System for continuous growing of monocrystalline silicon
View Patent ↗An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.
1. An improved CZ system for growing a single crystal ingot from a molten crystalline material comprising:
a fixed low aspect ratio, wide diameter crucible including a base and side walls for holding a quantity of molten material at a melt/crystal interface with respect to a seed crystal for growing an ingot from the molten material;
a pre melter for providing a substantially continuous source of molten material to the crucible, such that the melt/crystal interface is maintained at a desired level without vertical travel of the crucible;
annular heating means comprising separately controllable heater elements provided adjacent the base of the crucible at a fixed distance therefrom, each heating element for transferring a desired amount of thermal energy to an adjacent portion of the crucible for providing a controllable thermal distribution across the crucible and at the crystal/melt interface for optimal crystal growth.
2. An improved CZ system as in claim 1 wherein the annular heating means comprise a plurality of separately controlled resistive heaters disposed in a radial pattern to establish corresponding thermal zones, each thermal zone controlled by thermal output of a respective resistive heater such that an optimal thermal distribution is established the crucible.
3. An improved CZ system as in claim 2 , further comprising one or more individually controlled side wall heaters and one or more sensors for monitoring temperature of each thermal zone and for producing signals representative of sensed temperature;
control means responsive to the sensor signals for activating each side wall heater and annular heating means such that an optimal thermal distribution is established across the melt and at the crystal/melt interface.
4. An improved CZ system as in claim 1 comprising means for adding dopant as needed to the pre melter during crystal growth to provide compensation for segregation and establish a substantially uniform dopant concentration in the grown crystal.
5. An improved CZ grower as in claim 1 further comprising a plurality of crystal pull chambers sequentially disposed with respect to the crucible, each pull chamber including means for positioning a seed crystal at the melt/crystal interface and for pulling the growing ingot, such that upon completion of growth of a first ingot, a first pull chamber moves the first ingot away from the crucible for cooling, and a successive pull chamber moves to position a new crystal at the crystal/melt interface in the crucible.
6. An improved CZ system according to claim 1 wherein the low aspect ratio (diameter with respect to height) of the crucible is in a range of 4:1 to 10:1 and preferably about 8:1.
7. A system for continuous growth of a single crystal ingot as in claim 1 further comprising a means for adding amounts of dopant material to the pre melter, such that dopant concentration throughout the ingot is substantially uniform.
8. A system for continuous growth of a single crystal ingot comprising:
a low aspect ratio, large diameter crucible including a base for holding a melt of crystalline material;
a pre-melter having an inlet for receiving a supply of crystalline material, a means for melting the material, and an outlet communicating with the crucible for replenishing the melt as it is taken up by the growing crystal, such that the melt in the crucible is maintained at a desired level with respect to the crystal, without vertical travel of the crucible;
multiple crystal pull chambers sequentially disposed with respect to the crucible such that upon growth of a first ingot, a first pull chamber moves the first ingot out of the crucible for cooling, and a successive pull chamber moves to position a new crystal in the crucible;
individually controllable heating means disposed adjacent to the base of the crucible for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth.
9. A system for continuous growth of a single crystal ingot as in claim 8 further comprising a means for adding precise amounts of dopant material as needed to the pre melter such that an axial, (lengthwise), electrical conductivity of the ingot is substantially uniform.
10. A system for continuous growth of a single crystal ingot as in claim 8 further comprising a weir disposed in the melt between the crystal/melt interface and outlet port of the pre melter; the weir including a top surface extending above the melt to block formation of ripples or thermal perturbations in the melt as molten material from the pre-melter is distributed into the melt.
11. An improved CZ system for growing a single crystal ingot from a molten crystalline material comprising:
a fixed low aspect ratio, wide diameter crucible for holding a quantity of molten material at a melt/crystal interface with respect to a seed crystal for growing an ingot from the molten material without vertical travel of the crucible;
a pre melter for receiving a source of solid crystalline material and dopant material and providing a continuous source of molten doped material to the crucible;
individually controllable heating means disposed around the sides and adjacent to the base of the crucible at a fixed distance therefrom for providing corresponding controllable heating zones across the crucible and at the crystal/melt interface for improved crystal growth.
