and System for Controlling Growth of a Silicon Crystal
Patent:
5,882,402 →
Application:
08/939,802 →
Heat Shield for Crystal Puller
Patent:
5,922,127 →
Application:
08/940,166 →
Wafer Demount Apparatus
Patent:
5,865,670 →
Application:
08/941,777 →
Radiant Polishing Block Heater
Patent:
5,906,533 →
Application:
08/950,842 →
Apparatus for Cleaning Semiconductor Wafers
Patent:
5,839,460 →
Application:
08/970,129 →
Post-Lapping Cleaning Process for Silicon Wafers
Patent:
5,837,662 →
Application:
08/990,123 →
Method and Apparatus for Washing Silicon Ingot with Water to Remove Particulate Matter
Patent:
6,006,736 →
Application:
09/000,061 →
Crystal Growing Apparatus with Melt-Doping Facility
Patent:
6,019,838 →
Application:
09/002,592 →
Situ Wafer Cleaning Process
Patent:
5,990,014 →
Application:
09/003,986 →
Crucible and Method of Preparation Thereof
Patent:
5,913,975 →
Application:
09/017,942 →
Ideal Oxygen Precipitating Silicon Wafers and Oxygen Out-Diffusion- Less Process Therefor
Patent:
6,180,220 →
Application:
09/030,110 →
Low Defect Density, Ideal Oxygen Precipitating Silicon
Patent:
6,190,631 →
Application:
09/057,800 →
Low Defect Density Self-Interstitial Dominated Silicon
Patent:
6,254,672 →
Application:
09/057,801 →
Low Defect Density Vacancy Dominated Silicon
Patent:
5,919,302 →
Application:
09/057,851 →
Low Defect Density Silicon
Patent:
6,287,380 →
Application:
09/057,907 →
Injector for Reactor
Patent:
5,891,250 →
Application:
09/072,564 →
Process for the Removal of Copper and Other Metallic Impurities from Silicon
Patent:
6,482,269 →
Application:
09/082,906 →
Electrical Resistance Heater for Crystal Growing Apparatus
Patent:
6,093,913 →
Application:
09/092,391 →
Collector for an Automated on-Line Bath Analysis System
Patent:
6,210,640 →
Application:
09/093,520 →
Process and Appratus for Preparation of Silicon Crystals with Reduced Metal Content
Patent:
6,183,553 →
Application:
09/097,779 →
Susceptor for Barrel Reactor
Patent:
6,129,048 →
Application:
09/107,728 →
Continuous Oxidation Process for Crystal Pulling Apparatus
Patent:
6,039,801 →
Application:
09/167,747 →
Method and System for Controlling Growth of a Silicon Crystal
Patent:
6,171,391 →
Application:
09/172,546 →
Heat Shield for Crystal Puller
Patent:
6,053,974 →
Application:
09/234,144 →
Tungsten Doped Crucible and Method for Preparing Same
Patent:
6,187,089 →
Application:
09/245,238 →
An Epitaxial Silicon Wafer with Intrinsic Gettering
Patent:
6,284,384 →
Application:
09/250,908 →
Heat Shield Assembly for Crystal Puller
Patent:
6,197,111 →
Application:
09/258,478 →
Apparatus for Controlling the Oxygen Content in Silicon Wafers Heavily Doped with Antimony or Arsenic
Patent:
6,214,109 →
Application:
09/268,968 →
Vacancy Dominated, Defect-Free Silicon
Patent:
6,379,642 →
Application:
09/270,366 →
Method for Processing a Semiconductor Wafer
Patent:
6,227,944 →
Application:
09/276,278 →
Method and System of Controlling Taper Growth in a Semiconductor Crystal Growth Process
Patent:
6,241,818 →
Application:
09/287,916 →
Process for Preparing Defect Free Silicon Crystals Which Allows for Variability in Process Conditions
Process for Growth of Defect Free Silicon Crystals of Arbitrarily Large Diameters
Process for Fabricating Semiconductor Wafers with External Gettering
Patent:
6,338,805 →
Application:
09/352,980 →
Method of Processing Semiconductor Wafers
Patent:
6,114,245 →
Application:
09/356,616 →
Non-Uniform Minority Carrier Lifetime Distributions in High Performance Silicon Power Devices
