IP Library Granted Patent US 8,712,575
Granted Patent B2
US 8,712,575 · App. 13/049,536 · Granted Apr 29, 2014

Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder

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Quick Facts
Patent No.
US 8,712,575
App. No.
13/049,536
Granted
Apr 29, 2014
Kind
B2
Abstract

Systems and methods are disclosed for modulating the hydrostatic pressure in a double side wafer grinder having a pair of grinding wheels. The systems and methods use a processor to measure the amount of electrical current drawn by the grinding wheels. Pattern detection software is used to predict a grinding stage based on the measured electrical current. The hydrostatic pressure is changed by flow control valves at each stage to change the clamping pressure applied to the wafer and to thereby improve nanotopology in the processed wafer.

Claims (21)

1. A method of processing a semiconductor wafer using a double side grinder of the type that holds the wafer between a pair of grinding wheels and a pair of hydrostatic pads during a grinding operation, the method comprising:

establishing a first hydrostatic pressure in the hydrostatic pads to initially clamp the wafer during a first stage of the grinding operation,

measuring the amount of electrical current used by the grinding wheels of the double side grinder,

determining the stage of the grinding operation based on the measured amount of electrical current used by the grinding wheels of the double side grinder,

reducing the hydrostatic pressure to a second hydrostatic pressure lower than the first pressure during grinding of the wafer in a second stage of the grinding operation, and

increasing the hydrostatic pressure to a third hydrostatic pressure during a third stage of the grinding operation to clamp the wafer and to thereby improve nanotopology in the processed wafer.

2. The method of claim 1 wherein the third hydrostatic pressure is substantially equal to the first hydrostatic pressure.

3. The method of claim 1 wherein the wafer is substantially clamped by the grinding wheels during grinding of the wafer.

4. The method of claim 1 wherein the hydrostatic pressure is changed by use of flow control valves.

5. The method of claim 1 wherein the wafer is held in a substantially vertical plane.

6. The method of claim 1 further comprising determining the stage of the grinding operation is the first stage when the measured electrical current increases to an initial state from a residual state.

7. The method of claim 1 further comprising determining the stage of the grinding operation is the second stage when the measured electrical current is at its peak level.

8. The method of claim 7 further comprising determining the stage of the grinding operation is the third stage when the measured electrical current decreases from its peak level.

9. A double side grinder comprising a pair of grinding wheels, a processor, a pair of hydrostatic pads, and flow control valves,

the grinding wheels and hydrostatic pads being operable to hold a generally flat wafer in a plane with a first part of the wafer positioned between the grinding wheels and a second part of the wafer positioned between the hydrostatic pads,

the processor being operable to measure the amount of electrical current used by the grinding wheels,

the hydrostatic pads including water flowing therethrough to maintain a hydrostatic pressure,

the flow control valves operable to controll the water flow rate through the pads and to thereby control the hydrostatic pressure,

the processor including pattern detection software for detecting various stages of a grinding process based on the measured amount of electrical current used by the grinding wheels,

the processor operable to control water flow rate through the flow control valves in response to the stage detected by the pattern detection software.

10. The grinder of claim 9 wherein the processor controls the flow control valves to increase the water flow rate through the valves when the pattern detection software detects a grinding stage of the grinding process.

Assignments (8)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2018
From: SUNEDISON SEMICONDUCTOR LIMITED; MEMC JAPAN LIMITED; MEMC ELECTRONIC MATERIALS S.P.A.
To: GLOBALWAFERS CO., LTD.
Reel/Frame 046327/0001 →
NOTICE OF LICENSE AGREEMENT Recorded Jun 6, 2014
From: SUNEDISON SEMICONDUCTOR LIMITED
To: SUNEDISON SEMICONDUCTOR TECHNOLOGY PTE. LTD.
Reel/Frame 033099/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2014
From: MEMC ELECTRONIC MATERIALS, INC.
To: SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H)
Reel/Frame 033023/0430 →
RELEASE OF SECURITY INTEREST Recorded Mar 3, 2014
From: DEUTSCHE BANK AG NEW YORK BRANCH
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC.
Reel/Frame 032382/0724 →
SECURITY AGREEMENT Recorded Jan 30, 2014
From: SUNEDISON, INC.; SOLAICX; SUN EDISON, LLC; NVT, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 032177/0359 →
RELEASE OF SECURITY INTEREST Recorded Dec 26, 2013
From: GOLDMAN SACHS BANK USA
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0092 →
SECURITY AGREEMENT Recorded Oct 1, 2012
From: NVT, LLC; SUN EDISON LLC; SOLAICX, INC.; MEMC ELECTRONIC MATERIALS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 029057/0810 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 8, 2011
From: BHAGAVAT, SUMEET S.; VANDAMME, ROLAND R.; KOMURA, TOMOMI
To: MEMC ELECTRONIC MATERIALS, INC.
Reel/Frame 026410/0338 →