Polishing slurry composition and method of using the same
View Patent ↗A polishing slurry composition including an abrasive, a pH-adjusting agent, a water-soluble thickening agent, and a chelating agent, wherein the chelating agent includes at least one of an acetate chelating agent and a phosphate chelating agent, and a method of using the same.
1. A polishing slurry composition for final polishing a silicon wafer, the composition comprising:
an abrasive;
a pH-adjusting agent;
a water-soluble thickening agent; and
a chelating agent, wherein:
the chelating agent includes at least one acetate chelating agent and at least one phosphate chelating agent,
the polishing slurry composition has an alkaline pH,
the acetate chelating agent is selected from the group consisting of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, N-(hydroxyethyl)ethylenediaminetriacetic acid, nitrilotriacetic acid, and salts thereof, and
the phosphate chelating agent is selected from the group consisting of sodium salts of ethylenediaminetetra(methylene phosphonic acid), ammonium salts of ethylenediaminetetra(methylene phosphonic acid), amino tri(methylene phosphonic acid), and diethylenetriaminepenta(methylene phosphonic acid).
2. The polishing slurry composition as claimed in claim 1 , wherein the chelating agent includes two different acetate chelating agents, each of which is selected from the group consisting of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, N-(hydroxyethyl)ethylenediaminetriacetic acid, nitrilotriacetic acid, and salts thereof.
3. The polishing slurry composition as claimed in claim 1 , wherein
the at least one acetate chelating agent is present at a concentration of between about 0.001 and 0.5 percent by weight, based on the total weight of the slurry composition.
4. The polishing slurry composition as claimed in claim 1 , wherein
the at least one phosphate chelating agent is present at a concentration of between about 0.0002 and 5 percent by weight, based on the total weight of the slurry composition.
5. The polishing slurry composition as claimed in claim 1 , wherein the acetate chelating agent is present at a concentration of between about 0.001 and 0.5 percent by weight, based on the total weight of the slurry composition, and
the at least one phosphate chelating agent is present at a concentration of between about 0.0002 and 5 percent by weight, based on the total weight of the slurry composition.
6. The polishing slurry composition as claimed in claim 1 , wherein the ratio of the at least one phosphate chelating agent to the at least one acetate chelating agent is in the range of between about 0.2:1 and 10:1.
7. The polishing slurry composition as claimed in claim 1 , wherein the at least one acetate chelating agent is selected from the group consisting of EDTA, Na 4 EDTA, Na 2 EDTA, (NH 4 ) 4 EDTA, and (NH 4 ) 2 EDTA, and
the at least one phosphate chelating agent is selected from the group consisting of sodium salts of ethylenediamine tetra(methylene phosphonic acid), and ammonium salts of ethylenediaminetetra(methylene phosphonic acid).
8. The polishing slurry composition as claimed in claim 1 , wherein the abrasive includes colloidal silica having an average particle diameter of about 20-100 nm.
9. The polishing slurry composition as claimed in claim 1 , wherein the water-soluble thickening agent is water-soluble cellulose having a weight average molecular weight of between about 1,000,000 and 4,000,000.
10. The polishing slurry composition as claimed in claim 8 , wherein the colloidal silica has an average particle diameter of about 30-80 nm.
11. The polishing slurry composition as claimed in claim 1 , wherein the pH ranges from about 9 to about 11.5.
12. The polishing slurry composition as claimed in claim 8 , wherein the water-soluble thickening agent includes a cellulose.
13. A polishing slurry composition for a final process in the production of silicon wafers, the composition comprising:
an abrasive;
a pH-adjusting agent;
a water-soluble thickening agent; and
a chelating agent, wherein:
the chelating agent includes at least one acetate chelating agent and at least one phosphate chelating agent,
the polishing slurry composition has an alkaline pH,
the acetate chelating agent is selected from the group consisting of ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, N-(hydroxyethyl)ethylenediaminetriacetic acid, nitrilotriacetic acid, and salts thereof, and
the phosphate chelating agent is selected from the group consisting of sodium salts of ethylenediaminetetra(methylene phosphonic acid), ammonium salts of ethylenediaminetetra(methylene phosphonic acid), amino tri(methylene phosphonic acid), and diethylenetriaminepenta(methylene phosphonic acid).