Patent:
6,828,690 →
Application:
09/366,850 →
Non-Oxygen Precipitating Czochralski Silicon Wafers
Patent:
6,336,968 →
Application:
09/379,383 →
Process for Preparing an Ideal Oxygen Precipitating Silicon Wafer
Patent:
6,191,010 →
Application:
09/384,669 →
Thermally Annealed Wafers Having Improved Internal Gettering
Patent:
6,361,619 →
Application:
09/385,108 →
Silicon on Insulator Structure from Low Defect Density Single Crystal Silicon
Patent:
6,236,104 →
Application:
09/387,288 →
Method of Processing Semiconductor Wafers to Build in Back Surface Damage
Patent:
6,214,704 →
Application:
09/404,428 →
Thermally Annealed, Low Defect Density Single Crystal Silicon
Patent:
6,416,836 →
Application:
09/416,998 →
Epitaxial Silicon Wafers Substantially Free of Grown - in Defects
Patent:
6,284,039 →
Application:
09/417,610 →
Method of Controlling Growth of a Semiconductor Crystal to Automatically Transition from Taper Growth to Target Diameter Growth
Patent:
6,203,611 →
Application:
09/421,187 →
Method of Determining Performance Characteristics of Polishing Pads
Patent:
6,293,139 →
Application:
09/432,928 →
Method for Revealing Agglomerated Intrinsic Point Defects in Semiconductor Crystals
Semiconductor Wafer Manufacturing Process
Continuous oxidation process for crystal pulling Apparatus
Patent:
6,315,828 →
Application:
09/489,481 →
Method of Controlling Diameter of a Silicon Crystal in a Locked Seed Lift Growth Process
Patent:
6,776,840 →
Application:
09/502,340 →
Process for producing a silicon melt
Patent:
6,344,083 →
Application:
09/503,566 →
Process for Reducing Surface Variations for Polished Wafer
Patent:
6,479,386 →
Application:
09/505,269 →
Semiconductor Wafer Manufacturing Process
Patent:
6,376,335 →
Application:
09/506,105 →
Method for Wafer Processing
Patent:
6,514,423 →
Application:
09/507,811 →
Barium doping of molten silicon for use in crystal growing process
Patent:
6,319,313 →
Application:
09/521,288 →
Strontium doping of molten silicon for use in crystal growing process
Patent:
6,350,312 →
Application:
09/521,525 →
Modified Susceptor for Use in Chemical Vapor Deposition Process
Patent:
6,444,027 →
Application:
09/566,890 →
Process for Preparing Single Crystal Silicon Having Uniform Thermal History
Patent:
6,458,202 →
Application:
09/596,493 →
Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
Patent:
6,339,016 →
Application:
09/607,389 →
Method and Apparatus for Forming a Silicon Wafer with a Denuded Zone
Patent:
6,599,815 →
Application:
09/607,391 →
Non-Contaminating Gas-Tight Valve for Semiconductor Applications
Patent:
6,435,474 →
Application:
09/608,304 →
Method and Apparatus for a Wafer Carrier Having an Insert
Patent:
6,454,635 →
Application:
09/633,958 →
Method for Producing Czochralski Silicon Free of Agglomerated Self-Interstitial Defects
Patent:
6,635,587 →
Application:
09/661,821 →
Process for Detecting Agglomerated Intrinsic Point Defects by Metal Decoration
Patent:
6,391,662 →
Application:
09/661,822 →
Radio frequency identification system and method for tracking silicon wafers
Patent:
6,330,971 →
Application:
09/677,909 →
Method and Apparatus to Place Wafers into and Out of Machine
Patent:
6,398,631 →
Application:
09/681,160 →
Polishing Apparatus, Polishing Head and Method
Heat Shield Assembly for Crystal Pulling Apparatus
Patent:
6,482,263 →
Application:
09/684,266 →
Electrical Resistance Heater and Method for Crystal Growing Apparatus
Patent:
6,503,322 →
