Methods for pulling a multicrystalline silicon ingot from a silicon melt
View Patent ↗Methods for producing muticrystalline silicon ingots by use of a Czochralski-type crystal puller and pulling assemblies that include a plurality of seed crystals for pulling multicrystalline silicon ingots.
1. A method for growing a silicon ingot in an ingot puller, the method comprising
loading polycrystalline silicon into a crucible to form a silicon charge;
heating the silicon charge to a temperature above about the melting temperature of the charge to form a silicon melt;
bringing a plurality of seed crystals into contact with the silicon melt, the seed crystals being attached to a mounting bracket; and
pulling a silicon ingot up from the silicon melt, the seed crystals being attached to the mounting bracket at a joint to allow for lateral movement of the seed crystals as the silicon ingot is withdrawn from the silicon melt and cools.
2. A method as set forth in claim 1 wherein growth conditions of the ingot are controlled to produce a multicrystalline silicon ingot.
3. A method as set forth in claim 1 wherein at least 4 seed crystals are brought into contact with the silicon melt.
4. A method as set forth in claim 1 wherein at least about 10 seed crystals are brought into contact with the silicon melt.
5. A method as set forth in claim 1 wherein the seed crystals are connected to a chuck constructed for holding the seed crystals and the ingot grown on the seed crystals from the silicon melt.
6. A method as set forth in claim 5 wherein the mounting bracket is connected to the chuck.
7. A method as set forth in claim 6 wherein the mounting bracket is attached to a suspension rod that is attached to the chuck.
8. A method as set forth in claim 5 wherein the number of seed crystals contacted with the silicon melt is at least about 1 seed crystal per 400 cm 2 of ingot cross sectional area.
9. A method as set forth in claim 5 wherein the number of seed crystals contacted with the silicon melt is at least 10 seed crystals per 100 cm 2 of ingot cross sectional area.
10. A method as set forth in claim 1 wherein the seed crystals are arranged in a circular pattern.
11. A method as set forth in claim 1 wherein the growth conditions of the ingot are controlled to produce a multicrystalline silicon ingot with an average nominal crystal size of from about 5 mm to about 25 mm.
12. A method as set forth in claim 1 wherein the seed crystals are attached to the mounting bracket by a ball and socket joint to allow for lateral movement of the seed crystals as the silicon ingot is withdrawn from the silicon melt and cools.
13. A method as set forth in claim 1 wherein the mounting bracket has at least two legs and frets connected to the legs, the seed crystals having openings that allow the seed crystals to be mounted on the legs and between the frets to allow for lateral movement of the seed crystals as the silicon ingot is withdrawn from the silicon melt and cools.
14. A method as set forth in claim 1 wherein the mounting bracket has a plurality of grooves.
15. A method as set forth in claim 14 wherein each seed crystal has an opening and a tapered portion that tapers to form a ridge in the opening, the ridge being seated in a groove of the mounting bracket to allow for lateral movement of the seed crystal as the silicon ingot is withdrawn from the silicon melt and cools.