IP Library › Assignment 032458/0794
Patent Assignment
Reel/Frame 032458/0794

Release of Security Interest to Reel/Frame: 012280/0161

Recorded: 2014-03-17 Pages: 21
Assignor
CITICORP USA, INC.
Executed: 2014-03-13
Assignees
MEMC ELECTRONIC MATERIALS, INC. (NOW KNOWN AS SUNEDISON, INC.)
501 PEARL DRIVE, ST. PETERS, MISSOURI, 63376
MEMC PASADENA, INC.
3000 N. SOUTH STREET, PASADENA, TEXAS, 77503
PLASMASIL, L.L.C.
501 PEARL DRIVE, ST. PETERS, MISSOURI, 63376
SIBOND, L.L.C.
501 PEARL DRIVE, ST. PETERS, MISSOURI, 63376
MEMC SOUTHWEST INC.
501 PEARL DRIVE, ST. PETERS, MISSOURI, 63376
MEMC INTERNATIONAL, INC. (NOW KNOWN AS SUNEDISON INTERNATIONAL, INC.)
501 PEARL DRIVE, ST. PETERS, MISSOURI, 63376
Covered Properties (261)
Chlorosilane Disproportionation Process
Patent: 4,395,389 →
Application: 06/353,491 →
Package
Patent: 4,450,960 →
Application: 06/412,980 →
Silane Purification Process
Patent: 4,532,120 →
Application: 06/566,279 →
Denuding Silicon Substrates with Oxygen and Halogen
Patent: 4,666,532 →
Application: 06/607,349 →
Conditioned Semiconductor Substrates
Patent: 4,622,082 →
Application: 06/607,996 →
Gas Stream Purification
Patent: 4,554,141 →
Application: 06/609,812 →
Process for Production of Silane
Patent: 4,632,816 →
Application: 06/701,947 →
Gettering
Patent: 4,608,096 →
Application: 06/736,203 →
Furnace Contamination
Patent: 4,668,330 →
Application: 06/804,709 →
Semiconductor Wafer Fabrication with Improved Control of Internal Gettering Sites Using Rapid Thermal Annealing
Patent: 4,851,358 →
Application: 07/154,759 →
Process for Preparation of Silane
Patent: 5,075,092 →
Application: 07/296,484 →
Semiconductor Wafer Fabrication with Improved Control of Internal Gettering Sites Using Rta
Patent: 4,868,133 →
Application: 07/324,858 →
Silane Compositions and Process
Patent: 5,206,004 →
Application: 07/723,785 →
Method for Controlling Oxygen Content of Silicon Crystals Using a Combination of Cusp Magnetic Field and Crystal and Crucible Rotation Rates
Patent: 5,178,720 →
Application: 07/744,891 →
Antimicrobial Device for Urine Drainage Container
Patent: 5,417,676 →
Application: 07/818,210 →
Removal of Ethylene from Silane Using a Distillation Step After Separation Using a Zeolite Molecular Sieve
Patent: 5,211,931 →
Application: 07/859,146 →
Method for Growing Multiple Single Crystals and Apparatus for Use Therein
Patent: 5,288,366 →
Application: 07/873,375 →
Silane Compositions and Process
Patent: 5,290,342 →
Application: 07/873,461 →
Cleaning of Polycrystalline Silicon for Charging into a Czochralski Growing Process
Patent: 5,445,679 →
Application: 07/996,037 →
Wafer Polishing Apparatus and Method
Patent: 5,377,451 →
Application: 08/021,215 →
Capacitive Distance Measuring Apparatus Having Liquid Ground Contact
Patent: 5,376,890 →
Application: 08/074,915 →
Method for Growing Silicon Crystal
Patent: 5,408,951 →
Application: 08/095,759 →
Process and Apparatus for Etching Semiconductor Wafers
Patent: 5,340,437 →
Application: 08/133,980 →
Method for Growing Multiple Single Crystals and Apparatus for Use Therein
Patent: 5,373,807 →
Application: 08/148,896 →
Hopper for Use in Charging Semiconductor Souce Material
Patent: 5,488,924 →
Application: 08/163,661 →
Device for Suppressing Particle Splash Onto a Semiconductor Wafer
Patent: 5,439,523 →
Application: 08/195,766 →
Semiconductor Wafer Polisher and Method
Patent: 5,422,316 →
Application: 08/214,969 →
Methods and Apparatus for Determining Interstitial Oxygen Content of Relatively Large Diameter Silicon Crystals by Infrared Spectroscopy
Patent: 5,550,374 →
Application: 08/241,972 →
Semiconductor Wafer Polishing Apparatus and Method
Patent: 5,605,487 →
Application: 08/242,560 →
Method of Rough Polishing Semiconductor Wafers to Reduce Surface Roughness