Application:
09/691,994 →
Ideal Oxygen Precipitating Silicon Wafers and Oxygen Out-Diffusion-Less Process Therefor
Patent:
6,586,068 →
Application:
09/704,893 →
A Process for the Preparation of an Ideal Oxygen Precipitating Silicon Wafer Having an Asymmetrical Vacancy Concentration Profile Capable of Forming an Enhanced Denuded Zone
Patent:
6,579,779 →
Application:
09/704,900 →
Low Defect Density, Ideal Oxygen Precipitating Silicon
Patent:
6,555,194 →
Application:
09/705,092 →
Method for Preparing Molten Silicon Melt from Polycrystalline Silicon Charge
Patent:
6,454,851 →
Application:
09/711,198 →
Defect Classification Using Scattered Light Intensities
Patent:
6,515,742 →
Application:
09/723,847 →
Silicon on insulator structure having a low defect density handle wafer and process for the preparation thereof
Semiconductor Wafer Holder
Epitaxial Silicon Wafer Free from Autodoping and Backside Halo and a Method and Apparatus for the Preparation Thereof
Carrier for Cleaning Silicon Wafers
Patent:
6,520,191 →
Application:
09/807,907 →
Crystal Puller and Method for Growing Monocrystalline Silicon Ingots
Patent:
6,447,601 →
Application:
09/811,982 →
Heat Shield Assembly for Crystal Puller
Low Defect Density, Self-Interstitial Dominated Silicon
Low Defect Density Silicon and a Process for Producing Low Defect Density Silicon Wherein V/G0 Is Controlled by Controlling Heat Transfer at the Melt/Solid Interface
Process for Growing Silicon Crystals Which Allows for Variability in Process Conditions While Suppressing the Formation of Agglomerated Intrinsic Point Defects
Epitaxial Silicon Wafer with Intrinsic Gettering and a Method for the Preparation Thereof
Barium Doping of Molten Silicon for Use in Crystal Growing Process
Process for Preparing Low Defect Density Silicon Using High Growth Rates
An Epitaxial Wafer Substantially Free of Grown-in Defects
Crystal Puller and Method for Growing Monocrystalline Silicon Ingots
Method and Apparatus for Processing a Semiconductor Wafer Using Novel Final Polishing Method
Process for the Preparation of Non-Oxygen Precipitating Czochralski Silicon Wafers
Process for Preparing a Silicon Melt
Method for the Production of Low Defect Density Silicon
Vacancy, Dominated, Defect-Free Silicon
Method for Controlling Growth of a Silicon Crystal to Minimize Growth Rate and Diameter Deviations
Process for Reclaiming Semiconductor Wafers and Reclaimed Wafers
Granular Semiconductor Material Transport System and Process
Process for Growing Defect-Free Silicon Wherein the Grown Silicon Is Cooled in a Separate Chamber
Process for Producing a Silicon Melt
SOI structure having a device layer which is vacancy dominated and substantially free fo agglomerated vacancy type defects
Single Crystal Silicon Having Improved Gate Oxide Integrity
Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults
Process for Producing Thermally Annealed Wafers Having Improved Internal Gettering
Thermal Annealing Process for Producing Low Defect Density Single Crystal Silicon
Thermal Annealing Process for Producing Silicon Wafers with Improved Surface Characteristics
Control of Oxygen Precipitate Formation in High Resistivity Cz Silicon
Low Defect Density Regions of Self-Interstitial Dominated Silicon
Low Defect Density Epitaxial Wafer and a Process for the Preparation Thereof
Silicon on Insulator Struture Having an Epitaxial Layer and Intrinsic Gettering
Controlled Neck Growth Process for Single Crystal Silicon
