Granted Patent B2

US 6,913,647 · App. 10/437,141 · Granted Jul 5, 2005

Abstract

Claims (20)

1. A process of producing a single crystal silicon ingot having a seed-cone, and end-cone and a constant diameter portion between the seed-cone and end-cone, the ingot being grown from a silicon melt in accordance with the Czochralski method, the process comprising growing the ingot from the silicon melt such that the ingot comprises a region which is dominated by vacancy-type intrinsic point defects and controlling the temperature of the ingot such that no portion of the ingot cools to a temperature less than a temperature T A at which agglomeration of intrinsic point defects in the ingot occurs during the time the ingot is being grown such that at least the constant diameter portion of the ingot is substantially free of agglomerated intrinsic point defects.

2. A process as set forth in claim 1 wherein the ingot is maintained at temperatures above T A for a period of time selected to permit out diffusion of intrinsic point defects to achieve a concentration below a solubility limit required for agglomeration of intrinsic point defects to occur.

3. A process as set forth in claim 1 wherein the ingot is exposed to an oxidizing atmosphere as the ingot is maintained at a temperature in excess of the temperature T A at which agglomeration of intrinsic point defects in the ingot occurs.

4. A process as set forth in claim 3 wherein the ingot is exposed to at least one cycle as the ingot is maintained at a temperature in excess of the temperature T A at which agglomeration of intrinsic point defects in the ingot occurs wherein in the first phase of the cycle the ingot is exposed to an oxidizing atmosphere and in the second phase of the cycle the ingot is exposed to an atmosphere which dissolves or otherwise removes silicon dioxide from the surface of the ingot.

5. A process of producing a single crystal silicon ingot having a seed-cone, and end-cone and a constant diameter portion between the seed-cone and end-cone, the ingot being grown in a crystal puller from a silicon melt in accordance with the Czochralski method, the crystal puller including a lower growth chamber and an upper pulling chamber, the process comprising:

lowering a seed crystal into contact with the silicon melt located in the growth chamber of the crystal puller;

withdrawing the seed crystal from the melt so as to cause silicon from the melt to freeze for forming the single crystal silicon ingot;

pulling the fully formed ingot into the pulling chamber, wherein the fully formed ingot comprises a region which is dominated by vacancy-type intrinsic point defects;

isolating the pulling chamber from the growth chamber;

maintaining the temperature in the pulling chamber above a temperature T A at which agglomeration of intrinsic point defects in the ingot occurs.

6. A process as set forth in claim 5 wherein the ingot is maintained at temperatures above T A for a period of time selected to permit out diffusion of intrinsic point defects to achieve a concentration below a solubility limit required for agglomeration of intrinsic point defects to occur.

7. A process as set forth in claim 5 wherein the ingot is exposed to an oxidizing atmosphere as the ingot is maintained at a temperature in excess of the temperature T A at which agglomeration of intrinsic point defects in the ingot occurs.

8. A process as set forth in claim 7 wherein the ingot is exposed to at least one cycle as the ingot is maintained at a temperature in excess of the temperature T A at which agglomeration of intrinsic point defects in the ingot occurs wherein in the first phase of the cycle the ingot is exposed to an oxidizing atmosphere and in the second phase of the cycle the ingot is exposed to an atmosphere which dissolves or otherwise removes silicon dioxide from the surface of the ingot.

9. A process for growing a single crystal silicon ingot, the ingot being grown from a silicon melt in accordance with the Czochralski method in a crystal puller comprising a lower growth chamber and an upper pulling chamber, the process comprising:

growing the silicon ingot in the growth chamber such that the ingot comprises a region which is dominated by vacancy-type intrinsic point defects;

cooling a first portion of the ingot to a temperature less than a temperature of agglomeration, T A , while maintaining a second portion of the ingot at a temperature greater than T A during the growth of the ingot, wherein the temperature of agglomeration is the temperature at which the agglomeration of intrinsic point defects occurs;

transferring the grown ingot to the pulling chamber; and,

maintaining a temperature profile in the pulling chamber such that the temperature of the cooled first portion of the ingot does not exceed about 1200° C. and the second portion of the ingot is maintained at a temperature greater than T A for a period of time selected to permit out diffusion of intrinsic point defects to reduce the concentration of intrinsic point defects such that the second portion of the ingot is substantially free of agglomerated intrinsic point defects upon being cooled to a temperature less than T A .

10. A process as set forth in claim 9 wherein the ingot is exposed to an oxidizing atmosphere as the second portion of the ingot is maintained at a temperature in excess of the temperature T A .

11. A process as set forth in claim 10 wherein the ingot is exposed to at least one cycle, as the second portion of the ingot is maintained at a temperature in excess of the temperature T A , wherein in the first phase of the cycle the ingot is exposed to an oxidizing atmosphere and in the second phase of the cycle the ingot is exposed to an atmosphere which dissolves or otherwise removes silicon dioxide from the surface of the ingot.

Assignments (8)