12. An improved CZ system for growing an ingot from a seed crystal positioned at a growth interface in a crucible including a pre melter for melting solid crystalline feedstock received from a source and for providing an output of molten material to the crucible, comprising;
a load cell means mechanically coupled with the crucible for sensing the weight of the melt in the crucible and for producing output signals representative of the sensed weight;
a level controller comprising a microprocessor responsive to signals from the load cell and for determining output of the pre melter based on a desired depth D of melt in the growth crucible;
a flow control means, communicatively linked with the level controller and disposed between the source of solid feedstock and the pre melter for truncating or dispensing feedstock from the source to the pre melter in response to a signal from the level controller such that the output of the pre melter maintains the level of melt in the crucible at a predetermined depth for optimal crystal growth.
13. An improved CZ system as in claim 1 further comprising a weir disposed around the crystal melt interface such that the pre melter provides the continuous source of molten material to the crucible without perturbation of the melt and the crystal/melt interface.
14. An improved CZ system as in claim 1 or 7 further comprising:
a low aspect ratio, wide diameter crucible having interior surfaces for containing the molten material coated with a material selected from the group consisting of: alpha or beta sintered silicon carbide, tantalum nitride, or similar ceramic.
15. An improved CZ system as in claim 1 or 7 further comprising:
a low aspect ratio, wide diameter crucible comprising a material selected from the group consisting of: alpha or beta sintered silicon carbide, tantalum nitride, or similar ceramic.
16. An apparatus for substantially uniform melting of crystalline feedstock including solid granules characterized by a diameter on the order of 1 mm or less in a crucible comprising:
a fixed low aspect ratio, wide diameter crucible for holding the molten crystalline feedstock without vertical travel;
a plurality of independently controllable heaters provided beneath the base of the crucible at a fixed distance therefrom, such that a maximized surface area of contact and minimized thermal path exists between the granules and the independently controllable heaters beneath the low aspect ratio crucible; and
means for applying power to thermally activate each heater to achieve an optimal temperature distribution such that the thermal zones drive heat uniformly into the granules at a desired rate.
17. An apparatus according to claim 16 further comprising:
control means for monitoring power consumption of each heater needed to achieve the optimal temperature distribution and for applying power to thermally activate each heater in accordance with the monitored power consumption to achieve a repeatable state wherein granules melt uniformly at a desired rate.
18. An apparatus according to claim 16 wherein the low aspect ratio, diameter with respect to height, of the crucible is in a range of 4:1 to 10:1 and preferably about 8:1.
19. An apparatus for substantially uniform melting of silicon or polysilicon crystalline material including solid granules down to a diameter on the order of 1 mm or less in a crucible comprising:
a fixed, low aspect ratio, wide diameter crucible for holding the silicon or polysilicon melt without vertical travel;
a plurality of independently controllable heaters disposed beneath the crucible at a fixed distance therefrom for establishing corresponding thermal zones through the melt, such that a maximized surface area of contact and minimized thermal path exists between granules in the melt and the independently controllable heaters beneath the low aspect ratio crucible;
means for thermally activating each heater to achieve an optimal thermal distribution across the melt such that granules are melted uniformly at a desired rate; and
control means for selectively controlling thermal activation of each heater by monitoring power consumed by each heater to achieve the optimal thermal distribution across the melt.
20. An apparatus according to claim 18 wherein the low aspect ratio (diameter with respect to height) of the crucible is in a range of 4:1 to 10:1; and most preferably in a range of about 8:1.
21. An improved CZ system for growing one or more single crystal silicon ingots from a molten silicon material comprising:
a fixed low aspect ratio, wide diameter crucible including a base and side walls for holding a quantity of molten silicon at a melt/crystal interface with respect to a seed crystal for growing the ingot from the molten material;
a pre melter for providing a continuous source of molten silicon feedstock to the crucible, such that the melt/crystal interface is maintained at a desired level without vertical travel of the crucible;
a plurality of growth chambers rotatably disposed with respect to the crucible for pulling the seed crystal to form an ingot, such that the same crucible is recharged by the pre melter for each growth chamber;
annular heating means disposed beneath the base of the crucible at a fixed distance therefrom for providing a uniform thermal distribution across the crucible and at the crystal/melt interface for optimal crystal growth.
22. An improved CZ system as in claim 21 wherein the annular heating means comprise a plurality of separately controlled resistive heaters disposed in a radial pattern to establish corresponding thermal zones across crucible, each thermal zone controlled by thermal output of a respective resistive heater such that an optimal thermal distribution is established across the crucible and at the crystal/melt interface.
23. An improved CZ system as in claim 21 wherein the fixed distance from the crucible is in a range of ¼ inch to about 12 inches and preferably from ¼ inch to about 3 inches.