Non-Oxygen Precipitating Czochralski Silicon Wafers
Modified Susceptor for Use in Chemical Vapor Deposition Process
Crystal Puller for Growing Monocrystalline Silicon Ingots
A Single Crystal Silicon Ingot Having a High Arsenic Concentration
Process for Growing a Silicon Crystal Segment Substantially Free from Agglomerated Intrinsic Point Defects Which Allows for Variability in the Process Conditions
Seed Crystals for Pulling Single Crystal Silicon
Ideal Oxygen Precipitating Silicon Wafers with Nitrogen/Carbon Stabilized Oxygen Precipitate Nucleation Centers and Process for Making the Same
Process for Producing Low Defect Density, Ideal Oxygen Precipitating Silicon
Nitrogen-Doped Silicon Substantially Free of Oxidation Induced Stacking Faults
Epitaxial Silicon Wafer with Intrinsic Gettering and a Method for the Preparation Thereof
Ideal Oxygen Precipitating Silicon Wafers and Oxygen Out-Diffusion-Less Process Therefor
Process for Cooling a Silicon Ingot Having a Vacancy Dominated Region to Produce Defect Free Silicon
Single Crystal Silicon Wafer Having an Epitaxial Layer Substantially Free from Grown-in Defects
Wafer Carrier
Process for the Preparation of an Ideal Oxygen Precipitating Silicon Wafer Capable of Forming an Enhanced Denuded Zone
Fluid Sealing System for a Crystal Puller
Wafer Clamping Device for a Double Side Grinder
Process for Preparing a Stabilized Ideal Oxygen Precipitating Silicon Wafer
Method to Monitor and Control the Crystal Cooling or Quenching Rate by Measuring Crystal Surface Temperature
Process for Preparing Single Crystal Silicon Using Crucible Rotation to Control Temperature Gradient
Crystal Puller and Method for Growing a Monocrystalline Ingot
Process for Metallic Contamination Reduction in Silicon Wafers
Partially Devitrified Crucible
High Purity Silicon Carbide Structures
Process for Making Non-Uniform Minority Carrier Lifetime Distribution in High Performance Silicon Power Devices
Systems and Methods for Measuring and Reducing Dust in Granular Material
Process for Making Silicon Wafers with Stabilized Oxygen Precipitate Nucleation Centers
Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults
Controlling Melt-Solid Interface Shape of a Growing Silicon Crystal Using a Variable Magnetic Field
Electromagnetic Pumping of Liquid Silicon in a Crystal Growing Process
Semiconductor Wafer Boat for a Vertical Furnace
Patent:
7,033,168 →
Application:
11/041,593 →
Method for the Production of Low Defect Density Silicon
Low Defect Density, Ideal Oxygen Precipitating Silicon
Method for Controlling of Thermal Donor Formation in High Resistivity Cz Silicon
Process for Preparing Single Crystal Silicon Having Improved Gate Oxide Integrity
Modified Susceptor for Barrel Reactor
Silicon Wafer Etching Process and Composition
Melter Assembly and Method for Charging a Crystal Forming Apparatus with Molten Source Material
Melter Assembly and Method for Charging a Crystal Forming Apparatus with Molten Source Material
Melter Assembly and Method for Charging a Crystal Forming Apparatus with Molten Source Material
Process for Producing Silicon on Insulator Structure Having Intrinsic Gettering by Ion Implantation
Arsenic and Phosphorus Doped Silicon Wafer Substrates Having Intrinsic Gettering
Silicon Structures with Improved Resistance to Radiation Events
High Resistivity Silicon Structure and a Process for the Preparation Thereof
Method of Polishing a Semiconductor Wafer
Double Side Wafer Grinder and Methods for Assessing Workpiece Nanotopology