Patent: 5,571,373 →
Application: 08/245,592 →
Gettering of Metals from Solution
Patent: 5,622,568 →
Application: 08/259,052 →
Method for Etching a Semiconductor Material Without Altering Flow Pattern Defect Distribution
Patent: 5,573,680 →
Application: 08/283,782 →
Pre-Thermal Treatment Cleaning Process of Wafers
Patent: 5,516,730 →
Application: 08/296,537 →
Method and Apparatus for Automated Quality Control in Wafer Slicing
Patent: 5,632,666 →
Application: 08/330,906 →
Process for Stripping Outer Edge of Besoi Wafers
Patent: 5,668,045 →
Application: 08/346,695 →
Precision Controlled Precipitation of Oxygen in Silicon
Patent: 5,593,494 →
Application: 08/403,301 →
Single-Etch Stop Process for the Manufacture of Silicon-on-Insulator Substrates
Patent: 5,494,849 →
Application: 08/409,208 →
Susceptor and Baffle Therefor
Patent: 5,518,549 →
Application: 08/423,363 →
Method for Cleaning Semiconductor Wafers with Sonic Energy and Passing Through a Gas-Liquid-Interface
Patent: 5,593,505 →
Application: 08/424,904 →
Apparatus and Method for Semiconductor Wafer Edge Inspection
Patent: 5,592,295 →
Application: 08/436,840 →
Method for Controlling Growth of a Silicon Crystal
Patent: 5,653,799 →
Application: 08/459,765 →
A Silicon Single Crystal Having Eliminated Disclocation in Its Neck Crystal
Patent: 5,578,284 →
Application: 08/483,304 →
Apparatus for Rotating a Crucible of a Crystal Pulling Machine
Patent: 5,593,498 →
Application: 08/488,924 →
Surface-Treated Crucibles for Improved Zero Dislocation Performance
Patent: 5,976,247 →
Application: 08/490,465 →
Apparatus and Method for Adjusting the Position of a Pull Wire of a Crystal Pulling Machine
Patent: 5,582,642 →
Application: 08/492,666 →
Method for Preparing Molten Silicon Melt from Polycrystalline Silicon Charge
Patent: 5,588,993 →
Application: 08/507,055 →
Cleaning of Metallic Contaminants from the Surface of Polycrystalline Silicon with a Halogen Plasma
Patent: 5,753,567 →
Application: 08/519,993 →
Method for Tuning Barrel Reactor Purge System
Patent: 5,908,504 →
Application: 08/530,612 →
Solid Material Delivery System for a Furnace
Patent: 5,762,491 →
Application: 08/551,152 →
Non-Distorting Video Camera for Use with a System for Controlling Growth of a Silicon Crystal
Patent: 5,656,078 →
Application: 08/558,609 →
Pre-Thermal Treatment Cleaning Process
Patent: 5,712,198 →
Application: 08/568,997 →
Method and Apparatus for Purging Barrel Reactors
Patent: 5,746,834 →
Application: 08/582,650 →
Single-Etch Stop Process for the Manufacture of Silicon-on-Insulator Wafers
Patent: 5,937,312 →
Application: 08/584,058 →
Rapid Cooling of Cz Silicon Crystal Growth System
Patent: 5,676,751 →
Application: 08/589,491 →
Apparatus for Controlling Nucleation of Oxygen Precipitates in Silicon Crystals
Patent: 5,840,120 →
Application: 08/589,612 →
Method for Preparing Molten Silicon Melt from Polycrystalline Silicon Charge
Patent: 5,814,148 →
Application: 08/595,075 →
Moisture Barrier Bag Having Window
Patent: 6,026,963 →
Application: 08/604,813 →
System for Controlling Growth of a Silicon Crystal
Patent: 5,665,159 →
Application: 08/620,137 →
Apparatus and Method for Shaping Polishing Pads
Patent: 5,840,202 →
Application: 08/639,185 →
Dehumidifier
Patent: 5,799,728 →
Application: 08/641,179 →
Method and Apparatus for Aiming a Barrel Reactor Nozzle
Patent: 5,843,234 →
Application: 08/644,181 →
Automated Wafer Lapping System
Patent: 5,679,055 →
Application: 08/653,666 →
Process for Eliminating Dislocations in the Neck of a Silicon Single Crystal
Patent: 5,628,823 →
Application: 08/675,550 →
Apparatus for Cleaning Semiconductor Wafers
Patent: 5,626,159 →
Application: 08/686,367 →
Cooling System and Method for Epitaxial Barrel Reactor
Patent: 5,849,076 →
Application: 08/686,565 →
