IP Library Granted Patent US 7,291,222
Granted Patent B2
US 7,291,222 · App. 10/930,654 · Granted Nov 6, 2007

Systems and methods for measuring and reducing dust in granular material

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Quick Facts
Patent No.
US 7,291,222
App. No.
10/930,654
Granted
Nov 6, 2007
Kind
B2
Abstract

The invention is directed to apparatus and methods for measuring and for reducing dust in granular polysilicon. In one aspect, a system includes a process vessel having a vacuum port for pulling dust from the polysilicon. Another system of the invention includes a baffle tube for receiving a polysilicon flow. A measuring system includes a manifold and filter for separating and measuring the dust from a flow of polysilicon. The invention is also directed to methods of using the systems, to methods of manufacturing and packaging granular polysilicon, and to a supply of granular polysilicon.

Claims (67)

1. A system for removing dust from granular polysilicon comprising:

a vacuum source for pulling dust away from the granular polysilicon;

a process vessel adapted to receive the granular polysilicon

the process vessel including:

opposite first and second ends,

a polysilicon passage in the first end for allowing passage of the granular polysilicon and

a vacuum port for connection to the vacuum source;

the vacuum port disposed adjacent the second end of the process vessel so that the granular polysilicon does not block the port when the process vessel is rotated from the upright position for pouring of the granular polysilicon from the process vessel; and

a container for receiving the granular polysilicon from the process vessel.

2. The system as set forth in claim 1 wherein the vacuum port is disposed in a side wall of the process vessel.

3. The system as set forth in claim 1 in combination with the granular polysilicon, wherein there is less than 3 mg of dust per 10 kg of the granular polysilicon received in the container.

4. The system as set forth in claim 1 further comprising a valve connected to the polysilicon passage for selectively stopping flow of the granular polysilicon through the polysilicon passage.

5. The system as set forth in claim 4 wherein the valve is an angle of repose valve.

6. A process vessel adapted to receive granular polysilicon comprising:

opposite first and second ends,

a polysilicon passage in the first end for allowing passage of the granular polysilicon; and

a vacuum port for connection to a vacuum source;

a closure for the vacuum port;

the vacuum port being disposed adjacent the second end of the process vessel so that the granular polysilicon does not block the port when the process vessel is rotated from the upright position for pouring of the granular polysilicon from the process vessel.

7. The system as set forth in claim 6 wherein the vacuum port is disposed in a side wall of the process vessel.

8. The system as set forth in claim 6 in combination with the granular polysilicon, wherein there is less than 3 mg of dust per 10 kg of the granular polysilicon received in the container.

9. The system as set forth in claim 6 further comprising a valve connected to the polysilicon passage for selectively stopping flow of the granular polysilicon through the polysilicon passage.

10. A method of removing dust from a quantity of polysilicon material comprising granular polysilicon and dust stored in a process vessel having a polysilicon passage in one end for discharging the granular polysilicon and a vacuum port in or adjacent an opposite end and spaced from the granular polysilicon, the method comprising:

pouring the quantity of polysilicon material from the process vessel into a container;

pulling a vacuum through the vacuum port to pull the dust from around the granular polysilicon and to inhibit pulling of the granular polysilicon.

11. The method as set forth in claim 10 wherein the pouring and pulling steps are performed repeatedly until there is less than 3 mg of dust per 10 kg of granular polysilicon received in the container.

12. The method as set forth in claim 10 wherein the vacuum pulling step is performed at a pressure between 1.3 and 5.1 centimeters of water below atmospheric pressure.

13. The method as set forth in claim 10 wherein the vacuum pulling step is performed at a pressure between 1.8 and 2.3 centimeters of water below atmospheric pressure and the polysilicon is poured at a flow rate between 10-12 kilograms per minute.

14. A system for removing dust from a flow of granular polysilicon comprising:

a baffle tube having an upper opening adapted for fluid communication with a granular polysilicon supply for receiving the flow of granular polysilicon, and a lower opening for discharging the granular polysilicon;

at least one baffle below the upper opening to alter the direction of flow of the granular polysilicon to encourage dust entrained in the granular polysilicon to separate from the granular polysilicon; and

a vacuum source connected to the upper opening to pull gas-entrained dust opposite a direction of the flow of the granular polysilicon through the baffle tube.

15. The system as set forth in claim 14 further comprising a housing mounting the baffle tube.

16. The system as set forth in claim 15 wherein the housing mounts a funnel disposed above the baffle tube for shielding the flow of polysilicon from the vacuum.

17. The system as set forth in claim 15 wherein the housing includes a vacuum port disposed above the upper opening of the baffle tube to inhibit pulling of the polysilicon through the vacuum port.

18. A system for measuring dust in a flow of granular polysilicon comprising:

a vacuum source;

a filter to capture dust for use in measuring the dust;

a manifold including:

a dust collection chamber for allowing passage of the granular polysilicon;

an outlet extending from the chamber and in fluid communication with the vacuum source for pulling dust from the chamber; and

an air passage including at least one port extending from the chamber to an atmosphere surrounding the system,

wherein the filter is disposed between the outlet and the vacuum source;

the one port of the air passage being disposed adjacent the outlet for drawing ambient air through the chamber opposite the direction of flow of the granular polysilicon and thereby encouraging the dust to exit the chamber through the outlet and thereafter be trapped in the filter.

