IP Library Patent Application 13432326
Patent Application
App. No. 13/432,326

Systems and Methods For Ultrasonically Cleaving A Bonded Wafer Pair

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Quick Facts
Patent No.
US None
App. No.
13/432,326
Abstract

Systems and methods for the ultrasonic cleaving of bonded wafer pairs are described. The system includes a tank for containing a volume of liquid, a wafer boat having a recess formed therein for receiving the bonded wafer pair. The recess has a pair of opposing, spaced-apart sidewalls disposed at an angle from a vertical axis. An ultrasonic agitator is configured to ultrasonically agitate the volume of liquid. The ultrasonic agitation of the volume of liquid results in the cleaving of the bonded wafer pair.

Claims (23)

1 . A system for ultrasonically cleaving a bonded wafer pair having a first face and a second face, the system comprising:

a tank for containing a volume of liquid;

a wafer boat having at least one recess formed therein for receiving the bonded wafer pair, the recess having a pair of opposing, spaced-apart sidewalls disposed at an angle from a vertical axis;

an ultrasonic agitator configured to ultrasonically agitate the volume of liquid, the ultrasonic agitation of the volume of liquid resulting in the cleaving of the bonded wafer pair.

2 . The system of claim 1 further comprising a second ultrasonic agitator configured to ultrasonically agitate the volume of liquid.

3 . The system of claim 2 wherein the tank includes opposing walls, the first-referenced agitator being attached to one of said walls and the second agitator being attached to the other of said opposing walls.

4 . The system of claim 2 wherein the ultrasonic agitators vibrate at frequencies between about 27 kHz to about 40 kHz.

5 . The system of claim 1 wherein the wafer boat includes a bottom surface between the opposing sidewalls and a ridge disposed on the bottom surface.

6 . The system of claim 5 wherein the bonded wafer pair includes an indentation, the ridge sized to be received within the indentation to facilitate cleaving of the wafer pair.

7 . The system of claim 5 wherein the ridge has an arcuate profile.

8 . The system of claim 5 wherein the wafer boat is configured such that it has a natural frequency that is different than the frequency at which the ultrasonic agitators vibrate.

9 . The system of claim 1 wherein the wafer boat is made at least partially of polytetrafluoroethylene.

10 . A method of ultrasonically cleaving a bonded wafer pair comprising:

positioning the bonded wafer pair in a wafer holder disposed in a tank containing a volume of liquid;

ultrasonically agitating the volume of liquid in the tank with an ultrasonic agitator, wherein the ultrasonic agitation of the volume of liquid cleaves the bonded wafer pair into a handle wafer and a silicon-on-insulator wafer.

11 . The method of claim 10 wherein positioning the bonded wafer pair includes placing the pair in a recess of a wafer boat.

12 . The method of claim 11 wherein the positioning further includes positioning an indentation of the bonded wafer pair over a ridge in the wafer boat.

13 . The method of claim 11 wherein the bonded wafer pair is placed in the tank horizontally on posts.

14 . The method of claim 10 further comprising filling the tank with an ozonated liquid.

15 . The method of claim 10 wherein the ultrasonic agitation includes uniformly vibrating the bonded wafer pair at the same frequency and intensity to cause symmetric separation of the of the wafer pair.

16 . The method of claim 14 wherein the tank is filled such that the entirety of the bonded wafer pair is submerged in the liquid.

17 . The method of claim 10 wherein the ultrasonic agitation is performed by multiple agitators vibrating at frequencies between about 27 kHz to about 40 kHz.

18 . The method of claim 10 wherein the positioning includes positioning a plurality of bonded wafer pairs in the wafer holder.

Assignments (5)
NOTICE OF LICENSE AGREEMENT Recorded Jun 6, 2014
From: SUNEDISON SEMICONDUCTOR LIMITED
To: SUNEDISON SEMICONDUCTOR TECHNOLOGY PTE. LTD.
Reel/Frame 033099/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2014
From: MEMC ELECTRONIC MATERIALS, INC.
To: SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H)
Reel/Frame 033023/0430 →
RELEASE OF SECURITY INTEREST Recorded Mar 3, 2014
From: DEUTSCHE BANK AG NEW YORK BRANCH
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC.
Reel/Frame 032382/0724 →
SECURITY AGREEMENT Recorded Jan 30, 2014
From: SUNEDISON, INC.; SOLAICX; SUN EDISON, LLC; NVT, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 032177/0359 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 28, 2012
From: STEFANESCU, ANCA
To: MEMC ELECTRONIC MATERIALS, INC.
Reel/Frame 027945/0473 →