Patent Assignment
Reel/Frame 013964/0378
Security Agreement
Recorded: 2003-03-19
Received: 2003-08-07
Pages: 23
Assignors
MEMC ELECTRONIC MATERIALS, INC.
Executed: 2002-03-03
MEMC PASADENA, INC.
Executed: 2002-03-03
PLASMASIL, L.L.C.
Executed: 2002-03-03
MEMC HOLDINGS CORPORATION
Executed: 2003-03-03
MEMC INTERNATIONAL, INC.
Executed: 2003-03-03
MEMC SOUTHWEST INC.
Executed: 2003-03-03
SIBOND, L.L.C.
Executed: 2003-03-03
Assignee
CITICORP USA, INC.
2 PENNS WAY, SUITE 200, NEW CASTLE, DE, 19720, UNITED STATES
Covered Properties
(60)
Exhalation Evacuator
Application:
10/388,089 →
Ideal Oxygen Precipitating Silicon Wafers with Nitrogen/Carbon Stabilized Oxygen Precipitate Nucleation Centers and Process for Making the Same
Application:
10/328,481 →
Device and Method for Plasma Processing, and Slow-Wave Plate
Application:
10/296,619 →
Process for the Removal of Copper from Polished Boron-Doped Silicon Wafers
Application:
10/294,325 →
Process for removing metallic impurities from silicon carbide coated components of a silicon single crystal pulling apparatus
Application:
60/425,547 →
Crystal-puller for growth of a monocrystalline ingot and a method for growing a monocrystallline ingot
Application:
60/425,556 →
Controlled Neck Growth Process for Single Crystal Silicon
Application:
10/204,654 →
Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer
Application:
10/277,660 →
Analytical Method to Measure Nitrogen Concentration in Single Crystal Silicon
Application:
10/252,479 →
Modified Susceptor for Use in Chemical Vapor Deposition Process
Application:
10/229,415 →
Silicon on Insulator Struture Having an Epitaxial Layer and Intrinsic Gettering
Application:
10/177,444 →
Low Defect Density Epitaxial Wafer and a Process for the Preparation Thereof
Application:
10/135,597 →
Thermal Annealing Process for Producing Silicon Wafers with Improved Surface Characteristics
Application:
10/113,378 →
Method and apparatus for slicing semiconductor wafers
Application:
60/362,379 →
Thermal Annealing Process for Producing Low Defect Density Single Crystal Silicon
Application:
10/073,506 →
Process for Producing Thermally Annealed Wafers Having Improved Internal Gettering
Application:
10/067,070 →
Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults
Application:
10/054,629 →
Apparatus for forming an epitaxial silicon wafer with a denuded zone
Application:
10/050,026 →
Solution Composition and Process for Etching Silicon
Application:
10/038,550 →
SOI structure having a device layer which is vacancy dominated and substantially free fo agglomerated vacancy type defects
Application:
10/038,084 →
Semiconductor wafer manufacturing process
Application:
10/036,917 →
Epitaxial silicon wafers with nitrogen/carbon stabilized oxygen precipitation nuclei and process for making the same
Application:
60/345,178 →
Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates
Application:
60/345,165 →
Process for Reclaiming Semiconductor Wafers and Reclaimed Wafers
Application:
10/022,967 →
Process for producing silicon on insulator structure having intrinsic gettering by ion implantation
Application:
60/337,623 →
Process for Making Wafers for Ion Implantation Monitoring
Application:
09/989,200 →
Method for the Production of Low Defect Density Silicon
Application:
09/972,608 →
Process for preparing an arsenic-doped single crystal silicon using a consumable dopant feeder
Application:
60/325,622 →
Process for preparing an arsenic-doped single crystal silicon using a non-consumable dopant feeder
Application:
60/325,660 →
Analytical method to measure nitrogen concentration in single crystal silicon
Application:
60/323,827 →
Process for Preparing a Silicon Melt
Application:
09/943,600 →
Process for eliminating neck dislocations during Czochralski crystal growth
Application:
60/315,846 →
Double-walled bottle
Application:
09/938,559 →
Controlled crown growth process for Czochralski single crystal silicon
Application:
60/312,573 →
Method of eliminating near-surface bubbles in quartz crucibles
Application:
60/309,645 →
Nitrogen-doped silicon substantially free of oxidation induced stacking faults
Application:
60/308,521 →
Process for making wafers for ion implantation monitoring
Application:
60/302,907 →
Process for producing silicon on insulator structure having intrinsic gettering by ion implantation
Application:
60/300,208 →
Silicon on insulator structure from high resistivity CZ silicon
Application:
60/300,364 →
Method for Storing Carrier for Polishing Wafer
Application:
09/869,084 →
Carrier for Cleaning Silicon Wafers
Application:
09/807,907 →
An Epitaxial Wafer Substantially Free of Grown-in Defects
Application:
09/874,487 →
Barium Doping of Molten Silicon for Use in Crystal Growing Process
Application:
09/859,826 →
Epitaxial Silicon Wafer with Intrinsic Gettering and a Method for the Preparation Thereof
Application:
09/859,094 →
Process for Growing Silicon Crystals Which Allows for Variability in Process Conditions While Suppressing the Formation of Agglomerated Intrinsic Point Defects
Application:
09/853,232 →
Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
Application:
60/285,180 →
Low Defect Density Silicon and a Process for Producing Low Defect Density Silicon Wherein V/G0 Is Controlled by Controlling Heat Transfer at the Melt/Solid Interface
Application:
09/833,777 →
Solution compositions and process for etching silicon
Application:
60/280,680 →
Thermal annealing process for producing silicon wafers with improved surface characteristics
Application:
60/280,035 →
Low Defect Density, Self-Interstitial Dominated Silicon
Application:
09/816,015 →
Heat Shield Assembly for Crystal Puller
Application:
09/815,508 →
Crystal Puller and Method for Growing Monocrystalline Silicon Ingots
Application:
09/811,982 →
Door Mechanism
Application:
09/744,166 →
Process for controlling thermal history of vacancy-dominated, single crystal silicon
Application:
60/273,980 →
Statistical control method for proportions with small sample sizes
Application:
09/797,391 →
Method and Apparatus to Place Wafers into and Out of Machine
Application:
09/681,160 →
Low defect density silicon substantially free of oxidation induced stacking faults
Application:
60/264,415 →
Method and apparatus for reconditioning a shipping container
Application:
09/769,773 →
Crystal puller and method for growing single crystal semiconductor material
Application:
09/757,121 →
Process for preparing single crystal silicon having improved gate oxide integrity
Application:
60/259,362 →