IP Library › Granted Patent US 6,562,123
Granted Patent Utility
US 6,562,123 · App. 10/035,540

Process for growing defect-free silicon wherein the grown silicon is cooled in a separate chamber

Inventors: Robert J. Falster, Harold W. Korb
Patented Case View Patent ↗
Granted: May 13, 2003 Filed: Oct 23, 2001
Inventors
Robert J. Falster
Harold W. Korb
Assignee (at issue)
MEMC Electronic Materials, Inc.

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Quick Facts
Patent No.
US 6,562,123
App. No.
10/035,540
Filed
2001-10-23
Granted
2003-05-13
Kind
B2