Double Side Wafer Grinder and Methods for Assessing Workpiece Nanotopology
Wire Saw Ingot Slicing System and Method with Ingot Preheating, Web Preheating, Slurry Temperature Control and/or Slurry Flow Rate Control
Nitrogen-Doped Silicon Substantially Free of Oxidation Induced Stacking Faults
Semiconductor wafer with high thermal conductivity
Application:
11/698,728 →
Publication:
US 2007/0176238
Controlling Agglomerated Point Defect and Oxygen Cluster Formation Induced by the Lateral Surface of a Silicon Single Crystal During Cz Growth
Silicon Material with Controlled Agglomerated Point Defects and Oxygen Clusters Induced by the Lateral Surface
Process for Forming Low Defect Density, Ideal Oxygen Precipitating Silicon
Controlling Melt-Solid Interface Shape of a Growing Silicon Crystal Using a Variable Magnetic Field
Method for Purifying Silicon Carbide Coated Structures
Non-Uniform Minority Carrier Lifetime Distributions in High Performance Silicon Power Devices
Dressing a Wafer Polishing Pad
Methods for Producing Smooth Wafers
Epitaxial Barrel Susceptor Having Improved Thickness Uniformity
Semiconductor Wafer Carrier Blade
Nanotopography Control and Optimization Using Feedback from Warp Data
Silicon Wafer Etching Compositions
Method and Device for Feeding Arsenic Dopant into a Silicon Crystal Growing Apparatus
Semiconductor Wafer Polishing Apparatus and Method of Polishing
Low Thermal Mass Semiconductor Wafer Support
Method and Device for Continuously Measuring Silicon Island Elevation
Patent:
7,573,587 →
Application:
12/197,669 →
Wafer Holder for Supporting a Semiconductor Wafer During a Thermal Treatment Process
Arsenic and Phosphorus Doped Silicon Wafer Substrates Having Intrinsic Gettering
System and Method for Dressing a Wafer Polishing Pad
Edge Etching Apparatus for Etching the Edge of a Silicon Wafer
Application:
12/415,274 →
Publication:
US 2009/0242126
Methods for Etching the Edge of a Silicon Wafer
Edge Etched Silicon Wafers
Methods for Preparing a Semiconductor Structure for Use in Backside Illumination Applications
Controlling a Melt-Solid Interface Shape of a Growing Silicon Crystal Using an Unbalanced Magnetic Field and Iso-Rotation
Generating a Pumping Force in a Silicon Melt by Applying a Time-Varying Magnetic Field
Method for Feeding Arsenic Dopant into a Silicon Crystal Growing Apparatus
Method for Assessing Workpiece Nanotopology Using a Double Side Wafer Grinder
Methods for Generating Representations of Flatness Defects on Wafers
Systems for Generating Representations of Flatness Defects on Wafers
Systems for Weighing a Pulled Object
Systems for Weighing a Pulled Object Having a Changing Weight
Wafer Support Ring
Method and System for Processing Abrasive Slurry
Application:
12/840,549 →
Publication:
US 2011/0017230
Semiconductor and Solar Wafers
Methods and Systems for Adjusting Operation of a Wafer Grinder Using Feedback from Warp Data
Methods of Grinding Semiconductor Wafers Having Improved Nanotopology
Process for Annealing Semiconductor Wafers with Flat Dopant Depth Profiles
Patent:
8,153,538 →
Application:
12/964,143 →
Methods for Monitoring the Amount of Contamination Imparted into Semiconductor Wafers During Wafer Processing
Methods for Processing Silicon on Insulator Wafers
Method for the Preparation of a Multi-Layered Crystalline Structure
Semiconductor Wafers with Reduced Roll-Off and Bonded and Unbonded Soi Structures Produced from Same
