IP Library Granted Patent US 8,404,049
Granted Patent B2
US 8,404,049 · App. 11/965,521 · Granted Mar 26, 2013

Epitaxial barrel susceptor having improved thickness uniformity

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Quick Facts
Patent No.
US 8,404,049
App. No.
11/965,521
Granted
Mar 26, 2013
Kind
B2
Abstract

A barrel susceptor for supporting semiconductor wafers in a heated chamber having an interior space. Each of the wafers has a front surface, a back surface and a circumferential side. The susceptor includes a body having a plurality of faces arranged around an imaginary central axis of the body. Each face has an outer surface and a recess extending laterally inward into the body from the outer surface. Each recess is surrounded by a rim defining the respective recess. The susceptor also includes a plurality of ledges extending outward from the body. Each of the ledges is positioned in one of the recesses and includes an upward facing support surface for supporting a semiconductor wafer received in the recess. Each of the support surfaces is separate from the outer surface of the respective face.

Claims (9)

1. A barrel susceptor for supporting a plurality of semiconductor wafers in a heated chamber having an interior space, each of said wafers having a front surface, a back surface opposite said front surface and a circumferential side extending around the front surface and the back surface, a wafer thickness measured between the front surface and the back surface, the susceptor being sized and shaped for receipt within the interior space of the chamber and for supporting the plurality of semiconductor wafers, the susceptor comprising:

a body having a plurality of faces arranged around an imaginary central axis of the body, each face having an outer surface with a top recess and a middle recess and one or more lower recesses adjoining and extending laterally inward into the body from the outer surface, each recess being surrounded by a rim, wherein the top recess and the middle recess have differing depths that equal the wafer thickness so that the front surface of the wafer is substantially flush with the surface of the top recess when the wafer is positioned in the middle recess; and

at least one ledge along the middle recess having an upward facing support surface that is separate from the outer surface of the respective face to support the circumferential side of a wafer received in the middle recess.

2. A susceptor as set forth in claim 1 wherein each of said ledges has an outer surface that is flush with the outer surface of the respective face.

3. A susceptor as set forth in claim 1 wherein the supporting surface of each of said ledges has a radius corresponding to the semiconductor wafer supported by the supporting surface.

4. A susceptor as set forth in claim 1 wherein each of said ledges has an arc length no greater than about 120°.

5. A susceptor as set forth in claim 1 wherein each of said ledges has length of about 0.250 inch (6.350 mm).

6. A susceptor as set forth in claim 1 wherein each of said recesses has a depth no greater than about 0.045 inch (1.143 mm).

7. A susceptor as set forth in claim 6 wherein each of said ledges has a height about equal to the depth of the recess.

Assignments (8)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 7, 2018
From: SUNEDISON SEMICONDUCTOR LIMITED; MEMC JAPAN LIMITED; MEMC ELECTRONIC MATERIALS S.P.A.
To: GLOBALWAFERS CO., LTD.
Reel/Frame 046327/0001 →
NOTICE OF LICENSE AGREEMENT Recorded Jun 6, 2014
From: SUNEDISON SEMICONDUCTOR LIMITED
To: SUNEDISON SEMICONDUCTOR TECHNOLOGY PTE. LTD.
Reel/Frame 033099/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 27, 2014
From: MEMC ELECTRONIC MATERIALS, INC.
To: SUNEDISON SEMICONDUCTOR LIMITED (UEN201334164H)
Reel/Frame 033023/0430 →
RELEASE OF SECURITY INTEREST Recorded Mar 3, 2014
From: DEUTSCHE BANK AG NEW YORK BRANCH
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC.
Reel/Frame 032382/0724 →
SECURITY AGREEMENT Recorded Jan 30, 2014
From: SUNEDISON, INC.; SOLAICX; SUN EDISON, LLC; NVT, LLC
To: DEUTSCHE BANK AG NEW YORK BRANCH
Reel/Frame 032177/0359 →
RELEASE OF SECURITY INTEREST Recorded Dec 26, 2013
From: GOLDMAN SACHS BANK USA
To: NVT, LLC; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0092 →
RELEASE OF SECURITY INTEREST Recorded Dec 26, 2013
From: BANK OF AMERICA, N.A.
To: ENFLEX CORPORATION; SUN EDISON LLC; SOLAICX; SUNEDISON, INC. (F/K/A MEMC ELECTRONIC MATERIALS, INC.)
Reel/Frame 031870/0031 →
SECURITY AGREEMENT Recorded Oct 1, 2012
From: NVT, LLC; SUN EDISON LLC; SOLAICX, INC.; MEMC ELECTRONIC MATERIALS, INC.
To: GOLDMAN SACHS BANK USA
Reel/Frame 029057/0810 →