Patent Assignment
Reel/Frame 012280/0161
Security Agreement
Recorded: 2001-11-21
Received: 2001-11-21
Pages: 39
Assignors
MEMC ELECTRONIC MATERIALS, INC.
Executed: 2001-11-13
MEMC INTERNATIONAL, INC.
Executed: 2001-11-13
MEMC PASADENA, INC.
Executed: 2001-11-13
MEMC SOUTHWEST INC.
Executed: 2001-11-13
PLASMASIL, L.L.C.
Executed: 2001-11-13
SIBOND, L.L.C.
Executed: 2001-11-13
Assignee
CITICORP USA, INC.
ATTENTION OF DAVID GRABAR, 2 PENNS WAY, SUITE 200, NEW CASTLE, DE, 19720, UNITED STATES
Covered Properties
(41)
Fragment of Plasma Protease C1 Inhibitor
Application:
09/991,799 →
Hand Stamp and a Method of Assembling Hand Stamp
Application:
09/971,253 →
Process for preparing an arsenic-doped single crystal silicon using a consumable dopant feeder
Application:
60/325,622 →
Process for preparing an arsenic-doped single crystal silicon using a non-consumable dopant feeder
Application:
60/325,660 →
Analytical method to measure nitrogen concentration in single crystal silicon
Application:
60/323,827 →
Process for eliminating neck dislocations during Czochralski crystal growth
Application:
60/315,846 →
Controlled crown growth process for Czochralski single crystal silicon
Application:
60/312,573 →
Process for the Preparation of Non-Oxygen Precipitating Czochralski Silicon Wafers
Application:
09/929,585 →
Method and Apparatus for Processing a Semiconductor Wafer Using Novel Final Polishing Method
Application:
09/928,559 →
Method of eliminating near-surface bubbles in quartz crucibles
Application:
60/309,645 →
Process for making wafers for ion implantation monitoring
Application:
60/302,907 →
Process for etching silicon wafers
Application:
09/896,945 →
Crystal Puller and Method for Growing Monocrystalline Silicon Ingots
Application:
09/892,002 →
Process for producing silicon on insulator structure having intrinsic gettering by ion implantation
Application:
60/300,208 →
Silicon on insulator structure from high resistivity CZ silicon
Application:
60/300,364 →
Method for Storing Carrier for Polishing Wafer
Application:
09/869,084 →
An Epitaxial Wafer Substantially Free of Grown-in Defects
Application:
09/874,487 →
Process for Preparing Low Defect Density Silicon Using High Growth Rates
Application:
09/871,255 →
Method for Calibrating Nanotopographic Measuring Equipment
Application:
09/865,083 →
Barium Doping of Molten Silicon for Use in Crystal Growing Process
Application:
09/859,826 →
Epitaxial Silicon Wafer with Intrinsic Gettering and a Method for the Preparation Thereof
Application:
09/859,094 →
Process for Growing Silicon Crystals Which Allows for Variability in Process Conditions While Suppressing the Formation of Agglomerated Intrinsic Point Defects
Application:
09/853,232 →
Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
Application:
60/285,180 →
System and method for reconditioning a chiller
Application:
09/834,819 →
Low Defect Density Silicon and a Process for Producing Low Defect Density Silicon Wherein V/G0 Is Controlled by Controlling Heat Transfer at the Melt/Solid Interface
Application:
09/833,777 →
Method of Calibrating a Semiconductor Wafer Drying Apparatus
Application:
09/834,118 →
Control of thermal donor formation in high resistivity CZ silicon
Application:
60/283,103 →
Solution compositions and process for etching silicon
Application:
60/280,680 →
Thermal annealing process for producing silicon wafers with improved surface characteristics
Application:
60/280,035 →
Method for evaluating a wafer cleaning operation
Application:
09/817,929 →
Low Defect Density, Self-Interstitial Dominated Silicon
Application:
09/816,015 →
Heat Shield Assembly for Crystal Puller
Application:
09/815,508 →
Crystal Puller and Method for Growing Monocrystalline Silicon Ingots
Application:
09/811,982 →
Process for controlling thermal history of vacancy-dominated, single crystal silicon
Application:
60/273,980 →
Statistical control method for proportions with small sample sizes
Application:
09/797,391 →
Method and Apparatus to Place Wafers into and Out of Machine
Application:
09/681,160 →
Low defect density silicon substantially free of oxidation induced stacking faults
Application:
60/264,415 →
Method and apparatus for reconditioning a shipping container
Application:
09/769,773 →
Crystal puller and method for growing single crystal semiconductor material
Application:
09/757,121 →
Stable conjugated polymer electrochromic devices incorporating ionic liquids
Application:
60/259,783 →
Process for preparing single crystal silicon having improved gate oxide integrity
Application:
60/259,362 →