IP Library Granted Patent US 6,689,209
Granted Patent Utility
US 6,689,209 · Confirmation No. 1505

PROCESS FOR PREPARING LOW DEFECT DENSITY SILICON USING HIGH GROWTH RATES

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Code Description Pages PDF
2014-01-30 OATH Oath or Declaration filed 65 View
2013-12-26 OATH Oath or Declaration filed 29 View
2013-12-26 OATH Oath or Declaration filed 42 View
2003-09-12 IFEE Issue Fee Payment (PTO-85B) 1 View
2001-05-31 TRNA Transmittal of New Application 4 View
2001-05-31 ADS Application Data Sheet 2 View
2001-05-31 SPEC Specification 28 View
2001-05-31 CLM Claims 8 View
2001-05-31 ABST Abstract 1 View
2001-05-31 DRW Drawings-only black and white line drawings 4 View
2001-05-31 LET. Miscellaneous Incoming Letter 1 View
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Quick Facts
Patent No.
US 6,689,209
App. No.
09/871,255
Filed
2001-05-31
Granted
2004-02-10
Pub. No.
US20020053315A1
Art Unit
1765
PTA
-60 days