IP Library Granted Patent US 6,409,827
Granted Patent Utility
US 6,409,827 · Confirmation No. 3926

LOW DEFECT DENSITY SILICON AND A PROCESS FOR PRODUCING LOW DEFECT DENSITY SILICON WHEREIN V/G0 IS CONTROLLED BY CONTROLLING HEAT TRANSFER AT THE MELT/SOLID INTERFACE

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Code Description Pages PDF
2014-01-30 OATH Oath or Declaration filed 65 View
2013-12-26 OATH Oath or Declaration filed 29 View
2013-12-26 OATH Oath or Declaration filed 42 View
2008-06-06 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2008-06-06 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2008-05-20 PA.. Power of Attorney 3 View
2008-05-20 N417 Electronic Filing System Acknowledgment Receipt 2 View
2001-04-12 TRNA Transmittal of New Application 4 View
2001-04-12 ADS Application Data Sheet 2 View
2001-04-12 A.PE Preliminary Amendment 12 View
2001-04-12 SPEC Specification 33 View
2001-04-12 CLM Claims 5 View
2001-04-12 ABST Abstract 1 View
2001-04-12 DRW Drawings-only black and white line drawings 17 View
2001-04-12 OATH Oath or Declaration filed 3 View
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Quick Facts
Patent No.
US 6,409,827
App. No.
09/833,777
Filed
2001-04-12
Granted
2002-06-25
Pub. No.
US20010020437A1
Art Unit
1765
PTA
-96 days