19. The system as set forth in claim 18 wherein the air passage includes six equally spaced ports within about 2.5 cm of the outlet.

20. The system as set forth in claim 19 wherein the air passage is disposed below the outlet.

21. The system as set forth in claim 18 wherein the filter is made of paper.

22. The system as set forth in claim 18 wherein the outlet is sized between about 0.25 and about 0.36 centimeters.

23. A method of measuring dust from a flow of polysilicon material including granular polysilicon and dust using an apparatus comprising a vacuum source, a manifold including a dust collection chamber for the flow of polysilicon material, an outlet extending from the dust collection chamber and in fluid communication with the vacuum source, a filter disposed between the outlet and the vacuum source, an air passage extending from the chamber to an atmosphere surrounding the system, the air passage including a port disposed adjacent the outlet, the method comprising the steps, in order, of:

weighing the filter a first time;

operating the vacuum source for a predetermined period of time as the stream of polysilicon material flows through the chamber at a predetermined mass flow rate, the vacuum source operating to draw air and dust through the outlet and to the filter where the dust is captured and air passes through to the vacuum source;

stopping operation of the vacuum source; and

weighing the filter a second time after operation of the vacuum source to determine the weight of the dust captured by the filter.

24. The method set forth in claim 23 wherein the vacuum source is operated at a predetermined flow rate to draw dust of 10 microns or less.

25. The method set forth in claim 23 wherein the predetermined period of time is more than about 30 seconds and less than about 90 seconds.

26. The method set forth in claim 23 wherein the predetermined polysilicon flow rate is about 10-12 kg/minute and the air is drawn into the air passage at a rate of about 2.5 liters/minute.

27. A supply of granular polysilicon produced in a continuous manufacturing method and suitable for making semiconductor grade crystal, the granular polysilicon having an average diameter or average width sized between 400 and 1400 microns, wherein the supply of granular polysilicon weighs at least about 3000 kg, and wherein particles of dust entrained in the polysilicon are sized less than 10 microns and have a mass less than 3 mg of dust per 100 kg of polysilicon.

28. A supply as set forth in claim 27 wherein the supply is contained in a plurality of containers.

29. A method of manufacturing granular polysilicon comprising:

forming the granular polysilicon by chemical vapor deposition in a fluidized bed process;

classifying the granular polysilicon by size;

removing dust from the granular polysilicon so that dust within the granular polysilicon has a mass less than 3 mg per 100 kg of polysilicon; and

packaging the granular polysilicon after the dust has been removed.

30. A method as set forth in claim 29 wherein the dust removal step includes delivering polysilicon material including granular polysilicon and dust to a baffle tube.

31. A method as set forth in claim 30 wherein the dust removal step includes pulling a vacuum on the baffle tube to pull dust from the polysilicon material.

32. A method as set forth in claim 30 further comprising the step of transferring the polysilicon material to a hopper prior to removing the dust, and wherein the dust removal step includes pulling a vacuum on the polysilicon material in the hopper to remove the dust therefrom.

33. A method as set forth in claim 32 further comprising the step of dehydrogenating the granular polysilicon material.

Assignments (10)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2018
From: SUNEDISON SEMICONDUCTOR LIMITED; MEMC JAPAN LIMITED; MEMC ELECTRONIC MATERIALS S.P.A.
To: GLOBALWAFERS CO., LTD.
Reel/Frame 046327/0001 →
NOTICE OF LICENSE AGREEMENT Recorded Jun 6, 2014
From: SUNEDISON SEMICONDUCTOR LIMITED
To: SUNEDISON SEMICONDUCTOR TECHNOLOGY PTE. LTD.
Reel/Frame 033099/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2014
From: MEMC ELECTRONIC MATERIALS, INC.
To: SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H)
Reel/Frame 033023/0430 →
RELEASE OF SECURITY INTEREST Recorded Mar 3, 2014
From: DEUTSCHE BANK AG NEW YORK BRANCH
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC.
Reel/Frame 032382/0724 →
SECURITY AGREEMENT Recorded Jan 30, 2014
From: SUNEDISON, INC.; SOLAICX; SUN EDISON, LLC; NVT, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 032177/0359 →
RELEASE OF SECURITY INTEREST Recorded Dec 26, 2013
From: BANK OF AMERICA, N.A.
To: ENFLEX CORPORATION; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0031 →
RELEASE OF SECURITY INTEREST Recorded Dec 26, 2013
From: GOLDMAN SACHS BANK USA
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0092 →
SECURITY AGREEMENT Recorded Oct 1, 2012
From: NVT, LLC; SUN EDISON LLC; SOLAICX, INC.; MEMC ELECTRONIC MATERIALS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 029057/0810 →
SECURITY AGREEMENT Recorded Apr 1, 2011
From: MEMC ELECTRONIC MATERIALS, INC.; SUNEDISON LLC; SOLAICX
To: BANK OF AMERICA, N.A.
Reel/Frame 026064/0720 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 17, 2004
From: HOLDER, JOHN D.; SREEDHARAMURTHY, HARIPRASAD; HILKER, JOHN D.
To: MEMC ELECTRONIC MATERIALS, INC.
Reel/Frame 015390/0001 →