Device and method for plasma processing, and slow-wave plate
View Patent ↗In a microwave plasma processing apparatus that uses a radial line slot antenna, a slot plate ( 16 ) is formed by a material having a thermal expansion rate close to the wave retardation plate ( 18 ), or depositing a metal on a dielectric plate constituting the wave retardation plate ( 18 ). An intimate contact between the wave retardation plate and a slot plate constituting a microwave radiation surface is improved so as to prevent an abnormal electric discharge.
1. A plasma processing apparatus, comprising:
a processing vessel defined by an outer wall and having a stage for holding a substrate to be processed;
an evacuation system coupled to said processing vessel;
a plasma gas supplying part supplying plasma gas to said processing vessel; and
a microwave antenna provided on said processing vessel in correspondence to said plasma gas supplying part and supplied with an electric power from a coaxial waveguide,
wherein said microwave antenna comprises: a radial line back surface metal plate having openings; a microwave radiation surface provided on said radial line back surface metal plate so as to cover said openings and having a plurality of slots; and a dielectric plate provided between said radial line back surface metal plate and said microwave radiation surface,
wherein said microwave radiation surface is formed by an electrically conductive material, wherein a difference in a coefficient of thermal expansion between said dielectric plate said electrically conductive material within 10% with respect to a coefficient of thermal expansion of said dielectric plate;
wherein said dielectric plate is formed of alumina ceramics, and said microwave radiation surface is formed of an alloy of Cu and W.
2. The plasma processing apparatus as claimed in claim 1 , wherein said dielectric plate is made of Al 2 O 3 .
3. The plasma processing apparatus as claimed in claim 1 , wherein said microwave radiation surface comprises a base member of a conductive material and a plated layer formed of Ni, Au, Ag or Cu and covering a surface of said base member.
4. The plasma processing apparatus as claimed in claim 3 , wherein said plated layer has a thickness of equal to or greater than 6 μm.
5. The plasma processing apparatus as claimed in claim 1 , wherein said microwave radiation surface and said dielectric plate are bonded by a ceramic adhesive.
6. The plasma processing apparatus as claimed in claim 1 , wherein said microwave radiation surface and said dielectric plate are bonded by an electrically conductive adhesive.