Polysilicon Particle Classifying Apparatus
Patent: 5,791,493 →
Application: 08/686,570 →
Method and Apparatus for Controlling Flatness of Polished Semiconductor Wafer
Patent: 5,787,595 →
Application: 08/689,432 →
Process for Controlling Thermal History of Czochralski-Grown Silicon
Patent: 5,779,791 →
Application: 08/694,157 →
Cutting Machine
Patent: 5,827,113 →
Application: 08/710,655 →
Sio Probe for Real-Time Monitoring and Control of Oxygen During Czochralski Growth of Single Crystal Silicon
Patent: 5,795,381 →
Application: 08/711,085 →
Cutting Machine
Patent: 5,735,258 →
Application: 08/717,092 →
Device for Transferring a Semiconductor Wafer
Patent: 5,765,890 →
Application: 08/724,908 →
A Method for Rotating a Crucible of a Crystal Pulling Machine
Patent: 5,766,341 →
Application: 08/725,861 →
Process for Controlling the Oxygen Content in Silicon Wafers Heavily Doped with Antimony or Arsenic
Patent: 5,904,768 →
Application: 08/732,527 →
Gettering Agent
Patent: 5,855,859 →
Application: 08/739,550 →
Control of SIO2 Etch Rate Using Dilute Chemical Etchants in the Presence of a Megasonic Field
Patent: 5,919,311 →
Application: 08/749,906 →
Polishing Block Heater
Patent: 5,770,522 →
Application: 08/764,458 →
Method and System for Monocrystalline Epitaxial Deposition
Patent: 5,789,309 →
Application: 08/774,519 →
Process for Etching N, P, N+ and P+ Type Slugs and Wafers
Patent: 5,843,322 →
Application: 08/779,976 →
Edge Stripped Besoi Wafer
Patent: 5,834,812 →
Application: 08/820,593 →
Apparatus for Cleaning Semiconductor Wafers
Patent: 5,816,274 →
Application: 08/843,632 →
Secondary Edge Reflector for Horizontal Reactor
Patent: 5,792,273 →
Application: 08/863,960 →
Box Closing Apparatus
Patent: 5,870,881 →
Application: 08/883,893 →
Box Handling Apparatus and Method
Patent: 5,894,711 →
Application: 08/891,529 →
Method and Apparatus for Cutting an Ingot
Patent: 6,006,738 →
Application: 08/895,388 →
Method and System for Controlling Growth of a Silicon Crystal
Patent: 5,846,318 →
Application: 08/896,177 →
Heat Shield Assembly and Method of Growing Vacancy Rich Single Crystal Silicon
Patent: 5,942,032 →
Application: 08/904,943 →
Non-Dash Neck Method for Single Crystal Silicon Growth
Patent: 5,885,344 →
Application: 08/907,795 →
Apparatus for Use in Cleaning Wafers
Patent: 5,974,680 →
Application: 08/917,206 →
Process for the Preparation of Silicon Wafers Having a Controlled Distribution of Oxygen Precipitate Nucleation Centers
Patent: 5,882,989 →
Application: 08/934,946 →
Method and System for Controlling Growth of a Silicon Crystal
Patent: 5,882,402 →
Application: 08/939,802 →
Heat Shield for Crystal Puller
Patent: 5,922,127 →
Application: 08/940,166 →
Wafer Demount Apparatus
Patent: 5,865,670 →
Application: 08/941,777 →
Wafer Processing Apparatus
Patent: 5,975,998 →
Application: 08/943,091 →
Radiant Polishing Block Heater
Patent: 5,906,533 →
Application: 08/950,842 →
Process for Preparing a Silicon Melt from a Polysilicon Charge
Patent: 5,919,303 →
Application: 08/951,264 →
Closed Loop Process for Producing Polycrystalline Silicon and Fumed Silica
Patent: 5,910,295 →
Application: 08/966,798 →
Apparatus for Cleaning Semiconductor Wafers
Patent: 5,839,460 →
Application: 08/970,129 →
Wafer Backing Insert for Free Mount Semiconductor Polishing Apparatus and Process
Patent: 5,948,699 →
Application: 08/975,752 →
Apparatus for Use in Crystal Pulling
Patent: 5,935,328 →
Application: 08/978,334 →
Post-Lapping Cleaning Process for Silicon Wafers
Patent: 5,837,662 →
Application: 08/990,123 →
Process for the Control of Nox Generated by Etching of Semiconductor Wafers
Application: 08/991,799 →
Apparatus for Dressing Inside Diameter Saws
Patent: 6,015,335 →
Application: 08/991,962 →
Method and Apparatus for Washing Silicon Ingot with Water to Remove Particulate Matter
