IP Library › Granted Patent US 6,555,194
Granted Patent Utility
US 6,555,194 · App. 09/705,092

Process for producing low defect density, ideal oxygen precipitating silicon

Inventors: Robert Falster, Joseph C. Holzer, Marco Cornara, Daniela Gambaro, Massimiliano Olmo, Steve A. Markgraf, Paolo Mutti, Seamus A. McQuaid, Bayard K. Johnson
Patented Case View Patent ↗
Granted: Apr 29, 2003 Filed: Nov 2, 2000
Inventors
Robert Falster
Joseph C. Holzer
Marco Cornara
Daniela Gambaro
Massimiliano Olmo
Steve A. Markgraf
Paolo Mutti
Seamus A. McQuaid
Bayard K. Johnson
Assignee (at issue)
MEMC Electronic Materials, Inc.

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Quick Facts
Patent No.
US 6,555,194
App. No.
09/705,092
Filed
2000-11-02
Granted
2003-04-29
Kind
B1