IP Library › Granted Patent US 6,500,255
Granted Patent Utility
US 6,500,255 · Confirmation No. 7075

PROCESS FOR GROWING SILICON CRYSTALS WHICH ALLOWS FOR VARIABILITY IN PROCESS CONDITIONS WHILE SUPPRESSING THE FORMATION OF AGGLOMERATED INTRINSIC POINT DEFECTS

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2014-01-30 OATH Oath or Declaration filed 65 View
2013-12-26 OATH Oath or Declaration filed 29 View
2013-12-26 OATH Oath or Declaration filed 42 View
2008-06-02 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2008-06-02 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2008-05-21 PA.. Power of Attorney 3 View
2008-05-21 N417 Electronic Filing System Acknowledgment Receipt 2 View
2006-08-22 COCIN Request for Certificate of Correction 2 View
2006-08-22 WFEE Fee Worksheet (SB06) 2 View
2006-08-22 N417 Electronic Filing System Acknowledgment Receipt 2 View
2001-05-11 TRNA Transmittal of New Application 4 View
2001-05-11 ADS Application Data Sheet 2 View
2001-05-11 SPEC Specification 48 View
2001-05-11 CLM Claims 5 View
2001-05-11 ABST Abstract 1 View
2001-05-11 DRW Drawings-only black and white line drawings 6 View
2001-05-11 OATH Oath or Declaration filed 6 View
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Quick Facts
Patent No.
US 6,500,255
App. No.
09/853,232
Filed
2001-05-11
Granted
2002-12-31
Pub. No.
US20010027743A1
Art Unit
1765
PTA
-93 days