Patent: 6,006,736 →
Application: 09/000,061 →
Crystal Growing Apparatus with Melt-Doping Facility
Patent: 6,019,838 →
Application: 09/002,592 →
Crucible and Method of Preparation Thereof
Patent: 5,913,975 →
Application: 09/017,942 →
Ideal Oxygen Precipitating Silicon Wafers and Oxygen Out-Diffusion- Less Process Therefor
Patent: 6,180,220 →
Application: 09/030,110 →
Flattening Process for Epitaxial Semiconductor Wafers
Patent: 6,030,887 →
Application: 09/030,894 →
Apparatus for Moving Exhaust Tube of Barrel Reactor
Patent: 6,039,807 →
Application: 09/040,123 →
Open-Loop Method and System for Controlling Growth of Semiconductor Crystal
Patent: 5,968,263 →
Application: 09/053,164 →
Low Defect Density, Ideal Oxygen Precipitating Silicon
Patent: 6,190,631 →
Application: 09/057,800 →
Low Defect Density Self-Interstitial Dominated Silicon
Patent: 6,254,672 →
Application: 09/057,801 →
Low Defect Density Vacancy Dominated Silicon
Patent: 5,919,302 →
Application: 09/057,851 →
Low Defect Density Silicon
Patent: 6,287,380 →
Application: 09/057,907 →
Method and System for Supplying Semiconductor Source Material
Patent: 6,089,285 →
Application: 09/069,417 →
Injector for Reactor
Patent: 5,891,250 →
Application: 09/072,564 →
Process for the Removal of Copper from Polished Boron Doped Silicon Wafers
Patent: 6,100,167 →
Application: 09/082,905 →
Process for the Removal of Copper and Other Metallic Impurities from Silicon
Patent: 6,482,269 →
Application: 09/082,906 →
Process for the Preparation of Epitaxial Wafers for Resistivity Measurements
Patent: 6,168,961 →
Application: 09/082,933 →
Post-Etching Alkaline Treatment Process
Patent: 5,964,953 →
Application: 09/084,565 →
Electrical Resistance Heater for Crystal Growing Apparatus
Patent: 6,093,913 →
Application: 09/092,391 →
Collector for an Automated on-Line Bath Analysis System
Patent: 6,210,640 →
Application: 09/093,520 →
Process and Appratus for Preparation of Silicon Crystals with Reduced Metal Content
Patent: 6,183,553 →
Application: 09/097,779 →
Susceptor for Barrel Reactor
Patent: 6,129,048 →
Application: 09/107,728 →
Process for Improving Uniform Thickness of Semiconductor Substrates Using Plasma Assisted Chemical Etching
Patent: 6,074,947 →
Application: 09/113,274 →
Gas Discharge Apparatus for Wafer Etching Systems
Patent: 6,063,235 →
Application: 09/134,206 →
Continuous Oxidation Process for Crystal Pulling Apparatus
Patent: 6,039,801 →
Application: 09/167,747 →
Electrode Assembly for Electrical Resistance Heater Used in Crystal Growing Apparatus
Patent: 6,287,382 →
Application: 09/170,789 →
Method and System for Controlling Growth of a Silicon Crystal
Patent: 6,171,391 →
Application: 09/172,546 →
Ion Extraction Process for Single Side Wafers
Patent: 6,177,279 →
Application: 09/191,715 →
Process of Stacking and Melting Polycrystalline Silicon for High Quality Single Crystal Production
Patent: 6,284,040 →
Application: 09/229,540 →
Heat Shield for Crystal Puller
Patent: 6,053,974 →
Application: 09/234,144 →
Tungsten Doped Crucible and Method for Preparing Same
Patent: 6,187,089 →
Application: 09/245,238 →
An Epitaxial Silicon Wafer with Intrinsic Gettering
Patent: 6,284,384 →
Application: 09/250,908 →
Polishing Pad and Process for Forming Same
Patent: 6,179,950 →
Application: 09/252,698 →
Heat Shield Assembly for Crystal Puller
Patent: 6,197,111 →
Application: 09/258,478 →
Pressure Equalization System for Chemical Vapor Dfposition Reactors
Patent: 6,086,678 →
Application: 09/262,417 →
Method and System of Measuring Waviness in Silicon Wafers
Patent: 6,057,170 →
Application: 09/264,230 →
Apparatus for Controlling the Oxygen Content in Silicon Wafers Heavily Doped with Antimony or Arsenic
Patent: 6,214,109 →
Application: 09/268,968 →
