Method for feeding arsenic dopant into a silicon crystal growing apparatus
View Patent ↗A feed assembly and method of use thereof of the present invention is used for the addition of a high pressure dopant such as arsenic into a silicon melt for CZ growth of semiconductor silicon crystals. The feed assembly includes a vessel-and-valve assembly for holding dopant, and a feed tube assembly, attached to the vessel-and-valve assembly for delivering dopant to a silicon melt. An actuator is connected to the feed tube assembly and a receiving tube for advancing and retracting the feed tube assembly to and from the surface of the silicon melt. A brake assembly is attached to the actuator and the receiving tube for restricting movement of the feed tube assembly and locking the feed tube assembly at a selected position.
1. A method for feeding arsenic dopant to a silicon melt in a silicon crystal growing apparatus having a crystal growing chamber comprising the steps of:
placing granular solid arsenic dopant in a vessel attached to a feed tube, the feed tube comprising a fixed tube and a movable tube in concentric arrangement;
lowering the moveable tube toward the silicon melt with an actuator connected to the moveable tube to selectively position the moveable tube at the upper surface of the silicon melt, the actuator comprising a linear translator magnetically coupled to the moveable tube; and
releasing the dopant from the vessel to allow dopant to travel down the feed tube and into the melt at the upper surface of the melt.
2. A method of claim 1 further comprising the steps of retracting the moveable tube with the actuator and cooling the feed tube by introducing argon gas into the feed tube.
3. A method of claim 2 further comprising the steps of isolating the feed tube from the growing apparatus with an isolation valve.
4. A method of claim 1 wherein a brake assembly attached to the moveable tube holds the moveable tube in a selected position for introducing the dopant material at the upper surface of the silicon melt.
5. A method for feeding arsenic dopant to a silicon melt in a silicon crystal growing apparatus having a crystal growing chamber, comprising the steps of:
placing granular solid arsenic dopant in a vessel attached to a feed tube comprising a fixed tube and a moveable quartz tube having an angled tip, the fixed tube and moveable quartz tube being in concentric arrangement;
lowering the moveable tube toward the silicon melt with an actuator connected to the moveable tube to selectively position the moveable tube at an upper surface of the silicon melt;
releasing the dopant from the vessel to allow the dopant to travel down the feed tube to a catch located in the moveable tube for catching the dopant material when it is released from the vessel; and
introducing argon gas into the feed tube below the vessel causing sublimation of the dopant resulting in dopant laden argon exiting the angled tip of the moveable quartz tube at the upper surface of the silicon melt.
6. A method of claim 5 further comprising the steps of:
retracting the moveable tube with the actuator; and
cooling the feed tube with argon gas.
7. A method of claim 6 further comprising the steps of isolating the feed tube from the growing apparatus with an isolation valve.
8. A method of claim 5 wherein the moveable tube is lowered by a linear translator magnetically coupled to the moveable tube.
9. A method of claim 8 wherein a brake assembly attached to the moveable tube holds the moveable tube in a selected position for introducing the dopant material at the upper surface of the silicon melt.