Granted Patent B1

US 7,573,587 · App. 12/197,669 · Granted Aug 11, 2009

Abstract

Claims (22)

1. A method of continuously measuring an elevation and a shape of an unmelted polycrystalline silicon island during a silicon meltdown process, the method comprising:

projecting a focused bright light on the silicon island to produce a bright dot on the silicon island; and

electronically determining an elevation and a shape of the silicon island by tracking the bright dot during the meltdown process.

2. The method of claim 1 wherein said determining step comprises:

capturing and processing a video image of the bright dot on the silicon island during the meltdown process;

electronically determining the location and the elevation of the dot on the silicon island continuously during the meltdown process; and

calculating the elevation and the shape of the silicon island based on the location and the elevation of the dot in response to the movement of the silicon island.

3. The method of claim 2 wherein said steps of electronically determining the location and the elevation of the bright dot and electronically calculating the elevation and the shape of the silicon island are accomplished by computer software.

4. The method of claim 1 wherein said step of electronically determining the elevation and the shape of the silicon island comprises scanning the bright dot with a piezoelectric controlled mirror in a direction to provide 3D measurements of the silicon island.

5. The method of claim 2 wherein said step of capturing and processing the video image of the bright dot on the silicon island further comprises filtering the video image.

6. The method of claim 1 wherein the shape of the island during the meltdown process is controlled by projecting the bright light on the silicon island based on a slope of the island.

7. A system for use in combination with an apparatus for growing a silicon crystal from a silicon melt to measure an elevation and a shape of an unmelted polycrystalline silicon island of the silicon melt during a silicon meltdown process, said apparatus including a chamber having an interior in which the silicon melts, said system for measuring an elevation and a shape of an unmelted polycrystalline silicon island, said system comprising:

a focused bright light source directed into the interior of the chamber for projecting a bright dot onto the silicon island;

a camera directed into the interior of the chamber for generating a continuous image pattern of a portion of the silicon island including the bright dot;

a vision system for capturing the image pattern generated by the camera and processing the image pattern; and

a programmable controller communicating with the vision system and positioned remote from the chamber for determining a location and an elevation of the bright dot and continuously calculating a shape and an elevation of the silicon island therefrom based on the image pattern.

8. The system of claim 7 wherein the light source has an optical output of greater than about 10 mW.

9. The system of claim 8 wherein the light source has a wavelength less than about 600 nm.

10. The system of claim 7 further comprising an optical shield having a wavelength corresponding to that of the light source, the optical shield being installed adjacent the crystal grower for protecting an operator from radiation.

11. The system of claim 7 further comprising a filter for filtering the image pattern of the camera.

12. The system of claim 7 further comprising a scanner attached to the optical shield for scanning the bright dot in one or more dimensions to provide 3D measurements of the silicon island.

13. The system of claim 12 wherein the scanner comprises a piezoelectric controlled mirror.

Assignments (10)