Vacancy Dominated, Defect-Free Silicon
Patent: 6,379,642 →
Application: 09/270,366 →
Method for Processing a Semiconductor Wafer
Patent: 6,227,944 →
Application: 09/276,278 →
Process for Reconditioning Polishing Pads
Patent: 6,120,350 →
Application: 09/282,391 →
Method of Slicing Silicon Wafers for Laser Marking
Patent: 6,112,738 →
Application: 09/285,337 →
Method and System of Controlling Taper Growth in a Semiconductor Crystal Growth Process
Patent: 6,241,818 →
Application: 09/287,916 →
Method of Conditioning Wafer Polishing Pads
Patent: 6,135,863 →
Application: 09/295,127 →
Cable Assembly for Crystal Puller
Patent: 6,203,614 →
Application: 09/322,824 →
Method for the Preparation of an Epitaxial Silicon Wafer with Intrinsic Gettering
Application: 09/332,745 →
Publication: US 2003/0051656
Crystal Puller for Growing Low Defect Density, Self-Interstitial Dominated Silicon
Application: 09/344,003 →
Publication: US 2001/0045184
Process for Preparing Defect Free Silicon Crystals Which Allows for Variability in Process Conditions
Patent: 6,312,516 →
Application: 09/344,036 →
Publication: US 2001/0003268
Process for Growth of Defect Free Silicon Crystals of Arbitrarily Large Diameters
Patent: 6,328,795 →
Application: 09/344,709 →
Publication: US 2001/0008114
Process for Fabricating Semiconductor Wafers with External Gettering
Patent: 6,338,805 →
Application: 09/352,980 →
Method of Processing Semiconductor Wafers
Patent: 6,114,245 →
Application: 09/356,616 →
Process for Reducing Waviness in Semiconductor Wafers
Patent: 6,200,908 →
Application: 09/366,815 →
Non-Uniform Minority Carrier Lifetime Distributions in High Performance Silicon Power Devices
Patent: 6,828,690 →
Application: 09/366,850 →
Method and Apparatus for Accurately Pulling a Crystal
Application: 09/372,897 →
Non-Oxygen Precipitating Czochralski Silicon Wafers
Patent: 6,336,968 →
Application: 09/379,383 →
Process for Preparing an Ideal Oxygen Precipitating Silicon Wafer
Patent: 6,191,010 →
Application: 09/384,669 →
Thermally Annealed Wafers Having Improved Internal Gettering
Patent: 6,361,619 →
Application: 09/385,108 →
Apparatus for Supporting a Semiconductor Ingot During Growth
Patent: 6,238,483 →
Application: 09/386,979 →
Silicon on Insulator Structure from Low Defect Density Single Crystal Silicon
Patent: 6,236,104 →
Application: 09/387,288 →
Method of Processing Semiconductor Wafers to Build in Back Surface Damage
Patent: 6,214,704 →
Application: 09/404,428 →
Electrical Resistance Heater for Crystal Growing Apparatus
Patent: 6,285,011 →
Application: 09/416,432 →
Thermally Annealed, Low Defect Density Single Crystal Silicon
Patent: 6,416,836 →
Application: 09/416,998 →
Epitaxial Silicon Wafers Substantially Free of Grown - in Defects
Patent: 6,284,039 →
Application: 09/417,610 →
Method and System for Measuring Polycrystalline Chunk Size and Distribution in the Charge of a Czochralski Process
Patent: 6,589,332 →
Application: 09/419,151 →
Method of Controlling Growth of a Semiconductor Crystal to Automatically Transition from Taper Growth to Target Diameter Growth
Patent: 6,203,611 →
Application: 09/421,187 →
Apparatus for Cleaning Semiconductor Wafers
Patent: 6,318,389 →
Application: 09/430,654 →
Method of Determining Performance Characteristics of Polishing Pads
Patent: 6,293,139 →
Application: 09/432,928 →
Process for Etching Semiconductor Wafers
Application: 09/438,551 →
Polishing Process for Manufacturing Dopant-Striation-Free Polished Silicon Wafers
Patent: 6,189,546 →
Application: 09/473,669 →
Method for Revealing Agglomerated Intrinsic Point Defects in Semiconductor Crystals
Patent: 6,638,357 →
Application: 09/475,320 →
Publication: US 2002/0007779
Semiconductor Wafer Manufacturing Process
Patent: 6,376,395 →
Application: 09/481,080 →
