Processes for purification of silicon tetrafluoride
View Patent ↗Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts.
1. A process for producing a purified silicon tetrafluoride gas, the process comprising:
contacting a silicon tetrafluoride source gas comprising silicon tetrafluoride and carbon monoxide with a catalyst comprising an inert substrate having a surface and a catalytic metal oxide at or near the surface, the catalytic metal oxide comprising a catalytic metal selected from the group consisting of copper, manganese, chromium, cobalt, thallium, molybdenum, silver and mixtures thereof; and
adsorbing at least a portion of the carbon monoxide onto the surface of the catalyst by reacting the carbon monoxide with the catalytic metal oxide to form one or more metal carbonyl complexes adhered to the catalyst, thereby producing a purified silicon tetrafluoride gas stream having a reduced concentration of carbon monoxide.
2. A process as set forth in claim 1 wherein the catalytic metal oxide comprises copper, manganese or mixtures thereof.
3. A process as set forth in claim 1 wherein the inert substrate is selected from the group consisting of zirconia, alumina silicate, silica, alumina, yttria and mixtures thereof.
4. A process as set forth in claim 3 wherein the inert substrate comprises zirconia, alumina silicate or mixtures thereof.
5. A process as set forth in claim 1 wherein the inert substrate comprises a metal oxide stabilizer comprising a metal selected from the group consisting of lanthanides, actinides, magnesium, yttrium, calcium and mixtures thereof.
6. A process as set forth in claim 5 wherein the inert substrate comprises less than about 0.1% by weight stabilizer.
7. A process as set forth in claim 1 wherein the inert substrate comprises yttrium oxide as a stabilizer.
8. A process as set forth in claim 1 wherein the silicon tetrafluoride source gas comprises from about 0.001% to about 3.0% by volume carbon monoxide.
9. A process as set forth in claim 1 wherein the catalyst comprises from about 0.001% to about 1.0% by weight catalytic metal.
10. A process as set forth in claim 1 wherein the catalyst comprises about 95% to about 99.999% by weight inert substrate.
11. A process as set forth in claim 1 wherein the inert substrate has a surface area from about 1 m 2 /g to about 1000 m 2 /g.
12. A process as set forth in claim 1 wherein the inert substrate has a bulk porosity of from about 30% to about 80%.
13. A process as set forth in claim 1 wherein the inert substrate has a micro-porosity of from about 1% to about 20%.
14. A process as set forth in claim 1 wherein at least about 97% of the carbon monoxide in the silicon tetrafluoride source gas is removed.
15. A process as set forth in claim 1 wherein the silicon tetrafluoride source gas comprises acidic compounds selected from the group consisting of hydrogen fluoride, hydrochloric acid, sulfur dioxide, sulfur trioxide, hydrogen sulfide, and mixtures thereof and wherein a portion of the silicon tetrafluoride source gas is contacted with an ion exchange resin to produce a purified silicon tetrafluoride gas stream having a reduced concentration of acidic compounds.
16. A process as set forth in claim 15 wherein the silicon tetrafluoride source gas is contacted with the ion exchange resin to remove a portion of the acidic compounds prior to contacting the silicon tetrafluoride source gas with the catalyst.
17. A process as set forth in claim 1 wherein the silicon tetrafluoride source gas comprises inert compounds and wherein:
the silicon tetrafluoride source gas is cooled to a cryogenic temperature; and
the cooled silicon tetrafluoride source gas is fed to a distillation column to produce a purified silicon tetrafluoride gas stream having a reduced concentration of inert compounds.
18. A process as set forth in claim 17 wherein the silicon tetrafluoride source gas is cooled to a cryogenic temperature and fed to a distillation column subsequent to contacting the silicon tetrafluoride source gas with the catalyst.
19. A process as set forth in claim 1 wherein the silicon tetrafluoride source gas comprises carbon dioxide and a portion of the carbon dioxide is removed by contacting the silicon tetrafluoride gas by an absorption liquid comprising at least one glycol diether.
20. A process as set forth in claim 1 wherein the catalyst is regenerated by heating the catalyst and the metal carbonyl complexes adhered thereto to a temperature of from about 500° C. to about 570° C. to decompose the metal carbonyl complexes and form carbon oxides, the carbon oxides being released from the catalyst.
21. A process as set forth in claim 1 wherein the silicon tetrafluoride source gas is contacted with the catalyst at a temperature of from about −30° C. to about 90° C.
22. A process as set forth in claim 1 wherein the silicon tetrafluoride source gas is contacted with the catalyst at a linear velocity of from about 1 cm/sec to about 200 cm/sec.
23. A process as set forth in claim 1 wherein the catalyst is regenerated by heating the catalyst and the metal carbonyl complexes adhered thereto to a temperature of at least about 500° C. to decompose the metal carbonyl complexes and form carbon oxides, the carbon oxides being released from the catalyst.
24. A process as set forth in claim 1 wherein the catalyst is regenerated by heating the catalyst and the metal carbonyl complexes adhered thereto to a temperature of at least about 700° C. to decompose the metal carbonyl complexes and form carbon oxides, the carbon oxides being released.