SUPPORT FOR A SEMICONDUCTOR WAFER IN A HIGH TEMPERATURE ENVIRONMENT
A wafer support for supporting a semiconductor wafer during a process including varied temperature. The wafer support includes a body having a top surface adapted to receive the semiconductor wafer so a portion of the top surface supports the wafer. The top surface has a recessed area including an inclined surface rising from a bottom of the recessed area. The inclined surface has an incline angle that is no more than about ten degrees.
1 . A wafer support for supporting a semiconductor wafer during a process including varied temperature, the wafer support comprising a body having a top surface adapted to receive the semiconductor wafer so a portion of the top surface supports the wafer, said top surface having a recessed area including an inclined surface rising from a bottom of the recessed area, the inclined surface having an incline angle that is no more than about ten degrees.
2 . A wafer supper as set forth in claim 1 wherein the inclined surface forms at least a portion of an outer margin of the recessed area.
3 . A wafer supper as set forth in claim 2 wherein the inclined surface having an incline angle that is no more than about five degrees.
4 . A wafer supper as set forth in claim 3 wherein the inclined surface having an incline angle that is no more than about 2.5 degrees.
5 . A wafer supper as set forth in claim 4 wherein the inclined surface having an incline angle that is no more than about one degree.
6 . A wafer supper as set forth in claim 1 wherein the inclined surface forms at least a portion of an inner margin of the recessed area.
7 . A wafer supper as set forth in claim 6 wherein the inclined surface having an incline angle that is no more than about five degrees.
8 . A wafer supper as set forth in claim 7 wherein the inclined surface having an incline angle that is no more than about 2.5 degrees.
9 . A wafer support as set forth in claim 1 wherein the upper surface includes a rounded ridge at least a portion of which forms a margin of the recessed area.
10 . A wafer support as set forth in claim 9 wherein the rounded ridge forms an inner margin of the recessed area.
11 . A wafer support as set forth in claim 10 wherein the rounded ridge has a surface roughness of less than about 2 μm Ra.
12 . A wafer support as set forth in claim 10 wherein the rounded ridge is substantially continuous around an inner margin of the recessed area.
13 . A wafer support as set forth in claim 10 wherein the rounded ridge has a height of no more than about 0.2 mm above a bottom of the recessed area.
14 . A wafer support as set forth in claim 1 wherein an outer edge of the top surface has a height of no more than about 0.2 mm above a bottom of the recessed area.
15 . A wafer support as set forth in claim 1 wherein the recessed portion has a substantially uniform width.
16 . A wafer support as set forth in claim 1 wherein the body comprises a material that retains stiffness sufficient to support the wafer at a temperature of at least about 1050 degrees centigrade.
17 . A wafer support as set forth in claim 15 wherein the body comprises silicon carbide.
18 . A wafer support as set forth in claim 1 wherein the recessed area comprises an arcuate groove.
19 . A wafer support for supporting a semiconductor wafer in a heat treatment process, the wafer support comprising a body having a top surface adapted to engage the semiconductor wafer with at least a portion of said top surface supporting the wafer, said top surface having an outer edge and a recessed area having a inner limit and an outer limit, the inner and outer limits being substantially free from broken edges inside of the outer edge of the top surface.
20 . A wafer support for supporting a semiconductor wafer during a process including varied temperature, the wafer support comprising a body having a top surface adapted to receive the semiconductor wafer so a portion of the top surface supports the wafer, said top surface having a recessed area including an inclined outer margin rising from a bottom of the recessed area, the inclined outer margin having an incline angle that is no more than about five degrees.
21 . A wafer support for supporting a semiconductor wafer during a process including varied temperature, the wafer support comprising a body having a top surface adapted to receive the semiconductor wafer so a portion of the top surface supports the wafer, said top surface having a recessed area and a rounded ridge extending around the body inside the recessed area, the recessed area including an inner margin formed by at least a portion of the rounded ridge, said inner margin having a maximum incline angle that is no more than about ten degrees.
22 . A wafer support for supporting a semiconductor wafer during a process including varied temperature, the wafer support comprising a body having a top surface adapted to receive the semiconductor wafer so a portion of the top surface supports the wafer, said top surface having a constant slope between a higher outer edge and a lower inner edge.
23 . A wafer support for supporting a semiconductor wafer during a process including varied temperature, the wafer support comprising a body having a top surface adapted to receive the semiconductor wafer so a portion of the top surface supports the wafer, said top surface having a slope at a higher outer edge and a substantially equal slope at a lower inner edge.