Publication: US 2002/0004305
Continuous oxidation process for crystal pulling Apparatus
Patent: 6,315,828 →
Application: 09/489,481 →
Method for controlling growth of a silicon crystal to minimize growth rate and diameter deviations
Application: 09/495,563 →
Method of Controlling Diameter of a Silicon Crystal in a Locked Seed Lift Growth Process
Patent: 6,776,840 →
Application: 09/502,340 →
Process for producing a silicon melt
Patent: 6,344,083 →
Application: 09/503,566 →
Process for Reducing Surface Variations for Polished Wafer
Patent: 6,479,386 →
Application: 09/505,269 →
Semiconductor Wafer Manufacturing Process
Patent: 6,376,335 →
Application: 09/506,105 →
Method for Wafer Processing
Patent: 6,514,423 →
Application: 09/507,811 →
Apparatus and process for high temperature wafer edge polishing
Patent: 6,257,954 →
Application: 09/511,030 →
Silicon wafering process flow
Patent: 6,294,469 →
Application: 09/512,111 →
Method of processing semiconductor wafers
Application: 09/512,529 →
Barium doping of molten silicon for use in crystal growing process
Patent: 6,319,313 →
Application: 09/521,288 →
Strontium doping of molten silicon for use in crystal growing process
Patent: 6,350,312 →
Application: 09/521,525 →
Ion extraction apparatus for single side wafers
Patent: 6,164,299 →
Application: 09/525,984 →
Method for the Detection of Processing-Induced Defects in a Silicon Wafer
Patent: 6,600,557 →
Application: 09/543,192 →
Process for etching a silocon wafer
Application: 09/543,194 →
Modified Susceptor for Use in Chemical Vapor Deposition Process
Patent: 6,444,027 →
Application: 09/566,890 →
Multi-stage arsenic doping process to achieve low resistivity in silicon crystal grown by czochralski method
Patent: 6,312,517 →
Application: 09/568,751 →
Process for Preparing Single Crystal Silicon Having Uniform Thermal History
Patent: 6,458,202 →
Application: 09/596,493 →
Single-operation method of cleaning semiconductors after final polishing
Patent: 6,230,720 →
Application: 09/606,728 →
Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
Patent: 6,339,016 →
Application: 09/607,389 →
Method and Apparatus for Forming a Silicon Wafer with a Denuded Zone
Patent: 6,599,815 →
Application: 09/607,391 →
Method and apparatus for forming a silicon wafer with a denuded zone
Application: 09/608,302 →
Non-Contaminating Gas-Tight Valve for Semiconductor Applications
Patent: 6,435,474 →
Application: 09/608,304 →
Method of polishing a semiconductor wafer
Patent: 6,361,407 →
Application: 09/631,089 →
Method for processing a semiconductor wafer using double-side polishing
Application: 09/633,532 →
Method and Apparatus for a Wafer Carrier Having an Insert
Patent: 6,454,635 →
Application: 09/633,958 →
Process for suppressing the nucleation and/or growth of interstitial type defects by controlling the cooling rate through nucleation
Application: 09/661,745 →
Method for Producing Czochralski Silicon Free of Agglomerated Self-Interstitial Defects
Patent: 6,635,587 →
Application: 09/661,821 →
Process for Detecting Agglomerated Intrinsic Point Defects by Metal Decoration
Patent: 6,391,662 →
Application: 09/661,822 →
Multi-Piece Extruded Link Arm
Patent: 6,619,533 →
Application: 09/667,909 →
Method and Apparatus to Place Wafers into and Out of Machine
Patent: 6,398,631 →
Application: 09/681,160 →
Heat Shield Assembly for Crystal Pulling Apparatus
Patent: 6,482,263 →
Application: 09/684,266 →
Electrical Resistance Heater and Method for Crystal Growing Apparatus
Patent: 6,503,322 →
Application: 09/691,994 →
Ideal Oxygen Precipitating Silicon Wafers and Oxygen Out-Diffusion-Less Process Therefor
Patent: 6,586,068 →
Application: 09/704,893 →
A Process for the Preparation of an Ideal Oxygen Precipitating Silicon Wafer Having an Asymmetrical Vacancy Concentration Profile Capable of Forming an Enhanced Denuded Zone
