IP Library Granted Patent US 6,409,826
Granted Patent Utility
US 6,409,826 · Confirmation No. 9102

LOW DEFECT DENSITY, SELF-INTERSTITIAL DOMINATED SILICON

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Code Description Pages PDF
2014-01-30 OATH Oath or Declaration filed 65 View
2013-12-26 OATH Oath or Declaration filed 29 View
2013-12-26 OATH Oath or Declaration filed 42 View
2008-06-02 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2008-06-02 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2008-05-20 PA.. Power of Attorney 3 View
2008-05-20 N417 Electronic Filing System Acknowledgment Receipt 2 View
2005-07-26 COCOUT Certificate of Correction - Post Issue Communication 1 View
2001-03-23 TRNA Transmittal of New Application 4 View
2001-03-23 ADS Application Data Sheet 3 View
2001-03-23 SPEC Specification 51 View
2001-03-23 CLM Claims 4 View
2001-03-23 ABST Abstract 1 View
2001-03-23 DRW Drawings-only black and white line drawings 28 View
2001-03-23 OATH Oath or Declaration filed 4 View
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Quick Facts
Patent No.
US 6,409,826
App. No.
09/816,015
Filed
2001-03-23
Granted
2002-06-25
Pub. No.
US20010025597A1
Art Unit
1765
PTA
-96 days