IP Library › Granted Patent US 6,652,646
Granted Patent Utility
US 6,652,646 · Confirmation No. 1268

PROCESS FOR GROWING A SILICON CRYSTAL SEGMENT SUBSTANTIALLY FREE FROM AGGLOMERATED INTRINSIC POINT DEFECTS WHICH ALLOWS FOR VARIABILITY IN THE PROCESS CONDITIONS

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2014-01-30 OATH Oath or Declaration filed 65 View
2013-12-26 OATH Oath or Declaration filed 29 View
2013-12-26 OATH Oath or Declaration filed 42 View
2008-06-02 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2008-06-02 N570 Communication - Re: Power of Attorney (PTOL-308) 1 View
2008-05-21 PA.. Power of Attorney 3 View
2008-05-21 N417 Electronic Filing System Acknowledgment Receipt 2 View
2003-09-16 IFEE Issue Fee Payment (PTO-85B) 2 View
2002-09-30 TRNA Transmittal of New Application 4 View
2002-09-30 ADS Application Data Sheet 3 View
2002-09-30 SPEC Specification 48 View
2002-09-30 CLM Claims 1 View
2002-09-30 ABST Abstract 1 View
2002-09-30 DRW Drawings-only black and white line drawings 6 View
2002-09-30 OATH Oath or Declaration filed 6 View
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Quick Facts
Patent No.
US 6,652,646
App. No.
10/260,239
Filed
2002-09-30
Granted
2003-11-25
Pub. No.
US20030116081A1
Art Unit
1765
PTA
-1 days