Patent: 6,579,779 →
Application: 09/704,900 →
Low Defect Density, Ideal Oxygen Precipitating Silicon
Patent: 6,555,194 →
Application: 09/705,092 →
Method for Preparing Molten Silicon Melt from Polycrystalline Silicon Charge
Patent: 6,454,851 →
Application: 09/711,198 →
Defect Classification Using Scattered Light Intensities
Patent: 6,515,742 →
Application: 09/723,847 →
Process for collecting and analyzing the content of a liquid in an automated on-line bath analysis system
Application: 09/730,171 →
Publication: US 2001/0000322
Process for collecting and analyzing the content of a liquid in an automated on-line bath analysis system
Application: 09/730,172 →
Publication: US 2001/0000334
Silicon on insulator structure having a low defect density handle wafer and process for the preparation thereof
Patent: 6,342,725 →
Application: 09/737,715 →
Publication: US 2001/0030348
Semiconductor Wafer Holder
Patent: 6,497,403 →
Application: 09/751,897 →
Publication: US 2002/0084566
Epitaxial Silicon Wafer Free from Autodoping and Backside Halo and a Method and Apparatus for the Preparation Thereof
Patent: 6,596,095 →
Application: 09/752,222 →
Publication: US 2001/0037761
Crystal puller and method for growing single crystal semiconductor material
Application: 09/757,121 →
Publication: US 2002/0124792
Method and apparatus for reconditioning a shipping container
Application: 09/769,773 →
Publication: US 2002/0140130
Statistical control method for proportions with small sample sizes
Application: 09/797,391 →
Publication: US 2002/0052702
Crystal Puller and Method for Growing Monocrystalline Silicon Ingots
Patent: 6,447,601 →
Application: 09/811,982 →
Heat Shield Assembly for Crystal Puller
Patent: 6,579,362 →
Application: 09/815,508 →
Publication: US 2002/0134302
Low Defect Density, Self-Interstitial Dominated Silicon
Patent: 6,409,826 →
Application: 09/816,015 →
Publication: US 2001/0025597
Method for evaluating a wafer cleaning operation
Application: 09/817,929 →
Publication: US 2002/0142617
Low Defect Density Silicon and a Process for Producing Low Defect Density Silicon Wherein V/G0 Is Controlled by Controlling Heat Transfer at the Melt/Solid Interface
Patent: 6,409,827 →
Application: 09/833,777 →
Publication: US 2001/0020437
Method of Calibrating a Semiconductor Wafer Drying Apparatus
Patent: 6,649,883 →
Application: 09/834,118 →
Publication: US 2002/0148826
System and method for reconditioning a chiller
Application: 09/834,819 →
Publication: US 2002/0148238
Process for Growing Silicon Crystals Which Allows for Variability in Process Conditions While Suppressing the Formation of Agglomerated Intrinsic Point Defects
Patent: 6,500,255 →
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Publication: US 2001/0027743
Epitaxial Silicon Wafer with Intrinsic Gettering and a Method for the Preparation Thereof
Patent: 6,537,655 →
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Publication: US 2001/0032581
Barium Doping of Molten Silicon for Use in Crystal Growing Process
Patent: 6,461,427 →
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Publication: US 2001/0032580
Method for Calibrating Nanotopographic Measuring Equipment
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Publication: US 2002/0185053
Method for Storing Carrier for Polishing Wafer
Patent: 6,379,226 →
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Process for Preparing Low Defect Density Silicon Using High Growth Rates
Patent: 6,689,209 →
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Publication: US 2002/0053315
An Epitaxial Wafer Substantially Free of Grown-in Defects
Patent: 6,565,649 →
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Publication: US 2001/0039916
