Granted Patent
Utility
US 6,600,557 · App. 09/543,192
Method for the detection of processing-induced defects in a silicon wafer
Inventors:
Anca Stefanescu, Zhijian Pei, Henry F. Erk, Tom Doane
Patented Case
View Patent ↗
Granted: Jul 29, 2003
Filed: Apr 5, 2000
Inventors
Anca Stefanescu
Zhijian Pei
Henry F. Erk
Tom Doane
Assignee (at issue)
MEMC Electronic Materials, Inc.
This patent predates the USPTO's electronic file wrapper — prosecution documents from this era exist only in the Patent Office's paper records. A certified copy of the file history can be ordered from the USPTO's paper archives.