Methods for Reducing the Width of the Unbonded Region in Soi Structures
Hydrostatic Pad Pressure Modulation in a Simultaneous Double Side Wafer Grinder
Bulk Silicon Wafer Product Useful in the Manufacture of Three Dimensional Multigate Mosfets
Method and System for Stripping the Edge of a Semiconductor Wafer
Methods for in-Situ Passivation of Silicon-on-Insulator Wafers
Methods for Preparing a Semiconductor Wafer with High Thermal Conductivity
Low Thermal Mass Semiconductor Wafer Plate
Low Thermal Mass Semiconductor Wafer Boat
Adapter Ring For Silicon Electrode
Application:
13/237,049 →
Publication:
US 2012/0073752
Crucibles with a Reduced Amount of Bubbles and Ingots and Wafers Produced by Use of Such Crucibles
Application:
13/299,917 →
Publication:
US 2013/0129973
Methods for Producing Crucibles with a Reduced Amount of Bubbles
Methods for Producing Crucibles with a Reduced Amount of Bubbles
Processes for Producing Silicon Ingots
Application:
13/299,929 →
Publication:
US 2013/0125719
Methods for Monitoring the Amount of Metal Contamination in a Process
Methods for Reducing the Metal Content in the Device Layer of Soi Structures and Soi Structures Produced by Such Methods
Method of Manufacturing Silicon-On-Insulator Wafers
Systems and Methods for Cleaving A Bonded Wafer Pair
Silicon on Insulator Structures Having High Resistivity Regions in the Handle Wafer
Application:
13/419,137 →
Publication:
US 2012/0235283
Methods for Producing Silicon on Insulator Structures Having High Resistivity Regions in the Handle Wafer
Systems and Methods For Ultrasonically Cleaving A Bonded Wafer Pair
Application:
13/432,326 →
Publication:
US 2012/0247686
Susceptor For Improved Epitaxial Wafer Flatness
Application:
13/443,074 →
Publication:
US 2013/0263779
Methods for Fabricating a Semiconductor Wafer Processing Device
Direct Formation of Graphene on Semiconductor Substrates
Methods for Cleaving a Bonded Wafer Structure
Clamping Apparatus for Cleaving a Bonded Wafer Structure
Air Pocket Detection Methods and Systems
Symmetry Based Air Pocket Detection Methods and Systems
Methods For Mounting An Ingot On A Wire Saw
Method for the Preparation of a Multi-Layered Crystalline Structure
Application:
13/730,011 →
Publication:
US 2013/0137241
Methods For Processing Abrasive Slurry
Application:
13/733,468 →
Publication:
US 2013/0118091
Systems For Processing Abrasive Slurry
Application:
13/733,499 →
Publication:
US 2013/0118962
Methods For Analysis Of Water And Substrates Rinsed In Water
Application:
13/750,371 →
Publication:
US 2013/0133407
Soi Structures Having a Sacrificial Oxide Layer
Application:
13/762,967 →
Publication:
US 2013/0168836
Soi Structures with Reduced Metal Content
Application:
13/762,974 →
Publication:
US 2013/0168802
Susceptor Assemblies for Supporting Wafers in a Reactor Apparatus
Direct and Sequential Formation of Monolayers of Boron Nitride and Graphene on Substrates
Uv Treatment of Polished Wafers
Application:
14/045,325 →
Publication:
US 2014/0096793
Related Assignments
(21)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Agreement
May 31, 2012
From: MOMENTIVE PERFORMANCE MATERIALS INC
To: BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE
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Security Agreement
Oct 1, 2012
From: NVT, LLC; SUN EDISON LLC; SOLAICX, INC.; MEMC ELECTRONIC MATERIALS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 029057/0810 →
Patent Security Agreement
Apr 3, 2013
From: MOMENTIVE PERFORMANCE MATERIALS INC.
