Granted Patent B2

US 7,465,351 · App. 11/155,104 · Granted Dec 16, 2008

Abstract

Claims (20)

1. A method of servicing multiple crystal forming apparatus with a single melter assembly, the method comprising the steps of:

positioning the melter assembly above a first crystal forming apparatus for delivering molten silicon to a crucible of the first apparatus;

operating a heater in the melter assembly to melt source material in a melting crucible of the melter assembly;

delivering a stream of molten source material from the melter assembly to the first crystal forming apparatus;

moving the melter assembly to a position above a second crystal forming apparatus for delivering molten silicon to a crucible of the second apparatus;

delivering a stream of molten source material from the melter assembly to the second crystal forming apparatus.

2. A method as set forth in claim 1 wherein operating a heater in the melter assembly to melt source material comprises providing electrical power to an upper induction coil of the heater.

3. A method as set forth in claim 1 wherein delivering a stream of molten source material comprises providing electrical power to a lower induction coil of the heater to initiate flow through an orifice of the melter assembly.

4. A method as set forth in claim 1 further comprising discontinuing the flow of molten source material from the melting crucible by discontinuing the operation of the heater.

5. A method as set forth in claim 4 wherein the step of discontinuing the flow of molten source material comprises forming a solid plug of source material preventing flow from the melting crucible.

6. A method as set forth in claim 1 further comprising growing a monocrystalline ingot from the source material delivered to at least one of said first crystal forming apparatus and said second crystal forming apparatus.

7. A method as set forth in claim 1 further comprising forming a polycrystalline body from the source material delivered to at least one of said first crystal forming apparatus and said second crystal forming apparatus.

8. A method as set forth in claim 7 wherein said polycrystalline body comprises a hollow polygonal silicon body formed by an Edge-defined Film Growth method.

9. A method as set forth in claim 7 wherein said polycrystalline body comprises a ribbon of polycrystalline silicon.

10. A method as set forth in claim 7 wherein said polycrystalline body comprises a cast silicon body.

11. A method as set forth in claim 1 wherein said moving the melter assembly to a position above the second crystal forming apparatus comprises lifting the melter assembly.

12. A method as set forth in claim 1 further comprising connecting the melter assembly to a lower housing of the second crystal forming apparatus prior to delivering a stream of molten source material to the second crystal forming apparatus.

13. A method as set forth in claim 1 wherein operation of an upper induction coil to melt source material in the melting crucible further comprises forming an unmelted plug of solid source material in the nozzle at the bottom of the melting crucible.

14. A method as set forth in claim 1 wherein delivering the stream of molten source material to the first crystal forming apparatus comprises delivering the stream of molten source material to the first crystal forming apparatus at a flow rate of between about 50 kg/hr and about 140 kg/hr.

15. A method as set forth in claim 1 wherein delivering the stream of molten source material to the second crystal forming apparatus comprises delivering the stream of molten source material to the second crystal forming apparatus at a flow rate of between about 50 kg/hr and about 140 kg/hr.

Assignments (11)