Crystal Puller and Method for Growing Monocrystalline Silicon Ingots
Patent: 6,663,709 →
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Publication: US 2002/0195045
Process for etching silicon wafers
Application: 09/896,945 →
Publication: US 2002/0034881
Method and Apparatus for Processing a Semiconductor Wafer Using Novel Final Polishing Method
Patent: 6,709,981 →
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Publication: US 2002/0052064
Process for the Preparation of Non-Oxygen Precipitating Czochralski Silicon Wafers
Patent: 6,432,197 →
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Publication: US 2002/0000185
Process for preparing low defect density silicon using high growth rates
Application: 60/245,610 →
High throughput epitaxial growth by chemical vapor deposition
Application: 60/249,854 →
Method for the production of low defect density silicon
Application: 60/252,715 →
Process for reclaiming semiconductor wafers and reclaimed wafers
Application: 60/256,783 →
Process for monitoring the gaseous environment of a crystal puller for semiconductor growth
Application: 60/257,646 →
Apparatus and process for the preparation of low-iron single crystal silicon substantially free of agglomerated intrinsic point defects
Application: 60/258,296 →
Semiconductor wafer manufacturing process
Application: 60/258,414 →
Silicon wafers substantially free of oxidation induced stacking faults
Application: 60/259,000 →
Process for preparing single crystal silicon having improved gate oxide integrity
Application: 60/259,362 →
Low defect density silicon substantially free of oxidation induced stacking faults
Application: 60/264,415 →
Process for controlling thermal history of vacancy-dominated, single crystal silicon
Application: 60/273,980 →
Thermal annealing process for producing silicon wafers with improved surface characteristics
Application: 60/280,035 →
Solution compositions and process for etching silicon
Application: 60/280,680 →
Control of thermal donor formation in high resistivity CZ silicon
Application: 60/283,103 →
Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
Application: 60/285,180 →
Process for producing silicon on insulator structure having intrinsic gettering by ion implantation
Application: 60/300,208 →
Silicon on insulator structure from high resistivity CZ silicon
Application: 60/300,364 →
Process for making wafers for ion implantation monitoring
Application: 60/302,907 →
Nitrogen-doped silicon substantially free of oxidation induced stacking faults
Application: 60/308,521 →
Method of eliminating near-surface bubbles in quartz crucibles
Application: 60/309,645 →
Controlled crown growth process for Czochralski single crystal silicon
Application: 60/312,573 →
Process for eliminating neck dislocations during Czochralski crystal growth
Application: 60/315,846 →
Analytical method to measure nitrogen concentration in single crystal silicon
Application: 60/323,827 →
Process for preparing an arsenic-doped single crystal silicon using a consumable dopant feeder
Application: 60/325,622 →
Process for preparing an arsenic-doped single crystal silicon using a non-consumable dopant feeder
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Related Assignments (3)
Other recorded transfers of the patents in this record — the chain of ownership.
Security Agreement Oct 1, 2012
From: NVT, LLC; SUN EDISON LLC; SOLAICX, INC.; MEMC ELECTRONIC MATERIALS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 029057/0810 →
Release of Security Interest Dec 26, 2013
From: BANK OF AMERICA, N.A.
To: ENFLEX CORPORATION; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0031 →
Release of Security Interest Dec 26, 2013
From: GOLDMAN SACHS BANK USA
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0092 →