To: BANK OF NEW YORK MELLON TRUST COMPANY, N.A., THE
Reel/Frame 030185/0001 →
Security Agreement
Apr 29, 2013
From: MOMENTIVE PERFORMANCE MATERIALS INC.
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 030311/0343 →
Release of Security Interest
Dec 26, 2013
From: GOLDMAN SACHS BANK USA
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0092 →
Release of Security Interest
Dec 26, 2013
From: BANK OF AMERICA, N.A.
To: ENFLEX CORPORATION; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0031 →
Security Agreement
Jan 30, 2014
From: SUNEDISON, INC.; SOLAICX; SUN EDISON, LLC; NVT, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 032177/0359 →
Release of Security Interest
Mar 3, 2014
From: DEUTSCHE BANK AG NEW YORK BRANCH
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC.
Reel/Frame 032382/0724 →
Release of Security Interest to Reel/Frame: 012280/0161
Mar 17, 2014
From: CITICORP USA, INC.
To: MEMC ELECTRONIC MATERIALS, INC. (NOW KNOWN AS SUNEDISON, INC.); MEMC PASADENA, INC.; PLASMASIL, L.L.C.; SIBOND, L.L.C.
Reel/Frame 032458/0794 →
Notice of License Agreement
Jun 6, 2014
From: SUNEDISON SEMICONDUCTOR LIMITED
To: SUNEDISON SEMICONDUCTOR TECHNOLOGY PTE. LTD.
Reel/Frame 033099/0001 →
Security Interest
Oct 27, 2014
From: MOMENTIVE PERFORMANCE MATERIALS INC.
To: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT
Reel/Frame 034066/0570 →
Security Interest
Oct 27, 2014
From: MOMENTIVE PERFORMANCE MATERIALS INC.
To: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT
Reel/Frame 034066/0662 →
Termination and Release of Security Interest in Patent Rights
Oct 30, 2014
From: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A.
To: MOMENTIVE PERFORMANCE MATERIALS INC.
Reel/Frame 034113/0331 →
Termination and Release of Security Interest in Patent Rights
Oct 30, 2014
From: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A.
To: MOMENTIVE PERFORMANCE MATERIALS INC.
Reel/Frame 034113/0252 →
Notice of Change of Collateral Agent - Assignment of Security Interest in Intellectual Property - Second Lien
Mar 6, 2015
From: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A. AS COLLATERAL AGENT
To: BOKF, NA, AS SUCCESSOR COLLATERAL AGENT
Reel/Frame 035137/0263 →
Notice of Change of Collateral Agent - Assignment of Security Interest in Intellectual Property
Mar 6, 2015
From: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A. AS COLLATERAL AGENT
To: BOKF, NA, AS SUCCESSOR COLLATERAL AGENT
Reel/Frame 035136/0457 →
Release of Security Interest
May 15, 2019
From: BOKF, NA
To: MOMENTIVE PERFORMANCE MATERIALS INC.
Reel/Frame 049194/0085 →
Release of Security Interest
May 15, 2019
From: BOKF, NA
To: MOMENTIVE PERFORMANCE MATERIALS INC.
Reel/Frame 049249/0271 →
Termination and Release of Security Interest in Patents
May 21, 2019
From: JPMORGAN CHASE BANK, N.A.
To: MOMENTIVE PERFORMANCE MATERIALS INC.
Reel/Frame 050304/0555 →
Release of Security Interest
Nov 11, 2020
From: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
To: MOMENTIVE PERFORMANCE MATERIALS INC.; MOMENTIVE PERFORMANCE MATERIALS GMBH & CO KG; MOMENTIVE PERFORMANCE MATERIALS JAPAN HOLDINGS GK
Reel/Frame 054387/0001 →
Release of Security Interest
Dec 24, 2020
From: THE BANK OF NEW YORK MELLON TRUST COMPANY, N.A., AS COLLATERAL AGENT
To: MOMENTIVE PERFORMANCE MATERIALS INC.
Reel/Frame 054883/0855 →